KR950028659U - Plasma chemical vapor deposition equipment equipped with a backflow prevention device - Google Patents

Plasma chemical vapor deposition equipment equipped with a backflow prevention device

Info

Publication number
KR950028659U
KR950028659U KR2019940005735U KR19940005735U KR950028659U KR 950028659 U KR950028659 U KR 950028659U KR 2019940005735 U KR2019940005735 U KR 2019940005735U KR 19940005735 U KR19940005735 U KR 19940005735U KR 950028659 U KR950028659 U KR 950028659U
Authority
KR
South Korea
Prior art keywords
vapor deposition
chemical vapor
prevention device
backflow prevention
plasma chemical
Prior art date
Application number
KR2019940005735U
Other languages
Korean (ko)
Other versions
KR970003595Y1 (en
Inventor
최종남
안병대
유충근
Original Assignee
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 현대전자산업 주식회사 filed Critical 현대전자산업 주식회사
Priority to KR2019940005735U priority Critical patent/KR970003595Y1/en
Publication of KR950028659U publication Critical patent/KR950028659U/en
Application granted granted Critical
Publication of KR970003595Y1 publication Critical patent/KR970003595Y1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
KR2019940005735U 1994-03-21 1994-03-21 Plasma cvd apparatus having anti-reverse flow structure KR970003595Y1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019940005735U KR970003595Y1 (en) 1994-03-21 1994-03-21 Plasma cvd apparatus having anti-reverse flow structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019940005735U KR970003595Y1 (en) 1994-03-21 1994-03-21 Plasma cvd apparatus having anti-reverse flow structure

Publications (2)

Publication Number Publication Date
KR950028659U true KR950028659U (en) 1995-10-20
KR970003595Y1 KR970003595Y1 (en) 1997-04-18

Family

ID=19379357

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019940005735U KR970003595Y1 (en) 1994-03-21 1994-03-21 Plasma cvd apparatus having anti-reverse flow structure

Country Status (1)

Country Link
KR (1) KR970003595Y1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100795662B1 (en) * 2006-12-28 2008-01-21 동부일렉트로닉스 주식회사 Apparatus for etching wafer improved exhaust structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100795662B1 (en) * 2006-12-28 2008-01-21 동부일렉트로닉스 주식회사 Apparatus for etching wafer improved exhaust structure

Also Published As

Publication number Publication date
KR970003595Y1 (en) 1997-04-18

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Legal Events

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Payment date: 20080617

Year of fee payment: 12

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