KR970023821A - STO and BTO thin film manufacturing method and device thereof having high dielectric properties - Google Patents

STO and BTO thin film manufacturing method and device thereof having high dielectric properties Download PDF

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KR970023821A
KR970023821A KR1019950033877A KR19950033877A KR970023821A KR 970023821 A KR970023821 A KR 970023821A KR 1019950033877 A KR1019950033877 A KR 1019950033877A KR 19950033877 A KR19950033877 A KR 19950033877A KR 970023821 A KR970023821 A KR 970023821A
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sto
thin film
reaction
bto
high dielectric
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KR1019950033877A
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KR0180783B1 (en
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백용구
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김주용
현대전자산업주식회사
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Priority to US08/729,676 priority patent/US5670218A/en
Priority to CN96121174A priority patent/CN1069112C/en
Priority to JP26480596A priority patent/JP3218304B2/en
Priority to GB9918955A priority patent/GB2336850B/en
Priority to GB9620757A priority patent/GB2305940B/en
Priority to DE19641058A priority patent/DE19641058C2/en
Publication of KR970023821A publication Critical patent/KR970023821A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Abstract

본 발명은 고유전 특성을 가진 STO 및 BTO 박막 제조방법 및 그 장치에 관한 것으로, 박막 제조장치에 RF파워를 인가하여 플라즈마를 여기시킴으로써 다원계의 STO 또는 BTO 용 반응원료들이 증착반응에 쉽게 참여할 수 있도록 물리적 에너지로 해리반응을 조장하고, 플라즈마를 형성함으로써 해리된 반응원료 이온들이 매우 낮은 압력에서 고온으로 증착반응을 일으킬 수 있도록 조장하는 공정조건을 설정하며, 반응원료들이 열화반응 없이 재현성 있게 반응로에 도달하게 해주는 방식으로 원료를 공급하며, STO 또는 BTO 박막용 원료들의 대부분이 실온에서 고체이거나 액체 형태임에 따라 이들 반응원료가 기화되어 공급될 때, 가스관에 남아 있을 수 있는 잔류가스를 제거하면서 STO 또는 BTO박막을 증착함으로써 고유전 특성을 가진 양호한 박막을 형성할 수 있다.The present invention relates to a STO and BTO thin film manufacturing method and a device having a high dielectric property, by applying RF power to the thin film manufacturing apparatus to excite the plasma, the reaction materials for STO or BTO of multiple systems can easily participate in the deposition reaction. To promote dissociation reaction with physical energy, and to form plasma to set process conditions to promote dissociation of reaction raw material ions at high temperature at very low pressure. Feeds the raw materials in a manner that allows them to reach, and as most of the raw materials for STO or BTO thin films are solid or liquid at room temperature, when these reaction raw materials are vaporized and supplied, they remove residual gas which may remain in the gas pipe. By depositing STO or BTO thin films, good thin films with high dielectric properties can be formed. have.

Description

고유전 특성을 가진 에스.티.오(STO) 및 비.티.오.(BTO) 박막제조방법과 그 장치STO and BTO thin film manufacturing method and device thereof having high dielectric properties

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 방법에 따른 STO 및 BTO박막증착용 장치의 구성을 도시한 단면도.1 is a cross-sectional view showing the configuration of the STO and BTO thin film deposition apparatus according to the method of the present invention.

Claims (14)

고유전 특성을 가진 STO 및 BTO 박막 제조방법에 있어서, RF 파워를 인가하여 플라즈마를 여기시킴으로써 다원계의 STO 또는 STO용 반응원료들이 증착반응에 쉽게 참여할 수 있는 이온상태가 생성되도록 물리적 에너지로 해리반응을 유도하는 단계와, 상기 여기된 플라즈마에 의해 해리된 반응원료 이온들이 낮은 압력에서 고온으로 증착반응을 일으킬 수 있도록 공정조건을 설정하는 단계와, 상기 반응원료들이 저증기압과 고온하에서 열화반응없이 반응로에 공급되도록 아민기를 리건드로 붙여 반응원료를 공급하는 단계와, 고온에서의 열화반응 및 기상반응올 억제하기 위해 샤워헤드까지의 온도제어 수단을 구비하는 단계와, 반응로 내부에서 가스관에 남아있는 기화된 반응원로의 잔류가스를 퍼징가스를 사용하여 제거하면서 STO 또는 BTO 박막을 증착하는 단계로 구성되는 것을 특징으로 하는 고유전 특성을 가진 STO 및 BTO 박막 제조방법.In the STO and BTO thin film manufacturing method having high dielectric properties, by dissipating the plasma by applying RF power, the dissociation reaction by physical energy is generated so that the ionic state of the multi-system STO or STO reaction materials can easily participate in the deposition reaction. Setting the process conditions so that the reaction raw material ions dissociated by the excited plasma may cause a deposition reaction at a high temperature at a low pressure, and reacting the reaction raw materials without deterioration under low steam pressure and high temperature Supplying the reaction raw material by attaching an amine group to the regenerator so as to be supplied to the furnace, and providing a temperature control means up to the shower head to suppress deterioration reaction and gas phase reaction at high temperature, and remaining in the gas pipe inside the reactor. Deposition of STO or BTO thin film while removing residual gas from vaporized reaction source using purge gas BTO and STO thin film manufacturing method having a high dielectric property is characterized in that the step consisting of. 제1항에 있어서 상기 퍼징가스로 기화된 아민기 케미컬 또는 N2가스를 사용하는 것에 특징으로 하는 고유전 특성을 가진 STO 및 BTO박막 제조방법.The method for manufacturing STO and BTO thin films having high dielectric properties according to claim 1, wherein an amine group chemical vaporized with the purge gas or N 2 gas is used. 제2항에 있어서 상기 퍼징가스는 반응로에 인접된 매니폴드를 통하여 곧바로 펌프로 배출되는 것을 특징으로 하는 고유전 특성을 가진 STO 및 BTO 박막 제조방법.The method of claim 2, wherein the purging gas is discharged to the pump directly through a manifold adjacent to the reactor. 제1항 또는 제2항에 있어서 기화된 반응원료 및 퍼징용 가스가 가스관 및 배기관에서 재응측이 일어나는 것을 방지하기 위해 가스관 내부온도를 200∼300℃로 유지되게 하는 것을 특징으로 하는 고유전 특성을 가진 STO 및 BTO 박막 제조방법.The high dielectric property of claim 1 or 2, wherein the vaporized reaction raw material and the purging gas are maintained at a temperature of 200 to 300 DEG C in order to prevent recondensation in the gas pipe and the exhaust pipe. STO and BTO thin film manufacturing method having. 제1항에 있어서 상기 박막증착 과정중 반응원료들간의 기상반응에 의해 파티클이 형성되는 것을 방지하기 위해 샤워 헤드를 일정온도의 고온으로 유지시키고, 반응원료에 교류형 RF 파워를 인가하는 것을 특징으로 하는 고유전 특성을 가진 STO 및 BTO 박막 제조방법.The method according to claim 1, wherein the shower head is maintained at a high temperature at a constant temperature to prevent particles from being formed by the gas phase reaction between the reaction materials during the thin film deposition process, and an AC type RF power is applied to the reaction materials. STO and BTO thin film manufacturing method having high dielectric properties. 제5항에 있어서 상기 샤워헤드의 온도는 200~250℃에서 제어되도록 하는 것을 특징으로 하는 고유전 특성을 가진 STO 및 BTO 박막 제조방법.The method of claim 5, wherein the temperature of the shower head is controlled at 200 ~ 250 ℃ STO and BTO thin film manufacturing method having a high dielectric property, characterized in that. 제1항에 있어서 상기 배플가이드 및 RF일렉트로드용 플레이트에 형성됨 박막을 CF4나 C2F6, NF3,SF6등과 O2를 플라즈마로 여기시켜 식각시키는 것을 특징으로 하는 고유전 특성을 가진 STO 및 BTO박막 제조방법.The STO having high dielectric properties according to claim 1, wherein the thin film is formed by etching CF 4 or C 2 F 6 , NF 3 , SF 6, and O 2 into a plasma. And BTO thin film production method. 고유전 특성을 가진 STO 및 BTO박막 증착장치에 있어서, 장치의 내부공간을 형성하기 위해, 벽면으로 내부를 둘러싸는 챔버 몸체부와, 상기 챔버 몸체부의 상부에 위치하며 박막형성을 반응원료가 삽입되는 매니폴드와, 상기 매니폴드내의 반응원료를 가스상태로 변환시켜 웨이퍼상에 분사시키 는 샤워 헤드와, 상기 샤워 헤드와 웨이퍼 및 히터블럭 주위를 감싸며 상기 샤워 헤드에서 분사된 가스가 넓게 확산되거나 진공포트등으로 빨리 빠져 나가지 못하도록 하는 배플 가이드와, 웨이퍼의 상부에 위치하여 플라즈마를 형성할 수 있는 RF 일렉트로드용 플레이트를 구비하는 것을 특징으로 하는 STO 및 BTO 박막 증착장치.In the STO and BTO thin film deposition apparatus having a high dielectric property, in order to form the internal space of the device, the chamber body portion surrounded by the wall surface, and the reaction material is placed on the chamber body portion to form a thin film A manifold, a shower head which converts the reaction materials in the manifold into a gas state, and sprays it onto a wafer; a gas diffused from the shower head is widely spread around the shower head, the wafer, and the heater block; STO and BTO thin film deposition apparatus comprising a baffle guide for preventing the rapid exit and the like, and a plate for the RF electroload which is formed on the top of the wafer to form a plasma. 제8항에 있어서 상기 매니폴드 내부에 온도저하에 의해 상온에서 액체 및 고체상태인 반응원료가 다시 응축되는 것을 방지하기 위해 내부 온도를 일정 온도상태로 가열 또는 제어하는 장치가 구비되어 있는 것을 특징으로 하는 STO 및 STO박막 증착장치.9. The apparatus of claim 8, wherein a device for heating or controlling the internal temperature to a predetermined temperature is provided in the manifold to prevent condensation of the reaction raw materials in the liquid and solid state at room temperature by the temperature decrease. STO and STO thin film deposition apparatus. 제8항에 있어서 상기 RF 일렉트로드용 플레이트는 직경 0.5~1.5mm정도의 와이어가 2~3mm 간격으로 배열된 것을 특징으로 히는 STO 및 BTO박막 증착장치.[9] The STO and BTO thin film deposition apparatus of claim 8, wherein the plate for the RF electrorod is arranged at intervals of 2 to 3 mm with wires having a diameter of about 0.5 to 1.5 mm. 제10항에 있어서 상기 RF 일렉트로드용 플레이트는 그물(mesh) 형태로 형성된을 특징으로 하는 STO 및 BTO박막 증착 장치.The STO and BTO thin film deposition apparatus according to claim 10, wherein the RF electrorod plate is formed in a mesh form. 제8항에 있어서 상기 배플 가이드는 원통형상의 절연물질로 형성된 것을 특징으로 하는 STO 및 BTO 박막 증착장치.The STO and BTO thin film deposition apparatus according to claim 8, wherein the baffle guide is formed of a cylindrical insulating material. 제12항에 있어서 상기 절연물질은 세라믹 또는 석영중 어느 하나인 것을 특징으로 하는 STO 및 BTO 박막 증착장치.The STO and BTO thin film deposition apparatus according to claim 12, wherein the insulating material is either ceramic or quartz. 제8항 또는 제12항에 있어서 상기 배플 가이드의 하부단부와 웨이퍼가 놓이는 하부기판 사이의 간격은 3~5mm인 것을 특징으로 하는 STO 및 BTO 박막 증착장치.The STO and BTO thin film deposition apparatus according to claim 8 or 12, wherein a distance between the lower end of the baffle guide and the lower substrate on which the wafer is placed is 3 to 5 mm. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950033877A 1995-10-04 1995-10-04 Sto having high dielectricity and method of manufacturing bto thin film and apparatus thereof KR0180783B1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1019950033877A KR0180783B1 (en) 1995-10-04 1995-10-04 Sto having high dielectricity and method of manufacturing bto thin film and apparatus thereof
US08/729,676 US5670218A (en) 1995-10-04 1996-10-03 Method for forming ferroelectric thin film and apparatus therefor
CN96121174A CN1069112C (en) 1995-10-04 1996-10-04 Method for forming ferroelectric thin film and apparatus therefor
JP26480596A JP3218304B2 (en) 1995-10-04 1996-10-04 High dielectric thin film manufacturing method
GB9918955A GB2336850B (en) 1995-10-04 1996-10-04 Apparatus for forming ferroelectric thin film
GB9620757A GB2305940B (en) 1995-10-04 1996-10-04 Method for forming ferroelectric thin film
DE19641058A DE19641058C2 (en) 1995-10-04 1996-10-04 Method of forming a ferroelectric thin film and device therefor

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WO2003023835A1 (en) * 2001-08-06 2003-03-20 Genitech Co., Ltd. Plasma enhanced atomic layer deposition (peald) equipment and method of forming a conducting thin film using the same thereof
KR100460304B1 (en) * 2002-07-26 2004-12-04 주식회사 선익시스템 Thin film deposition system of electroluminecence display
KR100474133B1 (en) * 2002-05-02 2005-03-08 주성엔지니어링(주) Plasma electrode structure of plasma enhanced chemical vapor deposition apparatus
KR100734744B1 (en) * 2006-01-11 2007-07-03 주식회사 아이피에스 Method of forming thin film of high-dielectric composed of multi-component
CN113690051A (en) * 2021-06-30 2021-11-23 中国科学院深圳先进技术研究院 Multi-component relaxation ferroelectric film material with superlattice structure and ultrahigh energy storage efficiency and preparation method thereof

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KR100584998B1 (en) * 2003-12-29 2006-05-29 주식회사 하이닉스반도체 Fabricating method of ferroelectric capacitor in semiconductor device
KR101147908B1 (en) * 2005-08-29 2012-05-25 주성엔지니어링(주) Substrate manufacturing apparatus comprising wall liner
KR101598174B1 (en) * 2014-05-14 2016-02-29 광운대학교 산학협력단 Method for forming micropattern of BTO film

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WO2003023835A1 (en) * 2001-08-06 2003-03-20 Genitech Co., Ltd. Plasma enhanced atomic layer deposition (peald) equipment and method of forming a conducting thin film using the same thereof
KR100474133B1 (en) * 2002-05-02 2005-03-08 주성엔지니어링(주) Plasma electrode structure of plasma enhanced chemical vapor deposition apparatus
KR100460304B1 (en) * 2002-07-26 2004-12-04 주식회사 선익시스템 Thin film deposition system of electroluminecence display
KR100734744B1 (en) * 2006-01-11 2007-07-03 주식회사 아이피에스 Method of forming thin film of high-dielectric composed of multi-component
CN113690051A (en) * 2021-06-30 2021-11-23 中国科学院深圳先进技术研究院 Multi-component relaxation ferroelectric film material with superlattice structure and ultrahigh energy storage efficiency and preparation method thereof

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