KR950007650A - Electroluminescent Device Manufacturing Method - Google Patents

Electroluminescent Device Manufacturing Method Download PDF

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Publication number
KR950007650A
KR950007650A KR1019930017923A KR930017923A KR950007650A KR 950007650 A KR950007650 A KR 950007650A KR 1019930017923 A KR1019930017923 A KR 1019930017923A KR 930017923 A KR930017923 A KR 930017923A KR 950007650 A KR950007650 A KR 950007650A
Authority
KR
South Korea
Prior art keywords
light
electroluminescent device
emitting layer
light emitting
present
Prior art date
Application number
KR1019930017923A
Other languages
Korean (ko)
Other versions
KR970004496B1 (en
Inventor
이은영
배형균
Original Assignee
이헌조
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019930017923A priority Critical patent/KR970004496B1/en
Priority to US08/285,928 priority patent/US5491378A/en
Publication of KR950007650A publication Critical patent/KR950007650A/en
Application granted granted Critical
Publication of KR970004496B1 publication Critical patent/KR970004496B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

본 발명은 전계 발광소자의 제조방법에 관한 것으로, 종래에는 전계 발광소자에 전압을 인가하면 발광층으로부터 사방으로 빛이 방출되는데 이때 표시소자로 사용되는 투명전극 측으로 방출되는 빛의 양이 적어 실제의 발광 휘도는 너무 약하며, 또한 표시소자측으로 발출되는 빛 이외의 광은 다른 픽셀(Pixel)에 영향을 주어 소자의 콘트라스트(Contrast)를 저하시키는 문제점이 있었다. 본 발명은 이러한 문제점을 해결하기 위하여 발광층의 측면으로 발생하는 광을 차단시키는 광산란막(절연층/금속막)을 발광층 양측에 형성하여 측면으로 방출되는 광을 투명 전극 측으로 유도함으로써 보다 높은 발광휘도를 얻도록 함과 아울러 각 픽셀의 콘트라스트(Contrast)를 좋게 하는 전계 발광소자의 제조방법을 창안한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an electroluminescent device. In the related art, when a voltage is applied to an electroluminescent device, light is emitted from all directions from the light emitting layer. The luminance is too weak, and light other than the light emitted to the display element side affects other pixels, thereby lowering the contrast of the element. In order to solve this problem, the present invention forms a light scattering film (insulating layer / metal film) that blocks light generated from the side of the light emitting layer on both sides of the light emitting layer to induce light emitted from the side toward the transparent electrode, thereby achieving higher luminance. In addition, the present invention devised a method of manufacturing an electroluminescent device which improves the contrast of each pixel.

Description

전계 발광소자 제조방법Electroluminescent Device Manufacturing Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명 전계 발광소자의 평면 구조도,3 is a plan view of the electroluminescent device of the present invention;

제4도는 본 발명 전계 발광소자의 (A-A')단면 구조도,4 is a cross-sectional structure diagram (A-A ') of the electroluminescent device of the present invention;

제5도의 (가)에서 (마)는 제4도에 대한 제조 공정도.(A) to (e) of FIG. 5 is a manufacturing process diagram for FIG.

Claims (2)

기판 위에 투명전극과 제1절연막을 형성하는 단계와, 금속막을 증착한 후 화소단위로 격자무늬형태가 되도록 금속막을 에칭하는 단계와, 상기 금속막 표면에 절연층을 형성하는 단계와, 상기 소자위에 발광층을 형성한후 금속막 위의 발광층만을 제거하는 단계와, 제2절연막과 상부전극을 차례로 형성하는 단계로 이루어지는 전계 발광소자 제조방법.Forming a transparent electrode and a first insulating film on the substrate, etching the metal film to form a lattice pattern on a pixel-by-pixel basis after depositing the metal film, and forming an insulating layer on the surface of the metal film; And removing only the light emitting layer on the metal film after forming the light emitting layer, and sequentially forming the second insulating film and the upper electrode. 제1항에 있어서, 상기 절연층은 상기 알루미늄(A1)을 양극산화하여 형성하는 것을 특징으로 하는 전계 발광소자 제조방법.The method of claim 1, wherein the insulating layer is formed by anodizing the aluminum (A1). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930017923A 1993-09-07 1993-09-07 A method for manufacture for electric luminecence device KR970004496B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019930017923A KR970004496B1 (en) 1993-09-07 1993-09-07 A method for manufacture for electric luminecence device
US08/285,928 US5491378A (en) 1993-09-07 1994-08-04 Electro luminescence device and method for fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930017923A KR970004496B1 (en) 1993-09-07 1993-09-07 A method for manufacture for electric luminecence device

Publications (2)

Publication Number Publication Date
KR950007650A true KR950007650A (en) 1995-04-15
KR970004496B1 KR970004496B1 (en) 1997-03-28

Family

ID=19363067

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930017923A KR970004496B1 (en) 1993-09-07 1993-09-07 A method for manufacture for electric luminecence device

Country Status (1)

Country Link
KR (1) KR970004496B1 (en)

Also Published As

Publication number Publication date
KR970004496B1 (en) 1997-03-28

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