KR950021704A - Thin film infrared sensor and manufacturing method - Google Patents

Thin film infrared sensor and manufacturing method Download PDF

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Publication number
KR950021704A
KR950021704A KR1019930027475A KR930027475A KR950021704A KR 950021704 A KR950021704 A KR 950021704A KR 1019930027475 A KR1019930027475 A KR 1019930027475A KR 930027475 A KR930027475 A KR 930027475A KR 950021704 A KR950021704 A KR 950021704A
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KR
South Korea
Prior art keywords
film
thin film
forming
electrode
infrared sensor
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Application number
KR1019930027475A
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Korean (ko)
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KR970010737B1 (en
Inventor
남효진
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이헌조
엘지전자 주식회사
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Priority to KR1019930027475A priority Critical patent/KR970010737B1/en
Publication of KR950021704A publication Critical patent/KR950021704A/en
Application granted granted Critical
Publication of KR970010737B1 publication Critical patent/KR970010737B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)

Abstract

본 발명은 후면이 식각되는 기판 위에 하부전극을 형성하고 적외선 감지를 위한 강유전체 박막을 성장시킨 후 상부전극을 중착하여 형성된 센서위에 소자의 보호 및 멤브레인(막)의 안정화를 위해 폴리아미드막을 코팅하여 멤브레인 제작시 멤브레인 파괴를 방지하고 센서의 감도를 높일 수 있는 박막 적외선 센서 및 그 제조방법에 관한 것이다.The present invention forms a lower electrode on a substrate on which the back side is etched, grows a ferroelectric thin film for infrared sensing, and then deposits a polyamide film on the sensor formed by neutralizing the upper electrode to coat the polyamide film for the protection of the device and the stabilization of the membrane. The present invention relates to a thin-film infrared sensor and a method for manufacturing the same, which can prevent membrane breakage and increase the sensitivity of the sensor.

Description

박막 적외선 센서 및 그 제조방법Thin film infrared sensor and manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 실리콘기판을 이용한 본 발명 적외선 센서를 나타낸 단면도.2 is a cross-sectional view showing an infrared sensor of the present invention using a silicon substrate.

제3도는 MgO기판을 이용한 본 발명 적외선 센서를 나타낸 단면도.3 is a cross-sectional view showing an infrared sensor of the present invention using an MgO substrate.

Claims (2)

후면이 식각되는 기판 위에 하부전극을 형성하고 적외선 감지를 위한 강유전체 박막을 성장시킨 후 상부전극을 증착하여 형성된 센서위에 소자의 보호 및 멤브레인(막)의 안정화를 위해 폴리이미드막을 코팅하여 된 것을 특징으로 하는 박막 적외선센시.After forming the bottom electrode on the substrate on which the back side is etched and growing the ferroelectric thin film for infrared sensing, the polyimide film is coated on the sensor formed by depositing the top electrode to protect the device and stabilize the membrane (film). Thin-film infrared sensor. 전면에 P++-실리콘층이 형성된 후 양면에 절연막이 적층된 실리콘기판이나 MgO기판 위에 하부전극을 형성하는 하부전극 형성과정과, 상기 하부전극을 형성한 후 적외선 감지를 위한 강유전에 막을 성장하는 강유전체 박막 성장과정과, 상기 강유전체 박막을 성장한 후 상부전극을 증착하는 상부전극 증착과정과, 상기 상부전극이 증착된 기판 위에 폴리이미드층을 코팅하는 폴리이미드막 코팅과정과, 상기 폴리이미드 막을 코팅한 후 식각하여, 상·하부 전극의 콘택홀(Contact Hole)을 형성하는 홀 형성과정으로 이루어진 것을 특징으로 하는 박막 적외선 센서의 제조방법.After forming the P ++ -silicon layer on the front surface and the bottom electrode to form a lower electrode on the silicon substrate or MgO substrate with an insulating film on both sides, and after forming the lower electrode to grow a ferroelectric film for infrared sensing A process of growing a ferroelectric thin film, an upper electrode depositing process of depositing an upper electrode after growing the ferroelectric thin film, a process of coating a polyimide layer coating a polyimide layer on the substrate on which the upper electrode is deposited, and coating the polyimide film After etching, a method of manufacturing a thin film infrared sensor, characterized in that the hole forming process of forming a contact hole (Contact Hole) of the upper and lower electrodes. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930027475A 1993-12-13 1993-12-13 Thin film infrared sensor KR970010737B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930027475A KR970010737B1 (en) 1993-12-13 1993-12-13 Thin film infrared sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930027475A KR970010737B1 (en) 1993-12-13 1993-12-13 Thin film infrared sensor

Publications (2)

Publication Number Publication Date
KR950021704A true KR950021704A (en) 1995-07-26
KR970010737B1 KR970010737B1 (en) 1997-06-30

Family

ID=19370748

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930027475A KR970010737B1 (en) 1993-12-13 1993-12-13 Thin film infrared sensor

Country Status (1)

Country Link
KR (1) KR970010737B1 (en)

Also Published As

Publication number Publication date
KR970010737B1 (en) 1997-06-30

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