KR960000217B1 - Semiconductor device mold epoxy resin - Google Patents

Abstract

This is a new epoxy resin composition for sealing semiconductor device, which has a short curing time, an enhanced moisture resistance and improved electrical properties. To product epoxy resin, which composed of epoxy resin, organic flame retardant, inorganic flame retardant, modifier, and other additives, one compound selected from formulas (I) to (IV) is used as a curing agent. The amount of the curing agent used is 3.0-10.0wt.% with respect to the weight of epoxy resin.

Description

Epoxy Resin Compositions for Semiconductor Device Encapsulation (1)

The present invention relates to a thermosetting resin composition, and more particularly, to an epoxy resin composition for encapsulating a semiconductor device having a short curing time and improved moisture resistance and electrical properties.

Recently, due to the development of semiconductor device encapsulation technology and semiconductor device encapsulation equipment, the automatic molding method is used more than the manual single-plunger molding method, so the encapsulant also increases the curing reaction time to be suitable for automatic molding. It is necessary to improve the curing reactivity so as to be possible.

As a related art, as disclosed in Japanese Patent Laid-Open Publication Nos. 91-24116, 91-45622, 91-88818, 91-292325 and the like, the curing rate is increased by imidazoles, tertiary amines, phosphines, tetraphenylborate salts, and the like. There is a way to control it.

However, the above methods have a problem in that moisture resistance and electrical properties become weak due to the epoxy group and the hydroxyl group remaining in the encapsulant after the molding process.

The present invention is to solve the above problems, an object of the present invention is to provide an epoxy resin composition for encapsulating semiconductor device improved curing reactivity, moisture resistance and electrical properties.

The present inventors have studied to achieve the above object, as a result of using the curing agent having the following structure is faster than the allocresol novolac phenol resin commonly used as epoxy resin curing agent increases the curing reaction rate In addition to these improvements, it has been found that moisture resistance and electrical properties can prevent degradation.

Hereinafter, the present invention will be described in detail.

Compositions and preferred composition ratios of the present invention are shown in Table 1) below.

TABLE 1

Specifically, the components of the composition used in the present invention, an epoxy resin is an oxo-cresol novolak-type or bis-phenol A-type epoxy resin having at least two epoxy groups in one molecule of EOCN-1020 ), Softening point 65-70 ℃, epoxy equivalent 190-210), ESCN-195XL (Sumitomo Chemical Co., Ltd., softening point 65-70 ℃, epoxy equivalent 200-210), etc., and epoxy resins depending on the content of inorganic filler Adjust the softening point, viscosity and so on.

Organic flame retardants are brominated novolac epoxy or brominated bis-phenol A epoxy, etc. BREN-S (Japan Chemical Co., Ltd., softening point 85-100 ° C, epoxy equivalent 250-300), ESB-400T (Sumitomo Chemical Co., Ltd.) Softening point 65-85 ℃, epoxy equivalent 300-400), etc., and the curing agent is Osocrecresol novolak-type phenolic resin PSM-4261 (Gunyoung Chemical Co., Ltd., softening point 70-85 ℃, hydroxyl equivalent 105-107) and A curing agent such as Structural Formulas (I)-(IV) is used.

Modifiers include epoxy, amine, and carboxyl modified silicone oils having molecular weights of 1000-8000, silicone powders, and other thermoplastic resins. Inorganic filler A is a high-purity fused spherical silica with an average particle size of 20-3O m. B is a high purity melt crushed silica having an average particle size of 3-10 μm.

As the inorganic flame retardant, antimony trioxide or antimony penta oxide may be used having an average particle size of 5 μm or less, and a binder may be a glycidoxy propyl trimethoxy silane system having an epoxy group or an amine group.

The release agent is used by mixing natural waxes, synthetic waxes, fatty acids, etc. in an appropriate ratio, and the amount of use is appropriately 0.5-1.0 parts by weight.

The colorant is carbon black, and the curing accelerator is mixed with imidazoles, phosphines, tertiary amines, tetratriphenyl borate salts, etc. at an appropriate ratio depending on the degree of integration of the semiconductor chip.

Embodiments of the present invention are as follows.

Example 1

In the composition of Table 1), the curing agent A uses an oxo-cresol novolak-type phenolic resin, the curing agent B uses 15.0 parts by weight of the component of formula (I), and the remainder is basis weight in a weight ratio as described in Table 1). After finely pulverizing in a pulverizing mixer, melt-mixed for 7 minutes at a temperature of 80 ℃ in a two-roll MILL (KNEADER), cooled to room temperature and pulverized to a powder state.

Epoxy resin composition prepared as described above using a heat transfer molding machine (175 ℃, 180 ℃, 45 sec, 90 sec, 70kg / ㎠) fluidity, curing rate, glass transition temperature, moisture resistance, electrical characteristics (volume resistance) and the like, The epoxy, hydroxyl groups, etc. which remain | survived in hardened | cured material were measured, and the result is shown in Table 2).

Each measuring method is as follows.

* Liquidity measurement

It is measured by a heat transfer molding machine (175 ° C., 90 sec, 70 kg / cm 2) in a spiral flow mold by the EMMI-I-66 measuring method.

* Curing rate measurement

According to JIS-6910 method, the time which melts and hardens on a hotplate (175 degreeC) is measured.

* Glass transition temperature measurement

After the specimen is prepared according to ASTM-D-790, the glass transition temperature is measured using a thermal analyzer (TMA). At this time, the specimen molding conditions were 180 ° C., molding pressure 70 kg / cm 2, and the molding time was 45 sec.

* Moisture resistance measurement

Specimens for moisture resistance (width 4cm, length 2cm, thickness 0.5cm) are molded by a transfer molding machine (180 ℃, 45sec, 70kg / ㎠), and the weight of each specimen is heated after the basis weight term, saturated steam (121 ℃, 2atm) After leaving for 48 hours in the atmosphere, the amount of water (absorption rate) absorbed in a weight basis is measured.

* Measurement of electrical characteristics (volume resistance)

Specimens (diameter 10 cm, thickness 0.35 cm) were prepared by the ASTM-D-257 method, and the volume resistivity was measured at room temperature and high temperature (100 ° C) before and after 48 hours under heating and saturated steam (121 ° C, 2atm) atmosphere. .

* Measurement of unreacted epoxy group and hydroxyl group

The epoxy composition is molded in a transfer molding machine (180 ° C., 48 sec, 70 kg / cm 2) and the unreacted (epoxy, hydroxyl) is measured by FT-IR.

Example 2

Preparation and evaluation tests were carried out in the same manner as in Example 1), except that 5.0 parts by weight of Structural Formula (II) was used as the curing agent B of Example 1.

Example 3

Preparation and evaluation tests were carried out in the same manner as in Example 1), except that 3.0 parts by weight of Structural Formula (III) was used as the curing agent B of Example 1.

Example 4

Preparation and evaluation tests were carried out in the same manner as in Example 1), except that 3.0 parts by weight of Structural Formula (IV) was used as the curing agent B of Example 1.

Comparative Example 1

The preparation and evaluation test were carried out in the same manner as in Example 1, except that only 60.0 parts by weight of the curing agent A was used without using the curing agent B of Example 1).

TABLE 2

* 1: The epoxy composition was molded in DIP-18PIN PACKAGE, and then left for 500 hours in a heated, saturated steam (PCT: 121 ° C, 2atm) atmosphere, and then leakage current was measured.

In the present invention, as shown in Table 2), by using a curing agent having the same structure as the formula (I-IV) as the curing agent B in the epoxy resin composition to reduce the unreacted radical rapidly at short molding conditions (180 ℃, 45 sec) Absorption rate, volume resistance, etc. are improved, and the defect rate is improved by leakage current than conventional epoxy resin composition.

Claims (7)

In an epoxy resin composition composed of an epoxy resin, a phenol resin, an organic flame retardant, an inorganic flame retardant, a modifier, an inorganic filler, and other additives, a semiconductor device comprising a compound having the structure shown in the following structural formula (I) as a curing agent Epoxy resin composition for sealing. The epoxy resin composition for semiconductor element encapsulation according to claim 1, wherein the amount of the curing agent used is 5.0-15.0 parts by weight based on 100 parts by weight of the epoxy resin. In an epoxy resin composition composed of an epoxy resin, a phenol resin, an organic flame retardant, an inorganic flame retardant, a modifier, an inorganic filler, and other additives, a semiconducting agent using a compound having the structure shown in the following structural formula (II) as a curing agent Epoxy resin composition for device encapsulation. In an epoxy resin composition composed of an epoxy resin, a phenol resin, an organic flame retardant, an inorganic flame retardant, a modifier, an inorganic filler, and other additives, a semiconductor device characterized by using a compound having the structure shown in the following structural formula (III) as a curing agent. Epoxy resin composition for sealing. In an epoxy resin composition composed of an epoxy resin, a phenol resin, an organic flame retardant, an inorganic flame retardant, a modifier, an inorganic filler, and other additives, a semiconductor device characterized by using a compound having the structure shown in the following structural formula (IV) as a curing agent. Epoxy resin composition for sealing. The epoxy resin composition according to any one of claims 3 to 5, wherein the amount of the curing agent used is 3.0-10.0 parts by weight based on 100 parts by weight of the epoxy resin. The method of encapsulating a semiconductor device according to any one of claims 1 to 5, wherein an inorganic filler is used by mixing two or more kinds of spherical and rectangular silica having an average particle size of 3-10 µm and 20-30 µm. Epoxy resin composition.