KR950012789A - Electroluminescent element and manufacturing method thereof - Google Patents

Electroluminescent element and manufacturing method thereof Download PDF

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Publication number
KR950012789A
KR950012789A KR1019930022914A KR930022914A KR950012789A KR 950012789 A KR950012789 A KR 950012789A KR 1019930022914 A KR1019930022914 A KR 1019930022914A KR 930022914 A KR930022914 A KR 930022914A KR 950012789 A KR950012789 A KR 950012789A
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KR
South Korea
Prior art keywords
insulating film
light
lower electrode
forming
fluorescent layer
Prior art date
Application number
KR1019930022914A
Other languages
Korean (ko)
Other versions
KR970003851B1 (en
Inventor
이은영
배형균
Original Assignee
이헌조
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019930022914A priority Critical patent/KR970003851B1/en
Priority to US08/285,928 priority patent/US5491378A/en
Publication of KR950012789A publication Critical patent/KR950012789A/en
Application granted granted Critical
Publication of KR970003851B1 publication Critical patent/KR970003851B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

본 발명은 전계 발광소자 및 그 제조방법에 관한 것으로, 종래의 전계발광소자는 형광층에서 빛이 발생한 경우 표시소자로 사용되는 부분, 즉 투명전극측으로 방출되는 빛의 양은 적고 나머지 빛의 양은 사방으로 방출되므로 발광휘도가 약한 뿐만 아니라 투명 전극 이외의 부분으로 방출된 빛은 다른 픽셀(pixel)에 영향을 주어 소자의 콘트라스트(Contrast)를 저하시키게 된다. 본 발명은 이러한 문제를 해결하기 위하여 하부전극인 금속전극을 패터닝한 후 양극산화하여 이를 요철(凹)형태로 형상화하여 형광층에서 발광된 빛이 측면발광은 되지 않고 한쪽방향, 즉 투명전극쪽으로만 방출되게 함으로써 높은 발광휘도를 얻도록 하고, 동시에 소자의 콘트라스트(Comtrast)를 향상시키도록 한 것이다.The present invention relates to an electroluminescent device and a method for manufacturing the same. In the conventional electroluminescent device, when light is generated in a fluorescent layer, a portion used as a display device, that is, a small amount of light emitted to the transparent electrode side and the remaining light amount is everywhere. As it is emitted, not only the light emission luminance is weak, but the light emitted to a portion other than the transparent electrode affects other pixels, thereby reducing the contrast of the device. In order to solve this problem, the present invention is to pattern the metal electrode, which is a lower electrode, and then anodize and shape it into a concave-convex shape so that the light emitted from the fluorescent layer does not emit side-side light. By emitting the light, high luminance is obtained, and at the same time, the contrast of the device is improved.

Description

전계발광소자 및 그 제조방법Electroluminescent element and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제5도는 본 발명 전계발광소자의 입체사시도.5 is a three-dimensional perspective view of the electroluminescent device of the present invention.

제6도는 (가) 내지 (마)는 본 발명 전계발광소자의 제조공정도.6 (a) to (e) are manufacturing process diagrams of the electroluminescent device of the present invention.

Claims (5)

기판 위에 하부전극패턴을 형성하는 공정과, 상기 하부전극의 표면을 양극산화하여 절연막을 형성하는 공정과, 상기 하부전극을 에칭하는 공정과, 상기소자의 전면에 제1절연막을 형성하는 공정과, 상기 제1절연막 위에 형광층을 형성한 후, 화 소부분만을 제외하고 에칭하는 공정과, 상기 소자의 전면에 제2절연막을 형성하는 공정과, 상기 제2절연막 위에 투명전극을 형성하는 공정으로 이루어지는 것을 특징으로 하는 전계발광소자 제조방법.Forming a lower electrode pattern on a substrate, forming an insulating film by anodizing the surface of the lower electrode, etching the lower electrode, forming a first insulating film on the entire surface of the device; Forming a fluorescent layer on the first insulating film, and then etching only the pixel portion, forming a second insulating film on the entire surface of the device, and forming a transparent electrode on the second insulating film. Electroluminescent device manufacturing method characterized in that. 제1항에 있어서, 하부전극 에칭공정은 하부전극을 요철(凹) 형태로 형성하는 것을 특징으로 하는 전계발광소자 제조방법.The method of claim 1, wherein the lower electrode etching process forms the lower electrode in an uneven form. 기판 상에 하부전극과 절연막을 차례로 형성하고, 상기 소자의 전면에 제1절연막을 형성하며, 상기 제1절연막 위의 중앙에 형광층을 형성하고, 상기 소자의 전면에 제2절연막을 형성하고, 이 제2절연막 위에 투명전극이 형성되어 구성되는 것을 특징으로 하는 전계발광소자.A lower electrode and an insulating film are sequentially formed on the substrate, a first insulating film is formed on the entire surface of the device, a fluorescent layer is formed on the center of the first insulating film, and a second insulating film is formed on the entire surface of the device, And a transparent electrode formed on the second insulating film. 제3항에 있어서, 하부전극은 요철(凹) 모양으로 형성되는 것을 특징으로 하는 전계발광소자.The electroluminescent device according to claim 3, wherein the lower electrode is formed in an uneven shape. 제3항에 있어서, 절연막은 하부전극의 가장자리 위와 측면에 형성되는 것을 특징으로 하는 전계발광소자.The electroluminescent device according to claim 3, wherein the insulating film is formed on the side and the side of the lower electrode. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930022914A 1993-09-07 1993-10-30 Method of manufacturing and electric luminescence device KR970003851B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019930022914A KR970003851B1 (en) 1993-10-30 1993-10-30 Method of manufacturing and electric luminescence device
US08/285,928 US5491378A (en) 1993-09-07 1994-08-04 Electro luminescence device and method for fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930022914A KR970003851B1 (en) 1993-10-30 1993-10-30 Method of manufacturing and electric luminescence device

Publications (2)

Publication Number Publication Date
KR950012789A true KR950012789A (en) 1995-05-17
KR970003851B1 KR970003851B1 (en) 1997-03-22

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Application Number Title Priority Date Filing Date
KR1019930022914A KR970003851B1 (en) 1993-09-07 1993-10-30 Method of manufacturing and electric luminescence device

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KR (1) KR970003851B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100477104B1 (en) * 2002-05-08 2005-03-18 삼성에스디아이 주식회사 Flat Panel Display with Improved emitting efficiency

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100477104B1 (en) * 2002-05-08 2005-03-18 삼성에스디아이 주식회사 Flat Panel Display with Improved emitting efficiency

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Publication number Publication date
KR970003851B1 (en) 1997-03-22

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