KR960001845A - Manufacturing method of optical path control device - Google Patents

Manufacturing method of optical path control device Download PDF

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KR960001845A
KR960001845A KR1019940015345A KR19940015345A KR960001845A KR 960001845 A KR960001845 A KR 960001845A KR 1019940015345 A KR1019940015345 A KR 1019940015345A KR 19940015345 A KR19940015345 A KR 19940015345A KR 960001845 A KR960001845 A KR 960001845A
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South Korea
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forming
film
membrane
sacrificial
support
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KR1019940015345A
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Korean (ko)
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KR0178192B1 (en
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김유광
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배순훈
대우전자 주식회사
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G02B26/0858—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting means being moved or deformed by piezoelectric means
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/0102—Constructional details, not otherwise provided for in this subclass
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/02—Function characteristic reflective

Abstract

본 발명은 광로조절장치의 제조방법에 관한 것으로 트랜지스터들이 매트릭스 상태로 형성되고 표면에 상기 트랜지스터들과 전기적으로 연결된 패드들이 형성된 제1도전형의 반도체 웨이퍼로 이루어진 구동기판의 상부에 제2도전형의 불순물이 고농도로 도핑된 희생막을 형성하는 공정과, 상기 패드들이 노출되도록 희생막의 소정부분을 제거하고 지지부을 형성하는 공정과, 상기 희생막과 상기 지지부의 상부에 멤브레인을 형성하는 공정과, 상기 멤브레인과 지지부의 소정부분을 패드가 노출되도록 제거하고 플러그를 형성하는 공정과, 상기 멤브레인 상부에 상기 플러그와 전기적으로 연결되도록 신호전극을 형성하는 공정과, 상기 신호전극의 상부에 변형부를 형성하는 공정과, 상기 변형부의 상부에 반사막을 형성하는 공정과, 상기 반사막으로 부터 상기 멤브레인까지 상기 희생막이 노출되게 일측단이 상기 지지부의 일측단과 일치되도록 제거하여 화소를 분리하는 공정과, 상기 반사막 상부와 화소 분리에 의해 노출되는 측면에 보호막을 형성하는 공정과, 상기 희생막에 도핑된 제2도전형의 불순물을 제거하여 다공질화하는 공정과, 상기 보호막과 상기 희생막을 제거하는 공정을 구비한다. 따라서, 희생막 제거공정에서 희생막을 짧은 시간에 제거할 수 있고 희생막 제거시 멤브레인까지 손상되는 것을 최소화시킨다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an optical path control apparatus, wherein a transistor is formed in a matrix state and a second conductive type is formed on a driving substrate formed of a first conductive semiconductor wafer having pads electrically connected to the transistors. Forming a sacrificial film doped with a high concentration of impurities, removing a predetermined portion of the sacrificial film so as to expose the pads, and forming a support part; forming a membrane on the sacrificial film and the support part; Removing a predetermined portion of the support portion to expose the pad and forming a plug, forming a signal electrode on the membrane to be electrically connected to the plug, forming a deformation portion on the signal electrode, Forming a reflective film on the deformable portion; Separating the pixels by removing one end of the support layer from the one end of the support unit to expose the sacrificial layer to the membrane; forming a protective film on the upper side of the reflective film and the side exposed by the pixel separation; And removing the protective film and the sacrificial film by removing the impurities of the second conductivity type doped into the porous material. Therefore, the sacrificial film can be removed in a short time in the sacrificial film removing process and the damage to the membrane is minimized when the sacrificial film is removed.

Description

광로조절장치의 제조방법Manufacturing method of optical path control device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도(a) 내지 (c)는 종래의 광로조절장치의 제조공정도.1 (a) to (c) is a manufacturing process diagram of a conventional optical path control device.

제2도(a) 내지 (d)는 본 발명의 실시예에 따라 광로조절장치의 제조공정도.2 (a) to (d) is a manufacturing process diagram of the optical path control apparatus according to an embodiment of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

31 : 구동기판 33 : 희생막31: driving substrate 33: sacrificial film

35 : 패드 37 : 플러그35: pad 37: plug

39 : 지지부 41 : 멤브레인39: support portion 41: membrane

43 : 신호전극 45 : 변형부43: signal electrode 45: deformation part

47 : 반사막 48 : 보호막47: reflective film 48: protective film

49 : 전원 50 : 액츄에이터49: power supply 50: actuator

Claims (23)

트랜지스터들이 매트릭스 상태로 형성되고 표면에 상기 트랜지스터들과 전기적으로 연결된 패드들이 형성된 제1도전형의 반도체 웨이퍼로 이루어진 구동기판의 상부에 제2도전형의 불순물이 고농도로 도핑된 희생막을 형성하는 공정과, 상기 패드들이 노출되도록 희생막의 소정부분을 제거하고 지지부을 형성하는 공정과, 상기 희생막과 상기 지지부의 상부에 멤브레인을 형성하는 공정과, 상기 멤브레인과 지지부의 소정부분을 패드가 노출되도록 제거하고 플러그를 형성하는 공정과, 상기 멤브레인 상부에 상기 플러그와 전기적으로 연결되도록 신호전극을 형성하는 공정과, 상기 신호전극의 상부에 변형부를 형성하는 공정과, 상기 변형부의 상부에 반사막을 형성하는 공정과, 상기 반사막으로 부터 상기 멤브레인까지 상기 희생막이 노출되게 일측단이 상기 지지부의 일측단과 일치되도록 제거하여 화소를 분리하는 공정과, 상기 반사막 상부와 화소 분리에 의해 노출되는 측면에 보호막을 형성하는 공정과, 상기 희생막에 도핑된 제2도전형의 불순물을 제거하여 다공질화하는 공정과, 상기 보호막과 상기 희생막을 제거하는 공정을 구비하는 광로조절장치 제조방법.Forming a sacrificial film doped with a high concentration of impurities of a second conductive type on top of a driving substrate formed of a first conductive semiconductor wafer having transistors formed in a matrix state and pads electrically connected to the transistors on a surface thereof; Removing a predetermined portion of the sacrificial layer and forming a support to expose the pads; forming a membrane on the sacrificial layer and the support; removing a predetermined portion of the membrane and the support so that the pad is exposed and a plug. Forming a signal electrode so as to be electrically connected to the plug on the membrane, forming a deformation portion on the signal electrode, and forming a reflective film on the deformation portion; To expose the sacrificial layer from the reflective layer to the membrane Separating the pixels by removing the ends of the support parts so as to coincide with one end of the support part, forming a passivation layer on the upper surface of the reflective film and the side surface exposed by the pixel separation, and removing impurities of the second conductivity type doped into the sacrificial layer. And removing the porous film and removing the protective film and the sacrificial film. 제1항에 있어서, 상기 제1도전형이 N형으로 형성되고 제2도전형이 P형인 광로조절장치의 제조방법.The method of manufacturing an optical path control device according to claim 1, wherein the first conductive type is N-type and the second conductive type is P-type. 제2항에 있어서, 상기 희생막을 붕소(B), 알루미늄(Al), 갈륨(Ga), 또는 인듐(In) 등의 불순물로 도핑하는 광로조절장치의 제조방법.The method of claim 2, wherein the sacrificial layer is doped with impurities such as boron (B), aluminum (Al), gallium (Ga), or indium (In). 제3항에 있어서, 상기 희생막을 화학기상침적법으로 형성하는 광로조절장치의 제조방법.The method of claim 3, wherein the sacrificial layer is formed by chemical vapor deposition. 제1항에 있어서, 상기 지지부를 질화실리콘(Si3N4), 산화실리콘(SiO2), 또는 탄화실리콘으로 형성하는 광로조절장치의 제조방법.The method of claim 1, wherein the support part is formed of silicon nitride (Si 3 N 4 ), silicon oxide (SiO 2 ), or silicon carbide. 제5항에 있어서, 상기 지지부를 스퍼터링 또는 화학기상침적법으로 1∼2㎛ 두께로 형성하는 광로조절장치의 제조방법.The method of manufacturing an optical path control device according to claim 5, wherein the support part is formed to a thickness of 1 to 2 탆 by sputtering or chemical vapor deposition. 제1항에 있어서, 상기 멤브레인을 상기 지지부와 동일한 물질로 형성하는 광로조절장치의 제조방법.The method of claim 1, wherein the membrane is formed of the same material as the support. 제7항에 있어서, 상기 멤브레인을 스퍼터링 또는 화학기상침적법에 의해 0.7∼2㎛의 두께로 형성하는 광로조절장치의 제조방법.The method of claim 7, wherein the membrane is formed to a thickness of 0.7 to 2 탆 by sputtering or chemical vapor deposition. 제1항에 있어서, 상기 플러그를 텅스텐(W) 또는 티타늄(Ti)의 전도성 금속으로 형성하는 광로조절장치의 제조방법.The method of claim 1, wherein the plug is formed of a conductive metal of tungsten (W) or titanium (Ti). 제1항에 있어서, 상기 신호전극을 백금(Pt) 또는 백금/티타늄(Pt/Ti)으로 형성하는 광로조절장치의 제조방법.The method of claim 1, wherein the signal electrode is formed of platinum (Pt) or platinum / titanium (Pt / Ti). 제1항에 있어서, 상기 변형부를 BaTiO3, PZT(Pb(Zr,Ti)O3) 또는 PZLT((Pb, La)(Zr, Ti)O3)의 압전세라믹으로 형성하는 광로조절장치의 제조방법.The optical path control apparatus of claim 1, wherein the deformable part is formed of a piezoelectric ceramic of BaTiO 3 , PZT (Pb (Zr, Ti) O 3 ) or PZLT ((Pb, La) (Zr, Ti) O 3 ). Way. 제1항에 있어서, 상기 변형부를 PMN(Pb(Mg,Nb)O3)의 전왜세라믹으로 형성하는 광로조절장치의 제조방법.The method of manufacturing an optical path control device according to claim 1, wherein the deformable part is formed of a total distortion ceramic of PMN (Pb (Mg, Nb) O 3 ). 제11 또는 제12항에 있어서, 상기 변형부를 Sol-Gel법, 스퍼터링 또는 CVD법에 의해 0.7∼2㎛의 두께로 형성하는 광로조절장치의 제조방법.The manufacturing method of the optical path control apparatus of Claim 11 or 12 which forms the said deformation | transformation part in thickness of 0.7-2 micrometers by the Sol-Gel method, sputtering, or CVD method. 제13항에 있어서, 상기 변형부를 소결하여 패로브스카이트(Perovskite)상으로 상 변이(phase transition)시키는 광로조절장치의 제조방법.The method of claim 13, wherein the deforming part is sintered to phase shift into a perovskite phase. 제1항에 있어서, 상기 반사막은 은(Ag) 또는 알루미늄(Al)의 반사특성 및 전기특성이 좋은 물질로 형성하는 광로조절장치의 제조방법.The method of claim 1, wherein the reflective film is formed of a material having good reflection and electrical properties of silver (Ag) or aluminum (Al). 제15항에 있어서, 상기 반사막을 스퍼터링 또는 진공증착방법에 의해 500∼1000Å의 두께로 형성하는 광로조절장치의 제조방법.The method of manufacturing an optical path control device according to claim 15, wherein the reflective film is formed to a thickness of 500 to 1000 mW by sputtering or vacuum deposition. 제1항에 있어서, 상기 화소를 레이저에 의한 절단이나 포토리쏘그래피에 의해 화소를 분리하는 광로조절장치의 제조방법.The method of claim 1, wherein the pixel is separated by laser cutting or photolithography. 제1항에 있어서, 상기 보호막을 산화실리콘 또는 질화실리콘으로 형성하는 광로조절장치의 제조방법.The method of claim 1, wherein the protective film is formed of silicon oxide or silicon nitride. 제1항에 있어서, 상기 희생막을 불산(HF)용액에서 양극반응시켜 다공질화를 시키는 광로조절장치의 제조방법.The method of claim 1, wherein the sacrificial film is subjected to anodization in a hydrofluoric acid (HF) solution to perform porous nitriding. 제19항에 있어서, 상기 희생막을 전원의 양극에 연결하고, 음극을 불산용액에 침지시켜 양극반응을 하는 광로조절장치의 제조방법.20. The method of claim 19, wherein the sacrificial film is connected to a positive electrode of a power source, and the negative electrode is immersed in a hydrofluoric acid solution to perform an anodic reaction. 제20항에 있어서, 상기 희생막을 3-10분 양극반응시키는 광로조절장치의 제조방법.21. The method of claim 20, wherein the sacrificial film is anodized for 3-10 minutes. 제1항에 있어서, 상기 희생막을 수산화칼륨(KOH)용액으로 제거하는 광로조절장치의 제조방법.The method of claim 1, wherein the sacrificial film is removed with a potassium hydroxide (KOH) solution. 제22항에 있어서, 상기 희생막을 1분동안 식각하여 제거하는 광로조절장치의 제조방법.The method of claim 22, wherein the sacrificial layer is removed by etching for 1 minute. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940015345A 1994-06-30 1994-06-30 Method for manufacturing lightpath modulation device KR0178192B1 (en)

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KR100233997B1 (en) * 1996-11-27 1999-12-15 전주범 Light path apparatus and its fabrication method
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KR100233994B1 (en) * 1996-12-12 1999-12-15 전주범 Thin film light path apparatus with advanced light efficiency and its fabrication method
KR100237603B1 (en) * 1996-10-29 2000-01-15 전주범 Actuator of thin film actuated mirror array
KR100239045B1 (en) * 1996-09-25 2000-01-15 전주범 Method for manufacturing thin film actuated mirror array
KR100237604B1 (en) * 1996-10-29 2000-01-15 전주범 Fabrication method for thin film actuated mirror array
KR100244514B1 (en) * 1996-09-24 2000-02-01 전주범 Thin film actuated mirror array and its fabrication method
KR100244513B1 (en) * 1996-12-27 2000-02-01 전주범 Thin film actuated mirror array and its fabrication method
KR100244518B1 (en) * 1996-12-30 2000-02-01 전주범 Fabrication method of thin film actuated mirror array
KR100243861B1 (en) * 1996-09-25 2000-02-01 전주범 Method for manufacturing thin film actuated mirror array
KR100244520B1 (en) * 1996-12-30 2000-02-01 전주범 Fabrication method of thin film actuated mirror array
KR100243860B1 (en) * 1996-09-25 2000-02-01 전주범 Method for manufacturing thin film actuated mirror arrray
KR100247592B1 (en) * 1996-12-27 2000-03-15 전주범 Tma manufacturing method
KR100247590B1 (en) * 1996-12-30 2000-03-15 전주범 Tma apparatus and its manufacture method
KR100251105B1 (en) * 1997-03-28 2000-05-01 전주범 Fabrication method of thin film type light-path controlling device
KR100254942B1 (en) * 1996-09-24 2000-05-01 전주범 A bonding method of the pad of thin film actuated mirror arrays
KR100251106B1 (en) * 1996-12-11 2000-05-01 전주범 Method for fabricating thin film type light-path controlling device
KR100251107B1 (en) * 1997-04-29 2000-05-01 전주범 Thin film type light-path controlling device and its fabrication method
KR100251308B1 (en) * 1997-04-22 2000-05-01 전주범 Thin film type device for controlling light path and its fabrication method
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KR100244514B1 (en) * 1996-09-24 2000-02-01 전주범 Thin film actuated mirror array and its fabrication method
KR100254942B1 (en) * 1996-09-24 2000-05-01 전주범 A bonding method of the pad of thin film actuated mirror arrays
KR100243860B1 (en) * 1996-09-25 2000-02-01 전주범 Method for manufacturing thin film actuated mirror arrray
KR100243861B1 (en) * 1996-09-25 2000-02-01 전주범 Method for manufacturing thin film actuated mirror array
KR100239045B1 (en) * 1996-09-25 2000-01-15 전주범 Method for manufacturing thin film actuated mirror array
KR100237604B1 (en) * 1996-10-29 2000-01-15 전주범 Fabrication method for thin film actuated mirror array
KR100237603B1 (en) * 1996-10-29 2000-01-15 전주범 Actuator of thin film actuated mirror array
KR100233997B1 (en) * 1996-11-27 1999-12-15 전주범 Light path apparatus and its fabrication method
KR100233995B1 (en) * 1996-12-11 1999-12-15 전주범 Thin film actuated mirror array and its fabrication method
KR100251106B1 (en) * 1996-12-11 2000-05-01 전주범 Method for fabricating thin film type light-path controlling device
KR100233994B1 (en) * 1996-12-12 1999-12-15 전주범 Thin film light path apparatus with advanced light efficiency and its fabrication method
KR100247592B1 (en) * 1996-12-27 2000-03-15 전주범 Tma manufacturing method
KR100244513B1 (en) * 1996-12-27 2000-02-01 전주범 Thin film actuated mirror array and its fabrication method
KR100244518B1 (en) * 1996-12-30 2000-02-01 전주범 Fabrication method of thin film actuated mirror array
KR100244520B1 (en) * 1996-12-30 2000-02-01 전주범 Fabrication method of thin film actuated mirror array
KR100247590B1 (en) * 1996-12-30 2000-03-15 전주범 Tma apparatus and its manufacture method
KR100251105B1 (en) * 1997-03-28 2000-05-01 전주범 Fabrication method of thin film type light-path controlling device
KR100251308B1 (en) * 1997-04-22 2000-05-01 전주범 Thin film type device for controlling light path and its fabrication method
KR100251107B1 (en) * 1997-04-29 2000-05-01 전주범 Thin film type light-path controlling device and its fabrication method
KR102290558B1 (en) 2020-03-26 2021-08-18 김태헌 Transparent film yarn enhanced tensile strength and sun penetration, and Film sheet for greenhouse which it has inserted as support materals, and Manufacturing method thereof

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