KR960002510A - Pattern superimposition measurement mark manufacturing method - Google Patents

Pattern superimposition measurement mark manufacturing method Download PDF

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Publication number
KR960002510A
KR960002510A KR1019940015433A KR19940015433A KR960002510A KR 960002510 A KR960002510 A KR 960002510A KR 1019940015433 A KR1019940015433 A KR 1019940015433A KR 19940015433 A KR19940015433 A KR 19940015433A KR 960002510 A KR960002510 A KR 960002510A
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KR
South Korea
Prior art keywords
pattern
manufacturing
box
measurement mark
arranged outside
Prior art date
Application number
KR1019940015433A
Other languages
Korean (ko)
Other versions
KR0146240B1 (en
Inventor
배상만
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940015433A priority Critical patent/KR0146240B1/en
Publication of KR960002510A publication Critical patent/KR960002510A/en
Application granted granted Critical
Publication of KR0146240B1 publication Critical patent/KR0146240B1/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

본 발명은 반도체 제조 공정중 리소그라피(Lithography) 제조시 패턴 중첩도 측정 마크 제조방법에 관한 것으로, 특히, 마스크 공정시 형성되는 패턴의 중첩도를 정확하고, 빠른 측정을 하기 위하여 컨트라스트가 다른 다층간의 패턴 중첩 측정마크의 컨트라스트 차를 완화시켜 측정시 패일(Fail)을 방지하는 패턴 중첩도 측정 마크 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a pattern overlap measurement mark during lithography manufacturing in a semiconductor manufacturing process. In particular, a pattern between layers having different contrasts in order to accurately and quickly measure the overlap between patterns formed during a mask process. The present invention relates to a method for manufacturing a pattern overlap measurement mark, which reduces a contrast difference between overlap measurement marks and prevents a fail during measurement.

Description

패턴 중첩도 측정 마크 제조방법Pattern superimposition measurement mark manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2A도 내지 제2D도는 본 발명에 따른 패턴 중첩도 측정 마크 제조방법을 도시한 도면.2A to 2D are views showing a method for manufacturing a pattern overlap measurement mark according to the present invention.

Claims (6)

반도체 소자 제조공정인 리소그라피 제조시 다층간 패턴 중첩도 측정 마크 제조방법에 있어서, 내측 패턴 박스의 외부로 배열되는 패턴을 수평축(X축), 종축(Y축)방향의 패턴을 서로 혼합한 패턴으로 형성하여 측정장비의 광학적 컨트라스트 차에 의한 실패를 방지하도록 한 것을 특징으로 하는 다층간 패턴 중첩도 측정 마크 제조방법.In the method for manufacturing a pattern overlap measurement measure between layers in the manufacturing of lithography, which is a semiconductor device manufacturing process, a pattern arranged in the outside of the inner pattern box as a pattern in which the patterns in the horizontal axis (X axis) and the vertical axis (Y axis) directions are mixed with each other. Formed pattern overlapping measurement mark manufacturing method, characterized in that formed to prevent failure due to the optical contrast difference of the measuring equipment. 제1항에 있어서, 내측 패턴 박스의 외부로 배열되는 패턴을 내측 패턴 박스의 변과 평행하게 배열하는 것을 특징으로 하는 다층간 패턴 중첩도 측정 마크 제조방법.The method of claim 1, wherein the pattern arranged outside the inner pattern box is arranged in parallel with the sides of the inner pattern box. 제1항에 있어서, 내측 패턴 박스의 외부로 배열되는 패턴을 내측 박스의 변과 평행하지 않은 형태로 배열하는 것을 특징으로 하는 다층간 패턴 중첩도 측정 마크 제조방법.The method according to claim 1, wherein the pattern arranged outside the inner pattern box is arranged in a form not parallel to the sides of the inner box. 제3항에 있어서, 내측 패턴 박스의 외부로 배열되는 패턴을 내측 패턴 박스의 변에 수직으로 향하도록 배열하는 것을 특징으로 하는 다층간 패턴 중첩도 측정 마크 제조방법.The method of manufacturing a mark according to claim 3, wherein the pattern arranged outside the inner pattern box is oriented perpendicular to the sides of the inner pattern box. 제3항 또는 제4항에 있어서, 내측 패턴 박스의 외부로 배열되는 두개의 패턴의 단부 길이가 서로 다르게 한 것을 특징으로 하는 다층간 패턴 중첩도 측정 마크 제조방법.The method for manufacturing a pattern overlap measurement mark according to claim 3 or 4, wherein the end lengths of the two patterns arranged outside the inner pattern box are different from each other. 제1항 또는 제3항에 있어서, 내측 패턴 박스의 외부로 배열되는 도트(dot)형태로 배열하는 것을 특징으로 하는 다층간 패턴 중첩도 측정 마크 제조방법.The method of manufacturing a mark according to claim 1 or 3, wherein the pattern overlapping degree between layers is arranged in a dot form arranged outside the inner pattern box. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940015433A 1994-06-30 1994-06-30 Method for manufacturing mark for measuring pattern convolution KR0146240B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940015433A KR0146240B1 (en) 1994-06-30 1994-06-30 Method for manufacturing mark for measuring pattern convolution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940015433A KR0146240B1 (en) 1994-06-30 1994-06-30 Method for manufacturing mark for measuring pattern convolution

Publications (2)

Publication Number Publication Date
KR960002510A true KR960002510A (en) 1996-01-26
KR0146240B1 KR0146240B1 (en) 1998-11-02

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940015433A KR0146240B1 (en) 1994-06-30 1994-06-30 Method for manufacturing mark for measuring pattern convolution

Country Status (1)

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KR (1) KR0146240B1 (en)

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Publication number Publication date
KR0146240B1 (en) 1998-11-02

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