KR950015697A - Overlap Error Measuring Device - Google Patents

Overlap Error Measuring Device Download PDF

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Publication number
KR950015697A
KR950015697A KR1019930025363A KR930025363A KR950015697A KR 950015697 A KR950015697 A KR 950015697A KR 1019930025363 A KR1019930025363 A KR 1019930025363A KR 930025363 A KR930025363 A KR 930025363A KR 950015697 A KR950015697 A KR 950015697A
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KR
South Korea
Prior art keywords
pattern
light
inner box
measuring device
error measuring
Prior art date
Application number
KR1019930025363A
Other languages
Korean (ko)
Inventor
김근영
민영홍
김영식
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930025363A priority Critical patent/KR950015697A/en
Publication of KR950015697A publication Critical patent/KR950015697A/en

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  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

본 발명은 반도체 소자의 제조공정 중 포토리소그라피 (photolithography) 공정시 2개 이상의 마스크를 연속해서 노광할 경우 상호 중첩오차를 측정할 수 있는 중청오차 측정장치에 관한 것으로, 빛이 투과되는 영역이 형성하고자 하는 패턴 및 패턴간 간격의 두배인 외부박스(1")와 빛이 투과되지 못하는 영역이 형성하고자 하는 패턴보다 소정정도 크게 형성된 내부박스(4)를 구비한 하나의 마스크와; 빛이 투과되는 영역이 형성하고자 하는 패턴 및 패턴간 간격의 두배보다 소정정도 작게 형성된 외부박스(6)와 빛이 투과되지 못하는 영역이 형성하고자 하는 패턴과 동일한 크기로 형성된 내부박스(4)를 구비한 다른 하나의 마스크가 포개어진 구조를 이룸으로써 식각공정 없이 다중마스크의 중첩오차 측정이 가능하여 공정단순화 효과를 얻을 수 있다.The present invention relates to a heavy-duty error measuring device that can measure overlapping errors when two or more masks are continuously exposed during a photolithography process of a semiconductor device manufacturing process. A mask having an outer box 1 ", which is twice the distance between the pattern and the pattern, and an inner box 4 formed to a predetermined degree larger than the pattern to which light cannot be transmitted; Another mask having an outer box 6 formed to be smaller than the pattern to be formed and the distance between the patterns by a predetermined degree and an inner box 4 formed to have the same size as the pattern to which the light-permeable region is to be formed. By forming a superimposed structure, it is possible to measure overlapping errors of multiple masks without an etching process, thereby obtaining a process simplification effect.

Description

중첩오차 측정 장치Overlap Error Measuring Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3A도는 본 발명에 따른 외부박스 형성용 마스크 패턴도, 제3B도는 본 발명에 따른 내부박스 형성용 마스크 패턴도,Figure 3A is a mask pattern for forming the outer box according to the present invention, Figure 3B is a mask pattern for forming the inner box according to the present invention,

제4도는 본 발명의 중첩오차 측정 장치인 제3A도 및 제3B도의 박스를 이용하여 다중마스크 작업이 완료한 상태의 단면도.4 is a cross-sectional view of a state in which a multimask operation is completed using the boxes of FIGS. 3A and 3B, which are overlapping error measuring apparatuses of the present invention.

Claims (1)

반도체 소자의 제조공정 증 포토리소그라피 공정시 2개 이상의 마스크를 연속하여에 노광할 경우 상호 증첩오차를 측정할 수 있는 중청오차 측정장치에 있어서, 빛이 투과되는 영역이 형성하고자하는 패턴 및 패턴간 간격의 두 배인 외부박스(1")와 빛이 투과되지 못하는 영역이 형성하고자 하는 패턴보다 소정정도 크게 형성된 내부박스(4)를 구비한 하나의 마스크와; 빛이 투과되는 영역이 형성하고자 하는 패턴 및 패턴간 간격의 두배보다 소정정도 작게 형성된 외부박스(6)와 빛이 투과되지 못하는 영역이 형성하고자 하는 패턴과 동일한 크기로 형성된 내부박스(4)를 구비한 다른 하나의 마스크가 포개어진 것을 특징으로 하는 중첩오차 측정 장치.In the process of manufacturing semiconductor devices, in the heavy error measurement device that can measure mutual folding errors when two or more masks are exposed to each other during a photolithography process, a pattern and a gap between patterns to form a region through which light is transmitted. A mask having an outer box 1 "that is twice as large as an inner box and an inner box 4 formed to a predetermined extent larger than a pattern to which light cannot be transmitted; a pattern to be formed by a light transmitting area and Another mask having an outer box 6 formed to be smaller than twice the interval between patterns and an inner box 4 having the same size as the pattern to be formed by the region through which light cannot pass is superimposed. Overlapping error measuring device. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930025363A 1993-11-26 1993-11-26 Overlap Error Measuring Device KR950015697A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930025363A KR950015697A (en) 1993-11-26 1993-11-26 Overlap Error Measuring Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930025363A KR950015697A (en) 1993-11-26 1993-11-26 Overlap Error Measuring Device

Publications (1)

Publication Number Publication Date
KR950015697A true KR950015697A (en) 1995-06-17

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KR1019930025363A KR950015697A (en) 1993-11-26 1993-11-26 Overlap Error Measuring Device

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KR (1) KR950015697A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100356759B1 (en) * 1999-12-31 2002-10-18 아남반도체 주식회사 Method for 1st overlay measurement in an photo process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100356759B1 (en) * 1999-12-31 2002-10-18 아남반도체 주식회사 Method for 1st overlay measurement in an photo process

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