KR950015688A - Etching end point detection method of dry etching equipment - Google Patents

Abstract

The present invention relates to a method for detecting an end point of etching of dry etching equipment, in order to prevent a process failure due to underetching or overetching of a film which is etched when etching and patterning a conductor layer or an insulating layer by dry etching. 1), the first and second electron beam source (2) (3), the controller (4), the digital signal processor (5), the first, second electron beam electrode (6) consisting of (7) first, 2 When the electron beam electrodes 6 and 7 are matched to the selected area of the film to be etched, the film to be etched by checking the current flowing through the ammeter 1 by irradiating an electron beam with different potentials to the film to be etched during the etching process. When the current becomes zero and when the film to be etched is an insulator, the time when the current starts to flow is detected as an etching end point, so that the exact etching end point can be detected, and the size of the electron beam can be reduced so that even when forming a fine pattern Etch end point It can be detected.

Description

Etching end point detection method of dry etching equipment

Since this is an open matter, no full text was included.

2 (A) to (C) are cross-sectional views for explaining the etching end point detection method of the present invention.

Claims (5)

An etching end point detecting device comprising an ammeter (1), first and second electron beam sources (2) (3), a controller (4), a digital signal processor (5), and first and second electron beam electrodes (6) and (7). In the method for detecting the etching end point by using, the selection of the exposed conductor 20 of the sample in which the conductor 20 is formed on the insulator 10 and the photosensitive film pattern 30 is selectively formed on the conductor 20. An ammeter is irradiated through a conductor 20 which is dry-etched by irradiating an electron beam output from the first and second electron beam electrodes 6 and 7 with different potentials of the first and second electron beam sources 2 and 3 in the region. An etching end point detection method of a dry etching apparatus, characterized in that for detecting the end point of the etching by checking the current flowing in (1) to detect the time point when the current becomes zero. The method of claim 1, wherein when the electron beam source is one, the probe end is connected to an electrode that is not connected to the electron beam source to contact a large area of the etched film, and the etching end point is detected by irradiating an electron beam to the other etching area. End point detection method of the dry etching equipment. 2. The insulator 10 of claim 1, wherein when the insulator 10 is patterned when the insulator 10 is formed on the conductor 20, the insulator 10 is irradiated with electron beams having different potentials to the selected region of the exposed insulator 10. ) Is etched, and when the electron beam is irradiated to the conductor (20), detecting the end point of the current flow in the ammeter (1) as the end point of etching as an etching end point. The method of claim 1, wherein the conductor 20 is aluminum (AI), tungsten (W), copper (Cu) or silicide (WSix, MoSix, TaSix, TiSix, CoSix), the etching of dry etching equipment, characterized in that the polysilicon Endpoint detection method. The method of claim 2, wherein the insulator (10) is characterized in that SiO ₂ , Si ₃ N ₄ , BPSG, PSG, TEOS. ※ Note: The disclosure is based on the initial application.