KR950021062A - Contact manufacturing method of semiconductor device - Google Patents

Contact manufacturing method of semiconductor device Download PDF

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Publication number
KR950021062A
KR950021062A KR1019930026884A KR930026884A KR950021062A KR 950021062 A KR950021062 A KR 950021062A KR 1019930026884 A KR1019930026884 A KR 1019930026884A KR 930026884 A KR930026884 A KR 930026884A KR 950021062 A KR950021062 A KR 950021062A
Authority
KR
South Korea
Prior art keywords
contact
semiconductor substrate
semiconductor device
forming
insulating film
Prior art date
Application number
KR1019930026884A
Other languages
Korean (ko)
Inventor
김승준
신기수
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930026884A priority Critical patent/KR950021062A/en
Publication of KR950021062A publication Critical patent/KR950021062A/en

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

본 발명은 반도체 장치의 콘택 제조방법에 관한 것으로서, 반도체 기판 상에 절연막을 형성한 후, 상기 반도체 기판의 콘택으로 예정된 부분이 노출되도록 절연막을 식각하여 콘택홀을 형성하고, 상기 콘택홀에 형성된 자연산화막과 표면 손상 부분을 쉬스 전압이 낮은 일랙트로 네가티브 가스 플라스마로 건식식각하여 제거하였으므로, 식각 이온들의 운동 에너지가 적어 콘택 표면의 손상이 방지되고, 콘택 내부로의 불순물 주입이 방지되어 소자동작의 신뢰성을 향상시킬 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a contact of a semiconductor device, wherein after forming an insulating film on a semiconductor substrate, the insulating film is etched to expose a predetermined portion of the contact of the semiconductor substrate to form a contact hole, and the natural formed in the contact hole. Since the oxide film and the damaged parts were removed by dry etching with a negative gas plasma with a low sheath voltage, the kinetic energy of the etching ions was reduced to prevent damage to the contact surface and to prevent the injection of impurities into the contacts, thereby ensuring reliable device operation. Can improve.

Description

반도체 장치의 콘택 제조방법Contact manufacturing method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도 (A)~(B)도는 본 발명에 따른 반도체 장치의 콘택 제조공정도.1A to 1B are contact manufacturing process diagrams of a semiconductor device according to the present invention.

Claims (3)

반도체 기판상에 절연막을 형성하는 공정과, 상기 반도체 기판의 콘택으로 예정된 부분 상의 절연막을 제거하여 콘택홀을 형성하는 공정과, 상기 콘택홀 형성시 손상된 노출되어 있는 반도체 기판의 표면을 일렉트로 네가티브 가스 플라스마로 소정 두께 건식식각하는 공정과, 상기 콘택홀을 메꾸어 상기 반도체 기판과 접촉되는 도전층을 형성하는 공정을 구비하는 반도체 장치의 콘택 제조 방법.Forming an insulating film on a semiconductor substrate; forming a contact hole by removing an insulating film on a portion intended to be a contact of the semiconductor substrate; and forming a surface of the exposed semiconductor substrate damaged during the formation of the contact hole. And a step of dry etching a predetermined thickness, and forming a conductive layer in contact with the semiconductor substrate by filling the contact hole. 제1항에 있어서, 상기 일렉트로 네가티브 가스로 SF6을 사용하는 것을 특징으로 하는 반도체 장치의 콘택 제조방법.The method of manufacturing a contact of a semiconductor device according to claim 1, wherein SF 6 is used as the electronegative gas. 제1항에 있어서, 상기 일렉트로 네가티브 가스에 Ar, O2또는 He 가스를 혼합하여 사용하는 것을 특징으로 하는 반도체 장치의 콘택 제조방법.The method of manufacturing a contact of a semiconductor device according to claim 1, wherein Ar, O 2 or He gas is mixed with the electro-negative gas. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930026884A 1993-12-08 1993-12-08 Contact manufacturing method of semiconductor device KR950021062A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930026884A KR950021062A (en) 1993-12-08 1993-12-08 Contact manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930026884A KR950021062A (en) 1993-12-08 1993-12-08 Contact manufacturing method of semiconductor device

Publications (1)

Publication Number Publication Date
KR950021062A true KR950021062A (en) 1995-07-26

Family

ID=66826646

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930026884A KR950021062A (en) 1993-12-08 1993-12-08 Contact manufacturing method of semiconductor device

Country Status (1)

Country Link
KR (1) KR950021062A (en)

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