KR0144799B1 - Single wafer type low pressure chemical vapor deposition apparatus - Google Patents

Abstract

The present invention relates to a sheet type low pressure chemical vapor deposition apparatus capable of combining low pressure chemical vapor deposition and plasma low pressure chemical vapor deposition. Conventional single-layer plasma low pressure chemical vapor deposition apparatus removes the film quality deposited on the substrate and the showerhead by the plasma generator to generate plasma in the deposition furnace during the deposition process, in which the showerhead is damaged and the nozzle hole of the showerhead becomes large. As the size of the nozzle hole of the shower head is changed, the amount of injection of the compound source is changed, so the process conditions must be set or replaced again. This shower head is expensive SiC material, which causes a high exchange cost. In the present invention, a wafer entrance (11) through which the wafer (W) can enter and exit is formed, and an exhaust pipe (12) for discharging the reaction product is formed on the other side, and a deposition source base (compound source gas injection pipe 13) is formed ( 10) and an inner tube 21 mounted on the evaporator base 10 to provide a reaction space 23 and surrounding the inner tube 21 so that a compound source gas flow passage 24 is formed therebetween. The deposition furnace 20 having an outer tube 22, a shower head 30 integrally formed in the inner tube 21, a substrate 40 that is elevated in the reaction space 23, and A substrate heating means (50) coupled to the substrate (40), a cathode electrode (60) provided on the substrate (40), an anode electrode (70) provided on an outer upper portion of the outer tube (22), A low pressure chemical vapor deposition and a plasma low pressure chemical vapor are composed of a heating means 80 and an RF generator 90 formed on the outer periphery of the outer tube 22. It can be combined with all the complex will be able to be deposited on the film quality shower head and the substrate can be removed two days without large holes of the shower head nozzle securely.

Description

Single Sheet Low Pressure Chemical Vapor Deposition System

1 is a longitudinal sectional view showing an embodiment of a sheet type low pressure chemical vapor deposition apparatus according to the present invention.

2 is a longitudinal sectional view showing the electric field formed between the cathode electrode and the anode electrode in this embodiment.

3 is a longitudinal sectional view showing another embodiment of the sheet type low pressure chemical vapor deposition apparatus according to the present invention.

4 is a longitudinal sectional view showing an electric field formed between a cathode electrode and an anode electrode in this embodiment.

5 is a longitudinal sectional view showing an embodiment of an internal quartz tube.

6 is a longitudinal sectional view showing an example of a conventional single-sheet plasma low pressure chemical vapor deposition apparatus.

* Explanation of symbols for main parts of the drawings

10: base 20: deposition furnace

21: inner tube 22: outer tube

30: Shower head 31: Nozzle ball

40: substrate 50: substrate heating means

60: cathode electrode 70: anode electrode

80: heating furnace heating means 90: RF generator

The present invention relates to a single wafer low pressure chemical vapor deposition apparatus, and in particular, single wafer processing type low pressure chemical vapor deposition and single wafer plasma type low pressure chemical vapor deposition (single wafer processing type plasma enhanced low pressure chemical). The present invention relates to a single-sheet low pressure chemical vapor deposition apparatus which can serve as a vapor deposion, and can perform a simple cleaning process without damaging the shower head by going in-situ.

Generally, in the semiconductor manufacturing process, a low pressure chemical vapor deposition apparatus or a plasma low pressure chemical vapor deposition apparatus is used to deposit a compound such as a nitride film, an oxide film, or a silicon film having a property of an insulator, a dielectric, or a conductor on a wiper in a thin film form. have.

Although semiconductor manufacturing equipment is developing from batch processing type to single wafer processing type, single-layer low pressure chemical vapor deposition apparatus has not been developed at present, and is currently being developed and used single-phase plasma low pressure chemical vapor. Since the deposition apparatus is of a cold-wall type, the quality of the deposited film is poor, and when the deposition furnace is cleaned, the showerhead located above the deposition furnace is damaged, thereby changing process conditions.

Hereinafter, a representative example of a conventional sheet type plasma low pressure chemical vapor deposition apparatus will be described.

In the conventional single wafer plasma low pressure chemical vapor deposition apparatus, as illustrated in FIG. 6, a wafer entrance la is formed in one side of the wafer W, and an exhaust pipe 1b for discharging the reaction product is formed at the other side. A vaporizer bears 1 formed, a vapor deposition furnace 2 mounted on the vaporizer base 1 to provide a deposition space, a showerhead 3 for spraying a compound source on top of the vapor deposition furnace, and a showerhead ( 3) an anode electrode 5 provided together with a substrate, a substrate heating means 7 provided on a substrate 4, a cathode electrode 6 and an RF generator 8 provided outside by deposition. .

However, since the conventional single-layer plasma low pressure chemical vapor deposition apparatus has a cold-wall method, the thermal effect is low, so that pinholes and cracks are easily generated in the deposited film. Not good. In addition, when the deposition reaction proceeds, the film is deposited not only on the wafer W, but also on the edge of the substrate 4 and the showerhead 3 used as the electrode.

The dry matter deposited on the substrate 4 and the shower head 3 is removed by generating a plasma in the deposition furnace 2 with the RF generator 8, in which the shower head 3 is damaged and the nozzle of the shower head 3 is removed. The ball 3a becomes large.

If the size of the nozzle hole 3a of the shower head 3 changes, the amount of compound source injection varies, so the process conditions must be set or replaced again. Since the shower head 3 is made of expensive SiC material, the replacement cost is high. There is a problem.

An object of the present invention can combine both low-pressure low-pressure chemical vapor deposition and plasma low-pressure chemical vapor deposition, excellent in the quality of the deposited film, and also to effectively remove the film deposited inside the deposition after the deposition reaction without damaging the showerhead. It is to provide a single sheet low pressure chemical vapor deposition apparatus that can be removed.

The object of the present invention, a wafer entrance to which a wafer can enter and exit on one side, an exhaust pipe for discharging the reaction product is formed on the other side, and a deposition source base having a compound source gas injection tube formed thereon, and mounted on the deposition base; A deposition furnace having an inner tube providing a space, an outer tube surrounding the inner tube to form a compound source gas flow path therebetween, a shower head integrally formed with the inner tube, and within the reaction space. A substrate for elevating, a substrate heating means coupled to the substrate, a cathode electrode provided on the substrate, an anode electrode provided on an outer upper portion of the outer tube, a deposition furnace heating means installed on an outer circumference of the outer tube, It is achieved by providing a low pressure chemical vapor deposition apparatus composed of an RF generator.

In addition, an object of the present invention is a wafer entrance (11) is formed on which one side (W) can enter and exit the exhaust pipe 12 for discharging the reaction product is formed on the other side and the compound source gas injection pipe (13) The formed evaporator base 10, an inner tube 21 mounted on the evaporator base 10 to provide a reaction space 23, and the inner tube 21 interposed therebetween with a compound source gas flow path 24. A deposition furnace 20 having an outer tube 22 enclosed to form a mold, a shower head 30 integrally formed with the inner tube 21, and a substrate 40 that is elevated in the reaction space 23. ), A substrate heating means 50 coupled to the substrate 40, a cathode electrode 60 provided on the substrate 40, and a deposition furnace heating means 80 provided on an outer circumferential portion of the outer tube 22. ) And the RF generator 90, and the outer tube 22 is formed of a conductive material, and is configured to serve as an anode electrode itself. Single wafer is achieved by providing a low pressure chemical vapor deposition apparatus as.

Hereinafter, the sheet type low pressure chemical vapor deposition apparatus according to the present invention will be described in detail according to the embodiment shown in the accompanying drawings.

FIG. 1 illustrates an embodiment of a sheet type low pressure chemical vapor deposition apparatus according to the present invention. As shown in FIG. 1, a wafer entrance 11 through which a wafer W may enter and exit is formed, and the reaction is performed on the other side. An exhaust pipe 12 for discharging the product is formed and an evaporator base 10 having a compound source gas injection tube 13 formed therein, and an inner tube 21 mounted on the evaporator base 10 to provide a reaction space 23. ) And the deposition tube 20 having an outer tube 22 surrounding the inner tube 21 to form a compound source gas flow path 24 therebetween, and integrally formed with the inner tube 21. A shower head 30, a substrate 40 that is elevated in the reaction space 23, a substrate heating means 50 coupled to the substrate 40, and a cathode electrode provided on the substrate 40. 60, the anode electrode 70 provided on the outer upper portion of the outer tube 22, and the outer peripheral portion of the outer tube 22 Set by heating means 80 and RF generator 90.

In the present embodiment, the inner tube 21 and the outer tube 22 are both used in the quartz tube, the gas inlet 21b is drilled in the upper surface 21a of the inner tube 21 and the upper surface 21a. The shower head 30 in which the plurality of nozzle holes 31 are drilled is formed integrally with the lower side.

The outer tube 22 is installed to hermetically surround the inner tube 21.

The cathode electrode 60 and the anode electrode 70 are connected to the output terminal of the RF generator 90 and the anode electrode 70 supports the heating means 80 by vapor deposition on the top of the external quartz tube 22. It is fixed to the support 81 to be installed.

Hereinafter, a low pressure chemical vapor deposition process and a cleaning process according to the present invention will be described.

After the substrate 40 is lowered by the substrate lifting means 41 to the loading / unloading position as shown in the solid line of FIG. 1, the pressure in the deposition furnace is brought to atmospheric pressure, and then the wafer W is opened through the wafer entrance 11. Is loaded onto the substrate 40.

While maintaining the pressure in the deposition furnace in a vacuum state, the substrate 40 loaded with the wafer W is raised to the deposition position as indicated by the dotted line in FIG.

At this time, by heating the heating means 80 by deposition to heat the inside of the deposition furnace to about 200 ~ 400 ℃, by operating the substrate heating means 50 to heat the wafer (W) to a process temperature of about 200 ~ 500 ℃, When the RF generator 90 is operated while injecting the compound source gas through the compound source gas injection pipe 11, as shown in FIG. 2, the electric field E is formed between the cathode electrode 60 and the anode electrode 70. The electric field is applied to the compound source gas injected into the deposition furnace 20 so that the plasma is generated in the deposition furnace 20.

The injected compound source gas is sufficiently pre-heated and premixed while rising upward through the compound source gas flow path 24 formed between the inner and outer tubes 21 and 22, and then the inner tube. (21) It is sprayed into the inner tube 21 through the shower head 30 on the upper side to deposit an excellent thin film on the wafer (W).

When a thin film is deposited on the wafer W, the substrate 40 is lowered to a loading / unloading position as shown in the solid line of FIG. Unload W).

In the above-described thin film deposition process, since the anode electrode 70 is located outside the deposition furnace, the thin film is not deposited, but is also deposited on the length of the substrate 40 used as the cathode electrode 60.

However, since the showerhead 30 is formed of quartz integrally with the inner tube 21 and is not used as an electrode, the showerhead 30 does not have a thin film deposited on the showerhead 30 and is not damaged even when the plasma is cleaned after the deposition process is completed.

After the deposition process is completed, a process of removing the thin film deposited on the edge of the substrate 40 used as an electrode is as follows.

When the wafer W is unloaded, the wafer entrance 11 is sealed and the substrate 40 is raised to the deposition position indicated by the dotted line in FIG. Plasma is generated in the deposition furnace 20 to remove the thin film deposited on the edge of the substrate 40.

When the in-situ plasma cleaning is completed in the above manner, the substrate 40 is lowered to the loading / unloading position and the next deposition process is repeated.

The low pressure chemical vapor deposition process in the low pressure chemical vapor deposition apparatus according to the present embodiment is as follows.

The wafer W is loaded in the same manner as in plasma low pressure chemical vapor deposition, and then the substrate 40 loaded with the wafer W is raised to the deposition position while maintaining the pressure in the deposition furnace in a vacuum state.

At this time, by heating the heating means 80 by deposition to 200 ~ 400 ℃ the inside of the deposition furnace, by operating the substrate heating means 50 to heat the wafer (W) to a process temperature of 500 ~ 900 ℃ compound The compound source gas is injected through the source gas injection pipe 13.

The injected compound source gas is sufficiently preheated and mixed while rising upward between the inner and outer tubes 21 and 22, and then injected into the inner tube 21 to deposit a thin film having excellent properties on the wafer W. .

When the thin film is deposited on the wafer, the wafer W is unloaded in the same manner as in the plasma low pressure chemical vapor deposition.

In the deposition process, a thin film is deposited at the edge of the substrate 40 that heats the wafer W to the deposition process temperature, but the inner tubes 21 and 22 are maintained at 200 to 400 ° C. in which the ambient temperature is below the deposition temperature. For this reason, no thin film is deposited on the inner tubes 21 and 22.

As described above, when the thin film deposition process is completed, the thin film deposited on the edge of the substrate 40 should be removed. This method may be performed in the same manner as in the case of plasma low pressure chemical vapor deposition.

3 shows another embodiment of the present invention. In this embodiment, the outer tube 22 is made of a conductive material and the outer tube 22 is formed without installing the anode electrode on the outer upper end of the outer tube 22. ) Is connected to the RF generator 90 so that the outer tube 22 itself also serves as the anode electrode, and since the other configuration and effect is the same as in the above-described embodiment, the same reference numerals are given to the same parts, Description is omitted.

Also in this embodiment, when the RF generator 90 is operated, the electric field E is applied between the cathode electrode 60 and the outer tube 22 serving as the anode electrode as shown in FIG. The electric field is applied to the compound source gas injected into the (20) to generate plasma in the deposition furnace (20).

5 shows another embodiment of the inner tube 21 and the shower head 30 according to the present invention. In this embodiment, the shower head 30 has a plurality of nozzles on the top surface 21a of the inner tube 21. It is made by drilling the ball 31, the same reference numerals are given to the other components and detailed description thereof will be omitted.

As described above, the present invention can use a combination of a low pressure chemical vapor deposition process and a plasma low pressure compound vapor deposition process, thereby increasing the thermal effect and depositing a thin film having excellent characteristics, and installing an anode electrode on the outer upper end of the outer tube. In addition, since the shower head is manufactured integrally with the inner tube, the deposition furnace can be cleaned without damaging the shower head even in the in-situ plasma cleaning.

The present invention can be used for the research and manufacture of next-generation semiconductor devices in mass production lines and laboratories in the semiconductor manufacturing field, and can greatly contribute to achieving high quality of semiconductor devices.

Claims (5)

A wafer entrance 11 through which the wafer W can enter and exit is formed on one side, and an exhaust pipe 12 for discharging the reaction product is formed on the other side, and the evaporator base 10 having the compound source gas injection pipe 13 formed thereon; And an inner tube 21 mounted on the evaporator base 10 to provide a reaction space 23, and an outer tube surrounding the inner tube 21 to form a compound source gas flow path 24 therebetween. 22, a shower head 30 integrally formed in the inner tube 21, a substrate 40 which is elevated in the reaction space 23, and the substrate 40. A substrate heating means 50 coupled to the cathode, a cathode electrode 60 provided on the substrate 40, an anode electrode 70 provided on an outer upper portion of the outer tube 22, and an outer tube 22. Single-layer low-pressure chemical vapor deposition apparatus, characterized in that consisting of the heating means 80 and the RF generator 90 is installed in the outer peripheral portion of the deposition. The single-layer low pressure chemical vapor deposition apparatus according to claim 1, wherein the shower head (30) is formed integrally on the inner tube (21). 3. The shower head of claim 2, wherein a compound source gas inlet 21b is formed at an upper surface 21a of the inner tube 21, and a plurality of nozzle holes 31 are formed at a lower side of the upper surface 21a. Single sheet type low pressure chemical vapor deposition apparatus, characterized in that 30) is formed integrally. The single-layer low pressure chemical vapor deposition apparatus according to claim 2, wherein the shower head is formed by drilling a plurality of nozzle holes 31 on the upper surface 21a of the inner tube 21. A wafer entrance 11 through which the wafer W can enter and exit is formed on one side, and an exhaust pipe 12 for discharging the reaction product is formed on the other side, and the evaporator base 10 having the compound source gas injection pipe 13 formed thereon; And an inner tube 21 mounted on the evaporator base 10 to provide a reaction space 23, and an outer tube surrounding the inner tube 21 to form a compound source gas flow path 24 therebetween. A deposition furnace 20 having a 22, a shower head 30 integrally formed in the inner tube 21, a substrate 40 that is elevated in the reaction space 23, and the substrate 40. Substrate heating means (50) coupled to the substrate, the cathode electrode (60) installed on the substrate (40), and the heating means (80) and the RF generator (90) formed by the deposition on the outer periphery of the outer tube (22). It consists of, wherein the outer tube 22 is formed of a conductive material itself is a single leaf type, characterized in that configured to serve as an anode electrode Chemical vapor deposition apparatus.