KR950025887A - Method for manufacturing photoresist pattern of semiconductor device - Google Patents

Method for manufacturing photoresist pattern of semiconductor device Download PDF

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Publication number
KR950025887A
KR950025887A KR1019940002447A KR19940002447A KR950025887A KR 950025887 A KR950025887 A KR 950025887A KR 1019940002447 A KR1019940002447 A KR 1019940002447A KR 19940002447 A KR19940002447 A KR 19940002447A KR 950025887 A KR950025887 A KR 950025887A
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KR
South Korea
Prior art keywords
semiconductor device
photoresist pattern
photoresist
photoresist film
manufacturing
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Application number
KR1019940002447A
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Korean (ko)
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KR970002430B1 (en
Inventor
배상만
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940002447A priority Critical patent/KR970002430B1/en
Publication of KR950025887A publication Critical patent/KR950025887A/en
Application granted granted Critical
Publication of KR970002430B1 publication Critical patent/KR970002430B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

본 발명은 반도체 소자의 제조방법에 관한 것으로서, 고집적 반도체 소자의 금속배선등과 같이 폭이 좁고 단차가 심한 하부층의 식각마스크로 사용되는 두꺼운 감광막패턴을 형성할 때 감광막 도포 및 노광공정을 두 차례 이상 반복 실시하였으므로, 노광공정시의 공정마진이 증가되어 감광막 패턴의 브릿지 발생이 방지되고 감광수지 잔류물이 남지 않아 공정수율 및 신뢰성이 향상되며, 반도체 소자의 고집적화에 유리하다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, wherein a photoresist coating and exposure process is performed two or more times when forming a thick photoresist pattern used as an etch mask of a narrow and stepped lower layer such as metal wiring of a highly integrated semiconductor device. Since it was repeatedly performed, the process margin during the exposure process is increased to prevent bridge formation of the photoresist pattern, and no residue of the photoresist is left to improve process yield and reliability, which is advantageous for high integration of semiconductor devices.

Description

반도체 소자의 감광막패턴 제조 방법Method for manufacturing photoresist pattern of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도(A)~(C)는 본 발명에 따른 반도체소자의 감광막 패턴 제조공정도.2 (A) to (C) is a manufacturing process diagram of the photosensitive film pattern of the semiconductor device according to the present invention.

Claims (1)

반도체웨이퍼상에 제1감광막을 형성하는 공정과, 상기 제1감광막을 소정의 노광마스크를 사용하여 일차노광하는 공정과, 상기 제1감광막상에 제2감광막을 도포하는 공정과, 상기 제2감광막을 상기 노광마스크로 이차 노광하는 공정과, 상기 제1 및 제2감광막을 현상하여 감광막 패턴을 형성하는 공정을 구비하는 반도체 소자의 감광막패턴 제조방법.Forming a first photoresist film on a semiconductor wafer, firstly exposing the first photoresist film using a predetermined exposure mask, applying a second photoresist film on the first photoresist film, and the second photoresist film. And a step of performing secondary exposure with the exposure mask, and developing the first and second photoresist films to form a photoresist pattern. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940002447A 1994-02-08 1994-02-08 Method of manufacturing photoresist pattern of semiconductor device KR970002430B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940002447A KR970002430B1 (en) 1994-02-08 1994-02-08 Method of manufacturing photoresist pattern of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940002447A KR970002430B1 (en) 1994-02-08 1994-02-08 Method of manufacturing photoresist pattern of semiconductor device

Publications (2)

Publication Number Publication Date
KR950025887A true KR950025887A (en) 1995-09-18
KR970002430B1 KR970002430B1 (en) 1997-03-05

Family

ID=19377064

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940002447A KR970002430B1 (en) 1994-02-08 1994-02-08 Method of manufacturing photoresist pattern of semiconductor device

Country Status (1)

Country Link
KR (1) KR970002430B1 (en)

Also Published As

Publication number Publication date
KR970002430B1 (en) 1997-03-05

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