KR950021062A - Contact manufacturing method of semiconductor device - Google Patents
Contact manufacturing method of semiconductor device Download PDFInfo
- Publication number
- KR950021062A KR950021062A KR1019930026884A KR930026884A KR950021062A KR 950021062 A KR950021062 A KR 950021062A KR 1019930026884 A KR1019930026884 A KR 1019930026884A KR 930026884 A KR930026884 A KR 930026884A KR 950021062 A KR950021062 A KR 950021062A
- Authority
- KR
- South Korea
- Prior art keywords
- contact
- semiconductor substrate
- semiconductor device
- forming
- insulating film
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
본 발명은 반도체 장치의 콘택 제조방법에 관한 것으로서, 반도체 기판 상에 절연막을 형성한 후, 상기 반도체 기판의 콘택으로 예정된 부분이 노출되도록 절연막을 식각하여 콘택홀을 형성하고, 상기 콘택홀에 형성된 자연산화막과 표면 손상 부분을 쉬스 전압이 낮은 일랙트로 네가티브 가스 플라스마로 건식식각하여 제거하였으므로, 식각 이온들의 운동 에너지가 적어 콘택 표면의 손상이 방지되고, 콘택 내부로의 불순물 주입이 방지되어 소자동작의 신뢰성을 향상시킬 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a contact of a semiconductor device, wherein after forming an insulating film on a semiconductor substrate, the insulating film is etched to expose a predetermined portion of the contact of the semiconductor substrate to form a contact hole, and the natural formed in the contact hole. Since the oxide film and the damaged parts were removed by dry etching with a negative gas plasma with a low sheath voltage, the kinetic energy of the etching ions was reduced to prevent damage to the contact surface and to prevent the injection of impurities into the contacts, thereby ensuring reliable device operation. Can improve.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도 (A)~(B)도는 본 발명에 따른 반도체 장치의 콘택 제조공정도.1A to 1B are contact manufacturing process diagrams of a semiconductor device according to the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930026884A KR950021062A (en) | 1993-12-08 | 1993-12-08 | Contact manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930026884A KR950021062A (en) | 1993-12-08 | 1993-12-08 | Contact manufacturing method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR950021062A true KR950021062A (en) | 1995-07-26 |
Family
ID=66826646
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930026884A KR950021062A (en) | 1993-12-08 | 1993-12-08 | Contact manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR950021062A (en) |
-
1993
- 1993-12-08 KR KR1019930026884A patent/KR950021062A/en not_active Application Discontinuation
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Legal Events
Date | Code | Title | Description |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |