KR950006991A

KR950006991A - Contact hole formation method of semiconductor device

Info

Publication number: KR950006991A
Application number: KR1019930016626A
Authority: KR
Inventors: 정의삼; 김경진; 이병석; 윤용혁
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1993-08-25
Filing date: 1993-08-25
Publication date: 1995-03-21

Abstract

본 발명은 반도체 소자의 제조공정중 초미세 콘택을 안정적으로 형성할 수 있는 경사식각에 의한 반도체 소자의 콘택홀 형성방법에 관한 것으로, 전도층(1)상에 절연막(2), 콘택 마스크 패턴(3)이 차례로 형성되어 상가 전도층(1)과 콘택을 이루기 위한 반도체 소자의 콘택홀 형성방법에 있어서, 상기 콘택 마스크 패턴(3)을 사용하여 콘택홀 형성부위의 절연막(2)을 소정부위 습식 식각하여 제거하는 단계; 상기 콘택 마스크 패턴(3)에 폴리머를 형성하면서 상기 절연막(2)을 경사지게 형성하는 단계; 상기 콘택부위의 절연막(2)을 소정부위 식각하여 전도막(1)이 드러나도록 하는 단계를 포함하여 이루어짐으로써 새로운 장비 또는 추가공정없이 향상된 스탭커버리지 특성을 갖는 미세 콘택홀을 안정적으로 형성할 수 있는 효과를 얻을 수 있다.The present invention relates to a method for forming a contact hole of a semiconductor device by an inclined etching that can stably form an ultra-fine contact in the manufacturing process of the semiconductor device, the insulating film 2, the contact mask pattern ( In the method for forming a contact hole of a semiconductor device in which 3) is sequentially formed to make contact with the malleable conductive layer 1, the contact mask pattern 3 is used to wet the insulating film 2 at the contact hole forming portion. Etching to remove; Forming the insulating film 2 inclined while forming a polymer on the contact mask pattern 3; Etching the insulating portion 2 of the contact portion to expose the conductive layer 1, thereby stably forming a fine contact hole having improved step coverage characteristics without new equipment or additional processes. The effect can be obtained.

Description

Contact hole formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A도 내지 제2D도는 본 발명에 따른 콘택홀 형성 공정 단면도.2A to 2D are cross-sectional views of a contact hole forming process according to the present invention.

제2E도는 본 발명에 따라 형성된 콘택홀 상부에 금속막을 형성한 단면도.2E is a cross-sectional view of a metal film formed over the contact hole formed in accordance with the present invention.

제3도는 본 발명에 따른 콘택홀 형성을 위한 경사 식각의 식각도에 따른 콘택홀 크기를 나타내는 그래프.3 is a graph showing the contact hole size according to the etching degree of the inclined etching for forming the contact hole according to the present invention.

Claims

In the method for forming a contact hole of a semiconductor device for forming an insulating film (2), a contact mask pattern (3) on the conductive layer (1) in order to make contact with the conductive layer (1), the contact mask pattern (3) Removing the insulating film 2 on the contact hole forming region by wet etching a predetermined portion using a predetermined region; Forming the insulating film 2 inclined while forming a polymer on the contact mask pattern 3; And etching the predetermined portion of the insulating portion (2) of the contact portion to expose the conductive layer (1).

2. The method of claim 1, wherein the process condition for the inclined etching is 70 to 110 mT, 500 to 700 Watts, 60 to 80 Gauss, 50 to 150 sccm CHF ₃ , and 0 to 10 sccm O ₂ .

※ Note: The disclosure is based on the initial application.