KR960000062B1 - 수지상 웨브 결정의 성장 방법 및 장치 - Google Patents

수지상 웨브 결정의 성장 방법 및 장치 Download PDF

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Publication number
KR960000062B1
KR960000062B1 KR1019870013872A KR870013872A KR960000062B1 KR 960000062 B1 KR960000062 B1 KR 960000062B1 KR 1019870013872 A KR1019870013872 A KR 1019870013872A KR 870013872 A KR870013872 A KR 870013872A KR 960000062 B1 KR960000062 B1 KR 960000062B1
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South Korea
Prior art keywords
silicon
slot
interface
crystals
dendritic web
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Expired - Fee Related
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KR1019870013872A
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English (en)
Korean (ko)
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KR880007378A (ko
Inventor
폴 맥휴 제임스
죠지 사이덴스티커 레이몬드
스튜어트 던컨 챠알스
Original Assignee
에바라 솔라 인코포레이티드
리챠드 로시
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Publication of KR880007378A publication Critical patent/KR880007378A/ko
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1019870013872A 1986-12-05 1987-12-05 수지상 웨브 결정의 성장 방법 및 장치 Expired - Fee Related KR960000062B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US06/938,651 US4751059A (en) 1986-12-05 1986-12-05 Apparatus for growing dendritic web crystals of constant width
US938651 1986-12-05
US86-938651 1986-12-05

Publications (2)

Publication Number Publication Date
KR880007378A KR880007378A (ko) 1988-08-27
KR960000062B1 true KR960000062B1 (ko) 1996-01-03

Family

ID=25471742

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870013872A Expired - Fee Related KR960000062B1 (ko) 1986-12-05 1987-12-05 수지상 웨브 결정의 성장 방법 및 장치

Country Status (7)

Country Link
US (1) US4751059A (enExample)
JP (1) JP2551441B2 (enExample)
KR (1) KR960000062B1 (enExample)
AU (1) AU601511B2 (enExample)
GB (1) GB2206503B (enExample)
IN (1) IN168202B (enExample)
IT (1) IT1220052B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN168114B (enExample) * 1986-12-18 1991-02-09 Westinghouse Electric Corp
US4997628A (en) * 1989-08-24 1991-03-05 Westinghouse Electric Corp. Web growth configuration for higher productivity and 100% feed rate capability at wide widths
US4971650A (en) * 1989-09-22 1990-11-20 Westinghouse Electric Corp. Method of inhibiting dislocation generation in silicon dendritic webs
US6093244A (en) * 1997-04-10 2000-07-25 Ebara Solar, Inc. Silicon ribbon growth dendrite thickness control system
DE69936883T2 (de) * 1999-02-02 2008-02-28 Ebara Corp. Vorrichtung zur reglung der schichtdicke eines dendrits während der züchtung eines siliziumbandes
KR20030060660A (ko) * 2002-01-10 2003-07-16 손정일 앞/뒷면 구별 없는 양면 양말
US7348076B2 (en) 2004-04-08 2008-03-25 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
US7780782B2 (en) * 2007-06-08 2010-08-24 Evergreen Solar, Inc. Method and apparatus for growing a ribbon crystal with localized cooling
JP6025080B1 (ja) * 2015-12-26 2016-11-16 並木精密宝石株式会社 大型ｅｆｇ法用育成炉の熱反射板構造
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1090868B (de) * 1958-10-15 1960-10-13 Siemens Ag Verfahren zum Ziehen von einkristallinen Halbleiterstaeben aus Schmelzen
GB1150095A (en) * 1965-10-14 1969-04-30 Dow Corning Apparatus for production of dentritic crystals
US3511610A (en) * 1966-10-14 1970-05-12 Gen Motors Corp Silicon crystal growing
GB1209846A (en) * 1967-02-14 1970-10-21 Tyco Laboratories Inc Method and apparatus for growing inorganic filaments
US3617223A (en) * 1968-05-21 1971-11-02 Texas Instruments Inc Apparatus for forming monocrystalline ribbons of silicon
US4184907A (en) * 1977-03-17 1980-01-22 Mobil Tyco Solar Energy Corporation Control of capillary die shaped crystal growth of silicon and germanium crystals
US4217165A (en) * 1978-04-28 1980-08-12 Ciszek Theodore F Method of growing a ribbon crystal particularly suited for facilitating automated control of ribbon width
US4239734A (en) * 1978-07-13 1980-12-16 International Business Machines Corporation Method and apparatus for forming silicon crystalline bodies
US4271129A (en) * 1979-03-06 1981-06-02 Rca Corporation Heat radiation deflectors within an EFG crucible
US4289571A (en) * 1979-06-25 1981-09-15 Energy Materials Corporation Method and apparatus for producing crystalline ribbons
US4389377A (en) * 1981-07-10 1983-06-21 The United States Of America As Represented By The United States Department Of Energy Apparatus for growing a dendritic web
US4402786A (en) * 1981-09-01 1983-09-06 Mobil Solar Energy Corporation Adjustable heat shield assembly
IN168114B (enExample) * 1986-12-18 1991-02-09 Westinghouse Electric Corp
US4828808A (en) * 1987-09-02 1989-05-09 The United States Of America As Represented By The United States Department Of Energy Apparatus for silicon web growth of higher output and improved growth stability

Also Published As

Publication number Publication date
GB2206503A (en) 1989-01-11
AU601511B2 (en) 1990-09-13
IN168202B (enExample) 1991-02-16
IT1220052B (it) 1990-06-06
GB8725962D0 (en) 1987-12-09
KR880007378A (ko) 1988-08-27
US4751059A (en) 1988-06-14
JP2551441B2 (ja) 1996-11-06
GB2206503B (en) 1991-01-30
AU8098087A (en) 1988-06-09
JPS63144187A (ja) 1988-06-16
IT8741732A0 (it) 1987-12-02

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