KR950015688A - Etching end point detection method of dry etching equipment - Google Patents
Etching end point detection method of dry etching equipment Download PDFInfo
- Publication number
- KR950015688A KR950015688A KR1019930024076A KR930024076A KR950015688A KR 950015688 A KR950015688 A KR 950015688A KR 1019930024076 A KR1019930024076 A KR 1019930024076A KR 930024076 A KR930024076 A KR 930024076A KR 950015688 A KR950015688 A KR 950015688A
- Authority
- KR
- South Korea
- Prior art keywords
- etching
- end point
- electron beam
- insulator
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000005530 etching Methods 0.000 title claims abstract description 16
- 238000001312 dry etching Methods 0.000 title claims abstract 6
- 238000001514 detection method Methods 0.000 title claims description 5
- 238000010894 electron beam technology Methods 0.000 claims abstract 15
- 239000004020 conductor Substances 0.000 claims abstract 8
- 239000012212 insulator Substances 0.000 claims abstract 8
- 238000000034 method Methods 0.000 claims abstract 7
- 230000001678 irradiating effect Effects 0.000 claims abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 239000000523 sample Substances 0.000 claims 2
- 229910019044 CoSix Inorganic materials 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 1
- 229910008486 TiSix Inorganic materials 0.000 claims 1
- 239000005380 borophosphosilicate glass Substances 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 238000000059 patterning Methods 0.000 abstract 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
본 발명은 건식식각장비의 식각종료점 검출방법에 관한 것으로 건식식각법으로 도체층 또는 절연층을 식각하여 패터닝할때 식각되는 막의 언더에치나 오버에치에 따른 공정의 실패를 방지하기 위하여, 전류계(1), 제1,2 전자빔소스(2) (3), 제어기(4), 디지탈신호처리기 (5), 제1, 2 전자빔전극(6) (7)으로 구성된 식각종료점 검출장치의 제1,2 전자빔전극(6) (7)을 식각되는 막의 선택영역에 맞추고 식각이 진행되는 동안 식각되는 막에 각기 전위가 다른 전자빔을 조사하여 전류계(1)에 흐르는 전류를 체크하여 식각되는 막이 도체인 경우 전류가 제로(Zero)가 되는 시점, 식각되는 막이 절연체인 경우 전류가 흐르기 시작하는 시점을 식각종료점으로 검출하여 정확한 식각종료점을 검출할 수 있고, 전자빔의 크기를 작게할 수 있어 미세패턴형성시에도 식각종료점을 검출할 수 있다.The present invention relates to a method for detecting an end point of etching of dry etching equipment, in order to prevent a process failure due to underetching or overetching of a film which is etched when etching and patterning a conductor layer or an insulating layer by dry etching. 1), the first and second electron beam source (2) (3), the controller (4), the digital signal processor (5), the first, second electron beam electrode (6) consisting of (7) first, 2 When the electron beam electrodes 6 and 7 are matched to the selected area of the film to be etched, the film to be etched by checking the current flowing through the ammeter 1 by irradiating an electron beam with different potentials to the film to be etched during the etching process. When the current becomes zero and when the film to be etched is an insulator, the time when the current starts to flow is detected as an etching end point, so that the exact etching end point can be detected, and the size of the electron beam can be reduced so that even when forming a fine pattern Etch end point It can be detected.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도 (A) 내지 (C)는 본 발명의 식각종료점 검출방법을 설명하기 위한 단면도.2 (A) to (C) are cross-sectional views for explaining the etching end point detection method of the present invention.
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930024076A KR950015688A (en) | 1993-11-12 | 1993-11-12 | Etching end point detection method of dry etching equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930024076A KR950015688A (en) | 1993-11-12 | 1993-11-12 | Etching end point detection method of dry etching equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
KR950015688A true KR950015688A (en) | 1995-06-17 |
Family
ID=66826237
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930024076A Ceased KR950015688A (en) | 1993-11-12 | 1993-11-12 | Etching end point detection method of dry etching equipment |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR950015688A (en) |
-
1993
- 1993-11-12 KR KR1019930024076A patent/KR950015688A/en not_active Ceased
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19931112 |
|
PG1501 | Laying open of application | ||
A201 | Request for examination | ||
PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 19971229 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 19931112 Comment text: Patent Application |
|
E902 | Notification of reason for refusal | ||
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20000215 Patent event code: PE09021S01D |
|
E601 | Decision to refuse application | ||
PE0601 | Decision on rejection of patent |
Patent event date: 20000630 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20000215 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |