KR950030223A - Single Sheet Low Pressure Chemical Vapor Deposition System - Google Patents

Single Sheet Low Pressure Chemical Vapor Deposition System Download PDF

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Publication number
KR950030223A
KR950030223A KR1019940007068A KR19940007068A KR950030223A KR 950030223 A KR950030223 A KR 950030223A KR 1019940007068 A KR1019940007068 A KR 1019940007068A KR 19940007068 A KR19940007068 A KR 19940007068A KR 950030223 A KR950030223 A KR 950030223A
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KR
South Korea
Prior art keywords
vapor deposition
chemical vapor
pressure chemical
low pressure
substrate
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Application number
KR1019940007068A
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Korean (ko)
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KR0144799B1 (en
Inventor
황철주
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황철주
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Priority to KR1019940007068A priority Critical patent/KR0144799B1/en
Publication of KR950030223A publication Critical patent/KR950030223A/en
Application granted granted Critical
Publication of KR0144799B1 publication Critical patent/KR0144799B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting

Abstract

본 발명은 저압 화학 증기 증착과 플라즈마 저압 화학 증기 증착을 겸용할 수 있도록 한 매염식 저압 화학 증기 증착장치에 관한 것이다. 종래 매엽식 플라즈마 저압 화학 증기 증착장치는 증착과정에서 기판과 샤워헤드에 증착된 막질을 RF발생기로 증착로내에 플라즈마를 발생시켜 제거하는데, 이때 샤워헤드가 손상되어 샤워헤드의 노즐공이 커지게 되며 이와 같이 샤워헤드의 노즐공의 크기가 변하면 화합물 소스 분사량이 달라지기 때문에 공정조건을 다시 설정하거나 교환하여야 하는데 이 샤워헤드는 고가의 SiC재질로 되어 있기 때문에 교환비용이 많이 소요되는 문제점이 있었다.The present invention relates to a mortar type low pressure chemical vapor deposition apparatus capable of combining low pressure chemical vapor deposition and plasma low pressure chemical vapor deposition. Conventional single-layer plasma low pressure chemical vapor deposition apparatus removes the film quality deposited on the substrate and the showerhead by generating a plasma in the deposition furnace with an RF generator, in which the showerhead is damaged and the nozzle hole of the showerhead becomes large. As the size of the nozzle hole of the shower head is changed, the amount of injection of the compound source is changed, so the process conditions must be set or replaced again. This shower head is expensive SiC material, which causes a high exchange cost.

본 발명은 일측에 웨이퍼(W)가 출입할 수 있는 웨이퍼 출입구(11)가 형성되고 타측에는 반응생성물을 배출하기 위한 배기관(12)이 형성되며 화합물 소스가스 주입관(13)이 형성된 증착기 베이스(10)와, 이 증착기 베이스(10)위에 장착되어 반응공간(23)을 제공하는 내부관(21)과, 이 내부관(21)을 그 사이에 화합물 소스가스 유동로(24)가 형성되도록 둘러싸는 외부관(22)을 가지는 증착로(20)와, 상기 내부관(21)에 일체로 형성되는 샤워헤드(30)와, 상기 반응공간(23)내에서 승강되는 기판(40)과 이 기판(40)에 결합되는 기판가열 수단(50)과, 상기 기판(40)에 설치되는 캐소드전극(60)과, 상기 외부관(22)의 외측 상부에 설치되는 이노드전극(70)과, 외부관(22)의 외주부에 설치된 증착된 가열수단(80) 및, RF발생기(90)로 구성되어 저압 화학 증기 증착과 플라즈마 저압 화학 증기 증착을 겸용할 수 있으면서도 샤워헤드와 기판에 증착되는 막질을 샤워헤드의 노즐공이 커지는 일이 없이 안전하게 제거할 수 있게 되는 것이다.In the present invention, a wafer entrance (11) through which the wafer (W) can enter and exit is formed, and an exhaust pipe (12) for discharging the reaction product is formed on the other side, and a deposition source base (compound source gas injection pipe 13) is formed ( 10) and an inner tube 21 mounted on the evaporator base 10 to provide a reaction space 23, and surrounding the inner tube 21 so that a compound source gas flow path 24 is formed therebetween. Is a deposition furnace 20 having an outer tube 22, a shower head 30 integrally formed in the inner tube 21, a substrate 40 that is elevated in the reaction space 23, and the substrate. The substrate heating means 50 coupled to the 40, the cathode electrode 60 provided on the substrate 40, the inode electrode 70 provided on the outer upper portion of the outer tube 22, and the outside Low pressure chemical vapor deposition and plasma low pressure chemical vapor comprising a heating means 80 and the RF generator 90 deposited on the outer circumference of the tube 22 The film can be used as a vapor deposition, but the film deposited on the showerhead and the substrate can be safely removed without increasing the nozzle hole of the showerhead.

Description

매엽식 저압 화학 증기 증착장치Single Sheet Low Pressure Chemical Vapor Deposition System

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 의한 매엽식 저압 화학 증기 증착장치의 일실시려를 도시하는 종단면도.1 is a longitudinal sectional view showing one embodiment of a sheet type low pressure chemical vapor deposition apparatus according to the present invention.

Claims (5)

일측에 웨이퍼(W)가 출입할 수 있는 웨이퍼 출입구(11)가 형성되고 타측에는 반응생성물을 배출하기 위한 배기관(12)이 형성되며 화합물 소스가스주입관(13)이 형성된 증착기 베이스(10)와, 이 증착기 베이스(10)위에 장착되어 반응공간(23)을 제공하는 내부관(21)과, 이 내부관(21)을 그 사이에 화합물 소스가스 유동로(24)가 형성되도록 둘러싸는 외부관(22)을 가지는 중착로(20)와, 상기 내부관(21)에 일체로 형성되는 샤워헤드(30)와, 상기 반응공간(23)내에서 승강되는 기판(40)과, 이 기판(40)에 결합되는 기판가열수단(50)과, 상기 기판(40)에 설치되는 캐소드전극(60)과, 상기 외부관(22)의 외측 상부에 설치되는 아노드전극(70)과, 외부관(22)의 외주부에 설치된 증착로 가열수단(80) 및, RF발생기(90)로 구성됨을 특징으로 하는 매엽식 저압 화학증기 증착장치.A wafer entrance 11 through which the wafer W can enter and exit, and an exhaust pipe 12 for discharging the reaction product is formed on one side, and a vapor deposition base 10 having a compound source gas injection pipe 13 formed thereon; And an inner tube 21 mounted on the evaporator base 10 to provide a reaction space 23, and an outer tube surrounding the inner tube 21 to form a compound source gas flow path 24 therebetween. The intermediate passage 20 having the 22, the shower head 30 formed integrally with the inner tube 21, the substrate 40 which is elevated in the reaction space 23, and the substrate 40 Substrate heating means 50 coupled to the cathode, a cathode electrode 60 provided on the substrate 40, an anode electrode 70 provided on the outer upper portion of the outer tube 22, and an outer tube ( Single-layer low-pressure chemical vapor deposition apparatus, characterized in that consisting of the heating means 80 and the RF generator 90 is installed on the outer peripheral portion of the 22. 제1항에 있어서, 상기 샤워헤드(30)가 내부관(21)의 상측에 일체형으로 형성된 것을 특징으로 하는 매엽식 저압 화학증기 증착장치.The single-layer low pressure chemical vapor deposition apparatus according to claim 1, wherein the shower head (30) is formed integrally on the inner tube (21). 제2항에 있어서, 상기 내부관(21)의 상면(21a)에는 화합물 소스가스 유입구(21b)가 형성되고, 이 상면(21a)의 하측에는 다수개의 노즐공(31)이 천공된 샤워헤드(30)가 일체로 형성된 것을 특징으로 하는 매엽식 저압 화학증기 증착장치.3. The shower head of claim 2, wherein a compound source gas inlet 21b is formed at an upper surface 21a of the inner tube 21, and a plurality of nozzle holes 31 are formed at a lower side of the upper surface 21a. Single leaf type low pressure chemical vapor deposition apparatus, characterized in that 30) is formed integrally. 제2항에 있어서, 상기 샤워헤드(30)는 내부관(21)의 상면(21a)의 다수개의 노즐공(31)을 천공하여서 된 것임을 특징으로 하는 매엽식 저압 화학증기 증착장치.The single-layer low pressure chemical vapor deposition apparatus according to claim 2, wherein the shower head is formed by drilling a plurality of nozzle holes 31 on the upper surface 21a of the inner tube 21. 제1항에 있어서, 상기 이노드전극(70)이 외부관(22)의 상측 상단에 설치된 것을 특징으로 하는 매엽식 저압 화학증기 증착장치.The single-layer low pressure chemical vapor deposition apparatus according to claim 1, wherein the inode electrode (70) is installed on an upper upper end of the outer tube (22). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임※ Note: The disclosure is based on the initial application.
KR1019940007068A 1994-04-04 1994-04-04 Single wafer type low pressure chemical vapor deposition apparatus KR0144799B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940007068A KR0144799B1 (en) 1994-04-04 1994-04-04 Single wafer type low pressure chemical vapor deposition apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940007068A KR0144799B1 (en) 1994-04-04 1994-04-04 Single wafer type low pressure chemical vapor deposition apparatus

Publications (2)

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KR950030223A true KR950030223A (en) 1995-11-24
KR0144799B1 KR0144799B1 (en) 1998-08-17

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003023835A1 (en) * 2001-08-06 2003-03-20 Genitech Co., Ltd. Plasma enhanced atomic layer deposition (peald) equipment and method of forming a conducting thin film using the same thereof
KR20200064712A (en) * 2018-11-29 2020-06-08 (주) 디에스테크노 Semiconductor manufacturing equipment with showerhead using SiC with improved etching properties

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3804913B2 (en) * 2000-09-19 2006-08-02 株式会社日立国際電気 Semiconductor device manufacturing method and semiconductor device manufacturing apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003023835A1 (en) * 2001-08-06 2003-03-20 Genitech Co., Ltd. Plasma enhanced atomic layer deposition (peald) equipment and method of forming a conducting thin film using the same thereof
KR20200064712A (en) * 2018-11-29 2020-06-08 (주) 디에스테크노 Semiconductor manufacturing equipment with showerhead using SiC with improved etching properties

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KR0144799B1 (en) 1998-08-17

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