KR950013983A - 고온 필라멘트음극 직류방전에 의한 다이아몬드막 증착방법 - Google Patents

고온 필라멘트음극 직류방전에 의한 다이아몬드막 증착방법 Download PDF

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KR950013983A
KR950013983A KR1019930025529A KR930025529A KR950013983A KR 950013983 A KR950013983 A KR 950013983A KR 1019930025529 A KR1019930025529 A KR 1019930025529A KR 930025529 A KR930025529 A KR 930025529A KR 950013983 A KR950013983 A KR 950013983A
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South Korea
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diamond film
cathode
filament
direct current
current discharge
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KR1019930025529A
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KR960015961B1 (ko
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이욱성
백영준
은광용
이종수
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황해웅
국방과학연구소
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/271—Diamond only using hot filaments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/272—Diamond only using DC, AC or RF discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명은 고온 필라멘트음극 직류방전법을 이용한 다이아몬드막의 합성방법에 관한 것이다. 본 발명은 음극으로서 비표면적이 큰 나선 필라멘트를 사용하고, 이 나선 필라멘트 음극의 온도를 충분한 열전자 방출이 일어날 정도로 고온으로 유지시켜 직류글로우방전이 수십시간이상 안정되게 유지함으로써 증착속도 10~30㎛/h 이상의 높은 속도로 수백 ㎛ 내지 1mm 이상의 두께를 갖는 다이아몬드막을 합성한다. 본 발명의 방법에 의해 제조된 다이아몬드막은 증착된 상태 그대로 관찰하여도 가시광선을 투과하는 우수한 특성을 갖는다.

Description

고온 필라멘트음극 직류방전에 의한 다이아몬드막 증착방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 다이아몬드막 합성용 직류 글로우방전 증착장치에 대한 개략구조도.
제2도는 (a), (b)는 본 발명의 필라멘트음극 구조를 보인 사시도.
제3도는 필라멘트음극의 온도에 따른 직류방전 플라즈마의 형태차이를 보인 것으로,
(a)는 음극의 온도가 낮을 때이고,
(b)는 음극의 온도가 높을 때이다.
* 도면의 주요부분에 대한 부호의 설명
1 : 반응용기 2 : 음극
3 : 양극 4 : 진공펌프
5 : 원료가스 공급장치 7 : 음극홀더
8 : 직류전력 공급장치 9 : 기판
PC : 양광주

Claims (5)

  1. 마주보는 한쌍의 전극이 형성된 반응용기 내부로 반응가스를 공급하고 전극간에 직류전압을 인가하여 글로우-아크 천이 영역의 고밀도 직류방전을 발생시켜 반응가스를 분해, 여기함으로써 양극위의 기판에 다이아몬드막을 증착시키는 방법에 있어서, 음극을 나선 필라멘트로 형성하고, 이 필라멘트음극의 온도를 충분한 열전자방출이 이루어지는 고온으로 유지시켜 안정적인 직류방전이 지속되도록 한 것을 특징으로 하는 고온 필라멘트음극 직류방전에 의한 다이아몬드막 증착방법.
  2. 제l항에 있어서, 필라멘트는 직류방전에 의해 자체 가열되며 합성조건에서 수시간 유지하여 탄화시키는 것을 특징으로 하는 고온 필라멘트음극 직류방전에 의한 다이아몬드막 증착방법.
  3. 제1항에 있어서, 필라멘트는 고융점 금속재 도선에 의해 음극홀더에 매달린 상태로 지지되는 것을 특징으로 하는 고온 필라멘트음극 직류방전에 의한 다이몬드막 증착방법.
  4. 제1항에 있어서, 필라멘트의 수는 한개 또는 그 이상이고, 재질은 텅스텐, 탄탈륨등의 고융점금속인 것을 특징으로 하는 고온 필라멘트음극 직류방전에 의한 다이아몬드막 증착방법.
  5. 제1항에 있어서, 필라멘트음극의 온도를 2000∼2600℃로 유지시킴을 특징으로 고온 필라멘트음극 직류방전에 의한 다이아몬드막 증착방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930025529A 1993-11-27 1993-11-27 고온 필라멘트음극 직류방전에 의한 다이아몬드막 증착방법 KR960015961B1 (ko)

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KR1019930025529A KR960015961B1 (ko) 1993-11-27 1993-11-27 고온 필라멘트음극 직류방전에 의한 다이아몬드막 증착방법

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KR1019930025529A KR960015961B1 (ko) 1993-11-27 1993-11-27 고온 필라멘트음극 직류방전에 의한 다이아몬드막 증착방법

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KR950013983A true KR950013983A (ko) 1995-06-15
KR960015961B1 KR960015961B1 (ko) 1996-11-25

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