KR950021158A - Method for forming fine line width of metal semiconductor field effect transistor using optical stepper - Google Patents

Method for forming fine line width of metal semiconductor field effect transistor using optical stepper Download PDF

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Publication number
KR950021158A
KR950021158A KR1019930029349A KR930029349A KR950021158A KR 950021158 A KR950021158 A KR 950021158A KR 1019930029349 A KR1019930029349 A KR 1019930029349A KR 930029349 A KR930029349 A KR 930029349A KR 950021158 A KR950021158 A KR 950021158A
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KR
South Korea
Prior art keywords
photoresist film
pattern
effect transistor
field effect
optical stepper
Prior art date
Application number
KR1019930029349A
Other languages
Korean (ko)
Inventor
양전욱
강석봉
최영규
박철순
박형무
Original Assignee
양승택
재단법인 한국전자통신연구소
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Publication date
Application filed by 양승택, 재단법인 한국전자통신연구소 filed Critical 양승택
Priority to KR1019930029349A priority Critical patent/KR950021158A/en
Publication of KR950021158A publication Critical patent/KR950021158A/en

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Abstract

본 발명은 금속 반도체 전계효과 트랜지스터소자의 제조방법에 관한 것으로특히 패턴전사과정에서 광학적스탭퍼를 이용하여 포토레지스트막을 2중 노광하여 미세한 패턴을 형성하는 방법에 관한 것이다. 본 발명은 반절연GaAs기판(1)상에 포지티브 포토레지스트막(2)을 도포하고 열처리를 한 후, 마스크(3)상의 패턴크기로부터 일정배율 축소하여 광학적 스텝퍼로 1차 노광시키는 공정과, 상기 광학적 스텝퍼의 스테이지를 횡방향으로 일정거리 이동시켜 상기 포토레지스트막(2)에 2차 노광시켜 미세한 패턴의 크기를 형성하는 공정과, 상기 포토레지스트막(2)을 현상시키는 공정을 거쳐 완성된다. 따라서 본 발명은 금속 반도체 전계효과 트랜지스터의 게이트를 형성하는데 적용되며, 또한 미세한 선폭의 배선과 HEMT의 제작과 다른 미세한 패턴을 필요로 하는 소자의 제작에 이용된다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a metal semiconductor field effect transistor device, and more particularly, to a method of forming a fine pattern by double exposure of a photoresist film using an optical stepper during a pattern transfer process. The present invention is a process of applying a positive photoresist film (2) on the semi-insulating GaAs substrate (1), heat treatment, and then reducing the ratio by a predetermined magnification from the pattern size on the mask (3) and firstly exposing it with an optical stepper; The stage of the optical stepper is shifted by a predetermined distance in the lateral direction, and is subjected to the second exposure to the photoresist film 2 to form a fine pattern, and the process of developing the photoresist film 2. Therefore, the present invention is applied to the formation of a gate of a metal semiconductor field effect transistor, and is also used in the fabrication of devices requiring a fine pattern different from the fabrication of fine line width wiring and HEMT.

Description

광학적 스텝퍼를 이용한 금속반도체 전계효과 트랜지스터의 미세선폭 형성방법Method for forming fine line width of metal semiconductor field effect transistor using optical stepper

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제4도는 1,2차 노광후 현상에 의해 형성된 포지티브(positive) 레지스트막의 미세선폭을 나타낸 단면도.4 is a cross-sectional view showing the fine line width of the positive resist film formed by the first and second post-exposure development.

Claims (3)

금속 반도체 전계효과 트랜지스터 소자의 제조방법에 있어서, 반절연GaAs기판(1)상에 포지티브 포토레지스트막(2)을 도포하고 열처리를 한 후, 마스크(3)상의 패턴크기로부터 일정배율 축소하여 광학적 스텝퍼로 1차 노광시키는 공정과; 상기 광학적 스텝퍼의 스테이지를 횡방향으로 일정거리 이동시켜 상기 포토레지스트막(In the method of manufacturing a metal semiconductor field effect transistor device, after applying the positive photoresist film (2) on the semi-insulating GaAs substrate (1) and performing heat treatment, the optical stepper is reduced by a constant magnification from the pattern size on the mask (3). First exposure to light; By moving the stage of the optical stepper a predetermined distance in the transverse direction to the photoresist film ( 2)에 2차 노광시켜 미세한 패턴의 크기를 형성하는 공정과; 상기 포토레지스트막(Second exposure to 2) to form a fine pattern; The photoresist film ( 2)을 현상하는 공정을 포함하는 광학적 스텝퍼를 이용한 금속 반도체 전계효과 트랜지스터의 미세선폭 형성방법.A method of forming a fine line width of a metal semiconductor field effect transistor using an optical stepper including the step of developing 2). 제1항에 있어서, 상기 일정거리는 상기 마스크(3)상의 패턴의 크기보다 실제 형성하고자 하는 패턴의 크기를 뺀 거리인 것을 특징으로 하는 광학적 스텝퍼를 이용한 금속 반도체 전계효과 트랜지스터의 미세선폭 형성방법.The method of claim 1, wherein the predetermined distance is a distance obtained by subtracting the size of a pattern to be actually formed from the size of the pattern on the mask (3). 제1항에 있어서, 상기 패턴의 크기는 위치이동의 정확도에 의해 결정되는 것을 특징으로 하는 광학적 스텝퍼를 이용한 금속 반도체 전계효과 트랜지스터의 미세선폭 형성방법.The method of claim 1, wherein the size of the pattern is determined by an accuracy of position shift. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930029349A 1993-12-23 1993-12-23 Method for forming fine line width of metal semiconductor field effect transistor using optical stepper KR950021158A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930029349A KR950021158A (en) 1993-12-23 1993-12-23 Method for forming fine line width of metal semiconductor field effect transistor using optical stepper

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Application Number Priority Date Filing Date Title
KR1019930029349A KR950021158A (en) 1993-12-23 1993-12-23 Method for forming fine line width of metal semiconductor field effect transistor using optical stepper

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KR950021158A true KR950021158A (en) 1995-07-26

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100365727B1 (en) * 1999-12-09 2002-12-26 한국전자통신연구원 Fabrication method for metal nano-wires by using carbon nanotube mask
KR100510020B1 (en) * 2000-08-31 2005-08-25 토쿄오오카코교 가부시기가이샤 Positive-working photoresist composition and resist patterning method using same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100365727B1 (en) * 1999-12-09 2002-12-26 한국전자통신연구원 Fabrication method for metal nano-wires by using carbon nanotube mask
KR100510020B1 (en) * 2000-08-31 2005-08-25 토쿄오오카코교 가부시기가이샤 Positive-working photoresist composition and resist patterning method using same

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