KR950012765A - Structure of Pixel Element of Liquid Crystal Display Device and Manufacturing Method Thereof - Google Patents

Structure of Pixel Element of Liquid Crystal Display Device and Manufacturing Method Thereof Download PDF

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Publication number
KR950012765A
KR950012765A KR1019930021364A KR930021364A KR950012765A KR 950012765 A KR950012765 A KR 950012765A KR 1019930021364 A KR1019930021364 A KR 1019930021364A KR 930021364 A KR930021364 A KR 930021364A KR 950012765 A KR950012765 A KR 950012765A
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South Korea
Prior art keywords
liquid crystal
node
pixel element
display device
predetermined
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KR1019930021364A
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Korean (ko)
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KR970000471B1 (en
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한민구
민병혁
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한민구
민병혁
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)

Abstract

본 발명은 액정디스플레이에서 특히 화소(pixel)소자의 구조 및 그 제조방법에 관한 것으로, 본 발명은 소정의 전압이 인가되는 게이트단자와 소정의 데이타신호가 입력되는 드레인단자와 소정의 노드에 접속되는 소오스단자를 가지고 공통의 전류통로를 가지는 2개의 스위칭트랜지스터와, 상기 소오스단자와 소정의 전극 노드사이에 전극의 양단이 접속되고 산화막에 의해 감싸인 구조를 가지는 스토리지캐패시터로 이루어지는 화소소자를 개시하고 있다. 이로부터 본 발명은 LCD에 있어서 TFT 트랜지스터를 채용하는 통상의 화소소 자의 동일한 점유면적을 가지면서도 전류구동능력과 캐패시턴스의 용량이 증가하는 화소소자를 제공함에 의해, 액정노드로 되는 소오스노드에 전류의 차아지시간이 고속으로 되는 장점이 있다. 또한 통상의 모오스공정을 통해 점유면적의 증가없이 종래대비 적어도 2배의 캐패시턴스를 확보할 수 있는 잇점이 발생되며, 아울러 향후 동일기판상의 레이아웃을 용이하게 하는 효과가 발생한다. 또한 이러한 잇점들이 용이한 제조공정을 통해서 달성되는 효과가 있다. 또한 LCD의 틈간비율을 감소시키지 않고서도 기생캐패시턴스의 영향 을 최대 억제할 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a pixel element and a method of manufacturing the same in a liquid crystal display. The present invention relates to a gate terminal to which a predetermined voltage is applied, a drain terminal to which a predetermined data signal is input, and a predetermined node. Disclosed is a pixel element comprising two switching transistors having a source terminal and a common current path, and a storage capacitor having a structure in which both ends of the electrode are connected between the source terminal and a predetermined electrode node and surrounded by an oxide film. . From this, the present invention provides a pixel element having the same occupied area of an ordinary pixel element employing a TFT transistor in an LCD while increasing current driving capability and capacitance capacity, thereby providing current to a source node serving as a liquid crystal node. There is an advantage that the charge time is high speed. In addition, the conventional Morse process has the advantage of ensuring at least twice the capacitance compared to the conventional without increasing the occupied area, and also has the effect of facilitating the layout on the same substrate in the future. In addition, there is an effect that these advantages are achieved through an easy manufacturing process. In addition, the parasitic capacitance can be minimized without reducing the gap ratio of the LCD.

Description

액정디스플레이장치의 화소소자의 구조 및 그 제조방법Structure of Pixel Element of Liquid Crystal Display Device and Manufacturing Method Thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제4도는 제4a도 내지 제4d도 내지 제4d도로 구성되며,4 is composed of FIGS. 4a to 4d to 4d,

제4a도는 내지 제4d도는 본 발명에 의한 스위칭 트랜지스터의 제조방법을 보여주는 공정도,4a to 4d is a process chart showing a manufacturing method of a switching transistor according to the present invention,

제5도는 제5a도 내지 제5d도로 구성되며, 제5a도는 본 발명에 의한 스토리지캐패시터의 제조방법을 보여주는 공정도.5 is a view 5a to 5d, Figure 5a is a process chart showing a manufacturing method of a storage capacitor according to the present invention.

Claims (4)

소정의 액성노드로 되는 소오스노드를 표함하는 화소소자에 의해 화면표시가 이루어지는 액정디스플레이장치에 있어서, 상기 화소소자가, 소정의 전압공급윈과 접속하는 전압라인과, 상기 전압라인에 제어접속되고 소정의 데이타라인과 상기 액정노드사이에 전류통로가 형성되는 제1스위칭트랜지스터와, 상기 전압라인에 제어 접속되고 상기 데이타라인과 책정노드사이에 전류 통로가 형성되는 제2스위칭트랜지스터를 구비함을 특징으로 하는 액정 디스플레이 장치.A liquid crystal display device in which screen display is performed by a pixel element representing a source node that becomes a predetermined liquid node, wherein the pixel element is controlled connected to a voltage line connected to a predetermined voltage supply window, and to the voltage line. And a first switching transistor having a current path formed between the data line and the liquid crystal node, and a second switching transistor controlled connected to the voltage line and having a current path formed between the data line and the predetermined node. Liquid crystal display device. 제1항에 있어서, 상기 화소소자가, 소정의 전극노드와 상기 액정노드사이에 전극의 양단이 접속되는 스토리지캐패시터를 더 구비함을 특징으로 하는 액정디스플레이 장치.The liquid crystal display device according to claim 1, wherein the pixel element further comprises a storage capacitor connected between both ends of a predetermined electrode node and the liquid crystal node. 박막트랜지스터를 화소소자로 사용하는 액정디스플레이장치에 있어서, 상기 박막틀내지스터가, 게이트 전극과, 상기 게이트전극의 일측방향에 위치하고 제1도전형으로 형성되는 드레인영역과, 상기 게이트전극의 타측방향에 위치하고 상기 제 1 도전형으로 형성되는 드레인영역과, 상기 게이트전극의 하측방향에 형성되는 제1전류통로와, 상기 게이트전극의 상측방향에 형성되는 제2전류통로를 포함하여 이루어짐을 특징으로 하는 액정디스플레이장치.A liquid crystal display device using a thin film transistor as a pixel element, wherein the thin film frame resistor is a gate electrode, a drain region formed in one direction of the gate electrode and formed in a first conductive type, and the other direction of the gate electrode. And a drain region formed at the first conductivity type, a first current path formed in a lower direction of the gate electrode, and a second current path formed in an upper direction of the gate electrode. LCD display device. 소정의 액정노드와 접속하는 박막트랜지스터를 포함하는 화소소자에 의해 화면표시가 이루어지는 액정디스플레이장치의 화소소자제조방법에 있어서, 상기 박막트랜지스터가, 기판상에 비도핑된 제1다결정실리콘을 적층하고 이를 한정식각하여 제1채널과 소오스와 드레인을 형성하는 제1공정과, 상기 제1채널의 상부면에 게이트전극을 적층하여 형성하는 제2공정과, 상기 게이트전극의 측벽을 둘러싸는 절연막 스페이서를 형성하고 기판전면에 제2다결성 실리콘을 소정두께로 증착하는 제3공정과, 상기 적층형성된 상기 제2다결정실리콘의 부위중 상기 게이트전극의 상부에 이온주입하여 제2채널을 형성하는 제4공정을 구비함을 특징으로 하는 액정디스플레이장치의 화소소자 제조방법.A pixel device manufacturing method of a liquid crystal display device in which screen display is performed by a pixel device including a thin film transistor connected to a predetermined liquid crystal node, wherein the thin film transistor stacks undoped first polycrystalline silicon on a substrate. Forming a first channel, a source, and a drain by limited etching; a second process of forming a gate electrode stacked on an upper surface of the first channel; and forming an insulating layer spacer surrounding sidewalls of the gate electrode. And a third step of depositing a second polysilicon layer on a surface of the substrate to a predetermined thickness, and a fourth step of ion implanting an upper portion of the gate electrode in the portion of the stacked second polycrystalline silicon to form a second channel. A method of manufacturing a pixel element of a liquid crystal display device, characterized in that provided. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930021364A 1993-10-14 1993-10-14 A new thin film transistor structure for increasing storage capacitance in the pixel element KR970000471B1 (en)

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KR1019930021364A KR970000471B1 (en) 1993-10-14 1993-10-14 A new thin film transistor structure for increasing storage capacitance in the pixel element

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100418999B1 (en) * 2001-10-22 2004-02-14 삼화페인트공업주식회사 Acrylic resin composition for preventing the resin decomposition by ultraviolet and acrylic paint using the composition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100418999B1 (en) * 2001-10-22 2004-02-14 삼화페인트공업주식회사 Acrylic resin composition for preventing the resin decomposition by ultraviolet and acrylic paint using the composition

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