KR950020982A - Collimator - Google Patents

Collimator Download PDF

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Publication number
KR950020982A
KR950020982A KR1019930027759A KR930027759A KR950020982A KR 950020982 A KR950020982 A KR 950020982A KR 1019930027759 A KR1019930027759 A KR 1019930027759A KR 930027759 A KR930027759 A KR 930027759A KR 950020982 A KR950020982 A KR 950020982A
Authority
KR
South Korea
Prior art keywords
collimator
hole
thin film
semiconductor device
metal thin
Prior art date
Application number
KR1019930027759A
Other languages
Korean (ko)
Other versions
KR970003828B1 (en
Inventor
김헌도
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930027759A priority Critical patent/KR970003828B1/en
Priority to JP6311930A priority patent/JP2648111B2/en
Publication of KR950020982A publication Critical patent/KR950020982A/en
Application granted granted Critical
Publication of KR970003828B1 publication Critical patent/KR970003828B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

본 발명은 반도체 소자의 금속박막을 증착하는 스퍼터링 공정에서 금속소오스인 타겟과 기판의 사이에 설치되는 콜리메이터에관한 것으로서, 금속소오스의 에로전 형태에 따라 하나의 콜리메이터 내에서 콜리메이터 홀의 구경과 높이의 비인 단차비를 각 부위별로 다르게 형성하였으므로 반도체 장치의 균일한 금속박막을 형성하여 단차피복성이 향상되므로 반도체 장치의 신뢰성이 향상되는 이점이 있다.The present invention relates to a collimator installed between a target and a substrate, which is a metal source, in a sputtering process for depositing a metal thin film of a semiconductor device. Since the step ratio is differently formed for each part, the uniform metal thin film of the semiconductor device is formed to increase the step coverage, thereby improving the reliability of the semiconductor device.

Description

콜리메이터Collimator

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제7도 내지 제12도는 본 발명에 따른 콜리메이터들의 단면도.7 to 12 are cross-sectional views of collimators according to the present invention.

Claims (3)

반도체소자의 금속박막을 증착하는 스프터링 공정에서 금속 소오스인 타겟과 기판 사이에 놓이는 콜리메이터에 있어서, 하나의 콜리메이터 내에 콜리메이터의 홀 직경에 대한 콜리메이터 홀의 높이의 비인 단차비가 각 부위별로 다르게 형성하여 반도체 장치의 균일한 금속박막을 형성할 수 있는 콜리메이터.In a collimator placed between a target that is a metal source and a substrate in a sputtering process of depositing a metal thin film of a semiconductor device, a step ratio, which is a ratio of the height of the collimator hole to the hole diameter of the collimator in one collimator, is formed differently for each region. A collimator capable of forming a uniform metal thin film. 제1항에 있어서, 상기 콜리메이터가 콜리메이터 홀의 높이는 고정하고 부위별 콜리메이터 직경을 변화시켜 콜리메이터 단차비를 조절하는 것을 특징으로하는 콜리메이터.The collimator of claim 1, wherein the collimator adjusts the collimator step ratio by fixing the height of the collimator hole and changing the collimator diameter for each part. 제1항에 있어서, 상기 콜리메이터가 콜리메이터 홀의 높이와 부위별 콜리메이터 홀의 직경을 동시에 변화시켜 콜리메이터 단차비를 조절하는 콜리메이터 제조방법.The method of claim 1, wherein the collimator adjusts the collimator step ratio by simultaneously changing the height of the collimator hole and the diameter of each collimator hole. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930027759A 1993-12-15 1993-12-15 Collimator KR970003828B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019930027759A KR970003828B1 (en) 1993-12-15 1993-12-15 Collimator
JP6311930A JP2648111B2 (en) 1993-12-15 1994-12-15 Collimator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930027759A KR970003828B1 (en) 1993-12-15 1993-12-15 Collimator

Publications (2)

Publication Number Publication Date
KR950020982A true KR950020982A (en) 1995-07-26
KR970003828B1 KR970003828B1 (en) 1997-03-22

Family

ID=19371011

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930027759A KR970003828B1 (en) 1993-12-15 1993-12-15 Collimator

Country Status (2)

Country Link
JP (1) JP2648111B2 (en)
KR (1) KR970003828B1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2749699B1 (en) * 1996-06-06 1998-10-16 Sopha Medical Vision Internati MULTIPLE FIELD COLLIMATOR AND MEDICAL IMAGING SYSTEM COMPRISING SUCH A COLLIMATOR
JP2007273490A (en) * 2004-03-30 2007-10-18 Renesas Technology Corp Method of manufacturing semiconductor integrated circuit device
CN101627146A (en) * 2007-01-02 2010-01-13 Oc欧瑞康巴尔斯公司 Method and device for carrying out said thereof with cathode sputtering fabrication direction layer
JP6364295B2 (en) * 2014-09-22 2018-07-25 ルネサスエレクトロニクス株式会社 Semiconductor device manufacturing method and sputtering apparatus
JP2018154880A (en) * 2017-03-17 2018-10-04 株式会社東芝 Collimator and processing device

Also Published As

Publication number Publication date
JP2648111B2 (en) 1997-08-27
JPH07307288A (en) 1995-11-21
KR970003828B1 (en) 1997-03-22

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