KR950014989A - Photoresist coating method - Google Patents

Photoresist coating method Download PDF

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Publication number
KR950014989A
KR950014989A KR1019930023919A KR930023919A KR950014989A KR 950014989 A KR950014989 A KR 950014989A KR 1019930023919 A KR1019930023919 A KR 1019930023919A KR 930023919 A KR930023919 A KR 930023919A KR 950014989 A KR950014989 A KR 950014989A
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KR
South Korea
Prior art keywords
photoresist
reflectance
coating method
photoresist coating
thickness
Prior art date
Application number
KR1019930023919A
Other languages
Korean (ko)
Inventor
최동순
박치우
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930023919A priority Critical patent/KR950014989A/en
Publication of KR950014989A publication Critical patent/KR950014989A/en

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Abstract

본 발명은 반도체 제조공정중 포토레지스트를 도포하는 방법에 관한 것으로, 포토레지스트의 도포 두께에 따른 반사율(Reflectance)을 고려하여 포토레지스트를 도포하되, 반사율이 최저일 때 현상속도가 빠른 포토레지스트는 최저 반사율을 갖는 두께로 도포하고, 반사율이 최고일때 현상속도가 빠른 포토레지스트는 최고 반사율을 갖는 두께로 도포하여 현상속도를 향상시킬 수 있는 포토레지스트를 도포하는 방법에 관해 기술된다.The present invention relates to a method for applying a photoresist during the semiconductor manufacturing process, the photoresist is applied in consideration of the reflectance (Reflectance) according to the coating thickness of the photoresist, the fastest photoresist when the reflectance is the lowest A method of applying a photoresist that can be applied at a thickness having a reflectance, and a photoresist having a high development speed when the reflectance is the highest, can be applied at a thickness having the highest reflectance to improve the development speed.

Description

포토레지스트 도포방법Photoresist coating method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (1)

반도체 소자의 제조공정중 포토레지스트 도포방법에 있어서, 포토레지스트의 현상속도를 향상시키기 위해 포토레지스트의 최저 또는 최고의 반사율을 고려한 상태에서 포토레지스트의 두께를 조절하여 도포하는 것을 특징으로 하는 포토레지스트 도포방법.In the photoresist coating method of the semiconductor device manufacturing process, in order to improve the development speed of the photoresist, the photoresist coating method characterized in that the coating is adjusted by adjusting the thickness of the photoresist in consideration of the lowest or highest reflectance of the photoresist . ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930023919A 1993-11-11 1993-11-11 Photoresist coating method KR950014989A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930023919A KR950014989A (en) 1993-11-11 1993-11-11 Photoresist coating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930023919A KR950014989A (en) 1993-11-11 1993-11-11 Photoresist coating method

Publications (1)

Publication Number Publication Date
KR950014989A true KR950014989A (en) 1995-06-16

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ID=66824936

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930023919A KR950014989A (en) 1993-11-11 1993-11-11 Photoresist coating method

Country Status (1)

Country Link
KR (1) KR950014989A (en)

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