KR960001348B1 - Contact image sensor - Google Patents
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- KR960001348B1 KR960001348B1 KR1019920019539A KR920019539A KR960001348B1 KR 960001348 B1 KR960001348 B1 KR 960001348B1 KR 1019920019539 A KR1019920019539 A KR 1019920019539A KR 920019539 A KR920019539 A KR 920019539A KR 960001348 B1 KR960001348 B1 KR 960001348B1
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- amorphous silicon
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- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 16
- 239000010409 thin film Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 230000003287 optical effect Effects 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 2
- 230000003321 amplification Effects 0.000 description 6
- 238000003199 nucleic acid amplification method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 102100040678 Programmed cell death protein 1 Human genes 0.000 description 1
- 101710089372 Programmed cell death protein 1 Proteins 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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Abstract
Description
제1도는 종래의 포토다이오드를 설명하기 위한 단면도.1 is a cross-sectional view illustrating a conventional photodiode.
제2도는 제1도를 이용한 밀착 영상센서를 설명하기 위한 등가회로도.2 is an equivalent circuit diagram for explaining a close-up image sensor using FIG.
제3도는 본 발명의 광도전형 포토센서를 설명하기 위한 단면도.3 is a cross-sectional view illustrating a photoconductive photosensor of the present invention.
제4도는 제3도를 이용한 밀착 영상센서를 설명하기 위한 등가회로도.4 is an equivalent circuit diagram for explaining a close-up image sensor using FIG.
제5도는 제4도의 선택신호를 설명하기 위한 파형도.5 is a waveform diagram for explaining the selection signal of FIG.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 기판 2 : 하부전극1 substrate 2 lower electrode
3 : 비정질실리콘 4 : 투명전극3: amorphous silicon 4: transparent electrode
5, 6 : 제1도전형 비정질실리콘5, 6: first conductive amorphous silicon
본 발명은 밀착영상센서(Image Sensor)에 관한 것으로, 특히 광도전형 광센서를 형성하고 구동회로를 내장하여 외부 구동회로를 단순화시킬 수 있는 반도체장치의 밀착영상센서에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image sensor, and more particularly, to an image sensor of a semiconductor device capable of simplifying an external driving circuit by forming a photoconductive optical sensor and embedding a driving circuit.
종래의 밀착영상센서에 사용되는 광센서는 제1도와 같이 기판(1) 위 중앙에 하부전극(Cr)(2), 비정질실리콘(3) 투명전극(Indum Tin Oxied)(4)이 차례로 형성되어 이루어진다.As the optical sensor used in the conventional close-up image sensor, as shown in FIG. 1, the lower electrode Cr (2) and the amorphous silicon (3) transparent electrode (Indum Tin Oxied) 4 are sequentially formed on the substrate 1 in the center. Is done.
이와 같은 종래의 기술은 쇼트키 다이오드(Schottky Diode) 형태로 되어 있으며 비정질실리콘(3)은 광감응 역할을 하고, 박막트랜지스터(Thin Film Transistor)에 의해 스위칭(Switching)되어 광전류를 외부로 발생시킨다.Such a conventional technology is in the form of a Schottky diode, and the amorphous silicon 3 plays a photosensitive role and is switched by a thin film transistor to generate a photocurrent to the outside.
또한, 제2도를 참조하여 보면 각 포토다이오드(Photo Diode)(D1-D9)의 애노우드(Anode)가 바이어스패드(Bias Pad)(PD)에 연결되어 있을 때 포토다이오드 (D1 -D9)에 광이 조사되면, 포토다이오드(D1-D9)의 각 비정질실리콘 (3)에 광캐리어 (Carrier)가 기생용량의 광전하로 축적되며 게이트 라인 패드(Gate Line Pad)(G1-G3)에 의해 각 박막트랜지스터(Q1-Q9)를 온시키므로써 포토다이오드 (D1-D9)의 광전하는 박막트랜지스터(Q1-Q9)를 통해 데이타 라인 패드(Data Line Pad)(D1-D3)에 각각 인가된다.Also, referring to FIG. 2, when the anodes of each photo diode D1-D9 are connected to the bias pad PD, the photo diodes D1-D9 are connected to the photodiodes D1-D9. When light is irradiated, photocarriers are accumulated as parasitic photoelectric charges in each of the amorphous silicon 3 of the photodiodes D1-D9, and each thin film is formed by a gate line pad G1-G3. By turning on the transistors Q1-Q9, the photoelectric charges of the photodiodes D1-D9 are respectively applied to the data line pads D1-D3 through the thin film transistors Q1-Q9.
따라서, 상기 데이타 라인 패드(D1-D3)의 광전하를 전기적 신호로 증폭하여 영상의 명암을 감지하는데, 상기 증폭을 하기 위한 외부 구동회로의 증폭단은 데이타 라인 수만큼 필요하며 ˝A4˝ 용지크기의 전체화소수 1728개를 32개의 게인트 라인으로 구동할 경우 54개의 데이타 라인이 필요하므로 외부증폭단도 54개가 필요하다.Therefore, the photocharge of the data line pads (D1-D3) is amplified by an electrical signal to detect the contrast of the image. The amplification stage of the external driving circuit for the amplification is required as many as the number of data lines. Driving 1728 total pixels with 32 gain lines requires 54 data lines, requiring 54 external amplifier stages.
그러나, 이와 같은 종래의 기술에 있어서는 다음과 같은 결점이 있다.However, this conventional technique has the following drawbacks.
첫째, 외부회로 구동부에 박막트랜지스터(Q1-Q9) 스위칭용 펄스구동부와 신호증폭단을 마련해야 한다.First, the pulse driver for switching the thin film transistors Q1-Q9 and the signal amplifier stage must be provided in the external circuit driver.
둘째, 포토다이오드(D1-D9)에 의한 광전류는 10-9A 정도로 매우 작기 때문에 광전하 축적시간이 많이 소요되고, 축적된 전하량을 전기적 신호로 증폭하기 위한 특수한 증폭단이 필요하다.Second, since the photocurrent by the photodiodes D1-D9 is very small, such as 10 -9 A, it takes a lot of time to accumulate photocharges and requires a special amplifier stage to amplify the accumulated charges into an electrical signal.
세째, 데이타 라인이 많기 때문에 외부에 많은 증폭단을 마련해야 한다.Third, since there are many data lines, many amplification stages must be provided externally.
본 발명은 이와 같은 종래의 결점을 감안하여 안출한 것으로, 광도전형 광센서를 형성하여 광전류를 크게하며 구동회로를 내장하므로써 증폭단 및 외부 구동회로를 단순하게 할 수 있는 밀착영상센서를 제공하는데 그 목적이 있다.SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks, and provides a close-contact image sensor that can simplify the amplification stage and the external driving circuit by forming a photoconductive optical sensor to increase the photocurrent and embedding the driving circuit. There is this.
이하에서 이와 같은 목적을 달성하기 위한 본 발명의 실시예를 첨부된 도면에 의하여 상세히 설명하면 다음과 같다.Hereinafter, an embodiment of the present invention for achieving such an object will be described in detail with reference to the accompanying drawings.
제3도는 본 발명의 광도전형 광센서 단면도로, 기판(1) 위 중앙에 하부전극(2), 제1도전형(n+), 비정질실리콘(5), 비정질실리콘(3), 제1도전형(n+), 비정질실리콘 (6), 투명전극(4)을 차례로 적층하여 형성한다.3 is a cross-sectional view of a photoconductive optical sensor of the present invention, in which a lower electrode 2, a first conductive type (n + ), an amorphous silicon (5), an amorphous silicon (3), and a first conductive are placed in the center on the substrate (1). A mold (n + ), amorphous silicon (6), and transparent electrode (4) are stacked in this order.
이와 같은 본 발명에 의한 광도전형 광센서를 이용한 밀착이미지센서를 제4도 및 제5도를 참조하여 보면, 상기 광도전형 광센서(S1-SL)의 광전류값을 스위칭하여 광신호를 외부에 전달하는 박막트랜지스터(T1-TL)로 구성되며 상기 박막트랜지스터 (T1-TL)의 구동은 화소원격단자(P1-Pm)로 구동되고 블록을 선택하는 박막트랜지스터(T11-T1n)는 블록선택단자(B1-Bn)에 의해 구동된다.Referring to FIGS. 4 and 5, the close-up image sensor using the photoconductive optical sensor according to the present invention transmits an optical signal to the outside by switching the photocurrent value of the photoconductive optical sensor S1-SL. The thin film transistors T1-TL are formed, and the thin film transistors T1-TL are driven by the pixel remote terminals P1-Pm, and the thin film transistors T11-T1n for selecting a block are the block selection terminals B1. -Bn).
그리고, 블록선택단자(B1-Bn)는 박막트랜지스터(T11-T1n)의 각 게이트에 연결되어 각 박막트랜지스터(T11-T1n)가 스위칭하도록 하므로써 블록선택이 가능하며 그 블록선택을 위한 박막트랜지스터(T11-T1n)의 각 드레인은 바이어스단자 (PD 1)에 연결된다.The block selection terminals B1-Bn are connected to the gates of the thin film transistors T11-T1n so that the thin film transistors T11-T1n switch so that the block can be selected and the thin film transistor T11 for the block selection is provided. Each drain of -T1n) is connected to the bias terminal PD 1.
또한, 화소선택단자(P1-Pm)는 박막트랜지스터(T1-TL)의 각 게이트에 연결되어 박막트랜지스터(T1-TL)를 스위칭함에 따라 화소선택이 이루어진다.In addition, the pixel selection terminals P1-Pm are connected to respective gates of the thin film transistors T1 -TL to switch the thin film transistors T1 -TL to perform pixel selection.
본 발명에 의한 밀착이미지센서 동작을 살펴보면, 각 광도전형 광센서(S1-SL)에 빛을 조사할시 광캐리어에 의해 광도전형 광센서(S1-SL)의 저항치가 감소하고, 광센서(S1-SL)에 빛을 조사하지 않을 경우 비정질실리콘(3)에 광캐리어가 없기 때문에 광센서(S1-SL)는 부도체와 같이 저항치가 커져 전류의 흐름이 억제된다.Looking at the close-up image sensor operation according to the present invention, when irradiating light to each photoconductive optical sensor (S1-SL), the resistance value of the photoconductive optical sensor (S1-SL) is reduced by the optical carrier, the optical sensor (S1) If the light is not irradiated to -SL), since there is no optical carrier in the amorphous silicon 3, the photosensors S1-SL, like the insulator, have a large resistance value, thereby suppressing the flow of current.
즉, 광센서(S1-SL)는 빛을 조사하는 여부에 따라 저항치가 변화되므로써 외부에 광전류의 크기 변화로 나타나며 박막트랜지스터(T1-TL)의 온/오프에 따라 저항 (R1) 양단을 거쳐 외부에 광신호를 발생한다.That is, the photo sensor S1-SL appears as a change in the magnitude of the photocurrent due to the change in the resistance value depending on whether light is irradiated to the outside, and goes through both ends of the resistor R1 according to the on / off of the thin film transistor T1-TL. To generate an optical signal.
상기와 같이 외부에 광신호를 발생하는 파형을 제5도를 참조하여 보면, 화소의 광신호를 얻기 위해 첫번째 블록선택단자(B1)에 제5도(a)와 같은 스위칭 전압을 인가하고, 첫번째 화소선택단자(P1)에 (D)와 같은 스위칭전압을 인가하면 출력단에 첫번째 화소의 광신호가 출력된다.Referring to FIG. 5, a waveform for generating an optical signal to the outside as described above is applied to the first block selection terminal B1 to apply a switching voltage as shown in FIG. 5A to obtain an optical signal of a pixel. When a switching voltage such as (D) is applied to the pixel selection terminal P1, the optical signal of the first pixel is output to the output terminal.
또한, 볼록선택단자(B2-Bn)에 제5도(b)(c)와 같은 스위칭 전압을 인가하고, 화소선택단자(P2-Pn)에 (e)(f)(g)와 같은 전압을 인가하면 출력단에 화소의 광신호가 순차적으로 출력한다.Further, a switching voltage as shown in FIG. 5 (b) (c) is applied to the convex selection terminals B2-Bn, and a voltage such as (e) (f) (g) is applied to the pixel selection terminals P2-Pn. When applied, the optical signals of the pixels are sequentially output to the output terminal.
그리고, 포토센서(S1-SL)는 제1도전형 비정질실리콘(5,6)에 의해 저항구조를 갖으므로써 큰 광전류를 흘릴 수 있고, 전극(2,4)사이가 1μm 내외로 캐리어 이동거리가 짧기 때문에 광응답시간도 매우 짧다.In addition, the photosensors S1-SL have a resistance structure by the first conductive amorphous silicon 5 and 6, which allows a large photocurrent to flow therebetween, and the carrier movement distance between the electrodes 2 and 4 is about 1 μm. Because of the short photoresponse time is also very short.
또한, 볼록선택단자(B1-Bn)에 의해 포토센서(S1-SL)를 볼록별로 스위칭하므로써 외부증폭단은 하나만 있으면 되므로 신호처리 회로도 간단해지고, 블록선택단자 (B1-Bn)와 화소선택단자(P1-Pn)의 조작으로 화소 광신호를 선택적으로 구동시킬 수 있다.In addition, by switching the photosensors S1-SL by convex by the convex selection terminals B1-Bn, only one external amplification stage is required, which simplifies the signal processing circuit, and the block selection terminals B1-Bn and the pixel selection terminals P1. -Pn) can selectively drive the pixel optical signal.
단, 상기 도면중 L, m, n은 임의의 양의 정수이다.In the above drawings, L, m, and n are any positive integers.
이상에서 셜명한 바와 같이 본 발명은 다음과 같은 효과가 있다.As described above, the present invention has the following effects.
첫째, 큰 광신호를 얻을 수 있으므로 외부의 신호처리 회로가 간단해진다.First, a large optical signal can be obtained, which simplifies the external signal processing circuit.
둘째, 신호처리 라인이 한개 뿐이므로 상호 데이타 라인간의 간섭이 없으므로 잡음이 감소하여 신호/잡음비를 크게 할 수 있다.Second, since there is only one signal processing line, there is no interference between data lines, so noise can be reduced to increase the signal / noise ratio.
세째, 출력단이 1개이므로 증폭단이 간편해진다.Third, the amplification stage is simplified because there is one output stage.
네째, 신호증폭단 보다 구동펄수 회로가 간단하므로 외부 구동회로의 제작비가 저렴해진다.Fourth, since the driving pulse circuit is simpler than the signal amplifier stage, the manufacturing cost of the external driving circuit becomes low.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920019539A KR960001348B1 (en) | 1992-10-23 | 1992-10-23 | Contact image sensor |
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| KR1019920019539A KR960001348B1 (en) | 1992-10-23 | 1992-10-23 | Contact image sensor |
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| KR940010402A KR940010402A (en) | 1994-05-26 |
| KR960001348B1 true KR960001348B1 (en) | 1996-01-26 |
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| KR1019920019539A KR960001348B1 (en) | 1992-10-23 | 1992-10-23 | Contact image sensor |
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