KR950021158A - Method for forming fine line width of metal semiconductor field effect transistor using optical stepper - Google Patents
Method for forming fine line width of metal semiconductor field effect transistor using optical stepper Download PDFInfo
- Publication number
- KR950021158A KR950021158A KR1019930029349A KR930029349A KR950021158A KR 950021158 A KR950021158 A KR 950021158A KR 1019930029349 A KR1019930029349 A KR 1019930029349A KR 930029349 A KR930029349 A KR 930029349A KR 950021158 A KR950021158 A KR 950021158A
- Authority
- KR
- South Korea
- Prior art keywords
- photoresist film
- pattern
- effect transistor
- field effect
- optical stepper
- Prior art date
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Abstract
본 발명은 금속 반도체 전계효과 트랜지스터소자의 제조방법에 관한 것으로특히 패턴전사과정에서 광학적스탭퍼를 이용하여 포토레지스트막을 2중 노광하여 미세한 패턴을 형성하는 방법에 관한 것이다. 본 발명은 반절연GaAs기판(1)상에 포지티브 포토레지스트막(2)을 도포하고 열처리를 한 후, 마스크(3)상의 패턴크기로부터 일정배율 축소하여 광학적 스텝퍼로 1차 노광시키는 공정과, 상기 광학적 스텝퍼의 스테이지를 횡방향으로 일정거리 이동시켜 상기 포토레지스트막(2)에 2차 노광시켜 미세한 패턴의 크기를 형성하는 공정과, 상기 포토레지스트막(2)을 현상시키는 공정을 거쳐 완성된다. 따라서 본 발명은 금속 반도체 전계효과 트랜지스터의 게이트를 형성하는데 적용되며, 또한 미세한 선폭의 배선과 HEMT의 제작과 다른 미세한 패턴을 필요로 하는 소자의 제작에 이용된다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a metal semiconductor field effect transistor device, and more particularly, to a method of forming a fine pattern by double exposure of a photoresist film using an optical stepper during a pattern transfer process. The present invention is a process of applying a positive photoresist film (2) on the semi-insulating GaAs substrate (1), heat treatment, and then reducing the ratio by a predetermined magnification from the pattern size on the mask (3) and firstly exposing it with an optical stepper; The stage of the optical stepper is shifted by a predetermined distance in the lateral direction, and is subjected to the second exposure to the photoresist film 2 to form a fine pattern, and the process of developing the photoresist film 2. Therefore, the present invention is applied to the formation of a gate of a metal semiconductor field effect transistor, and is also used in the fabrication of devices requiring a fine pattern different from the fabrication of fine line width wiring and HEMT.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제4도는 1,2차 노광후 현상에 의해 형성된 포지티브(positive) 레지스트막의 미세선폭을 나타낸 단면도.4 is a cross-sectional view showing the fine line width of the positive resist film formed by the first and second post-exposure development.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930029349A KR950021158A (en) | 1993-12-23 | 1993-12-23 | Method for forming fine line width of metal semiconductor field effect transistor using optical stepper |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930029349A KR950021158A (en) | 1993-12-23 | 1993-12-23 | Method for forming fine line width of metal semiconductor field effect transistor using optical stepper |
Publications (1)
Publication Number | Publication Date |
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KR950021158A true KR950021158A (en) | 1995-07-26 |
Family
ID=66851184
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930029349A KR950021158A (en) | 1993-12-23 | 1993-12-23 | Method for forming fine line width of metal semiconductor field effect transistor using optical stepper |
Country Status (1)
Country | Link |
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KR (1) | KR950021158A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100365727B1 (en) * | 1999-12-09 | 2002-12-26 | 한국전자통신연구원 | Fabrication method for metal nano-wires by using carbon nanotube mask |
KR100510020B1 (en) * | 2000-08-31 | 2005-08-25 | 토쿄오오카코교 가부시기가이샤 | Positive-working photoresist composition and resist patterning method using same |
-
1993
- 1993-12-23 KR KR1019930029349A patent/KR950021158A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100365727B1 (en) * | 1999-12-09 | 2002-12-26 | 한국전자통신연구원 | Fabrication method for metal nano-wires by using carbon nanotube mask |
KR100510020B1 (en) * | 2000-08-31 | 2005-08-25 | 토쿄오오카코교 가부시기가이샤 | Positive-working photoresist composition and resist patterning method using same |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |