KR950006981A - Photoresist pattern formation method - Google Patents

Photoresist pattern formation method Download PDF

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Publication number
KR950006981A
KR950006981A KR1019930016127A KR930016127A KR950006981A KR 950006981 A KR950006981 A KR 950006981A KR 1019930016127 A KR1019930016127 A KR 1019930016127A KR 930016127 A KR930016127 A KR 930016127A KR 950006981 A KR950006981 A KR 950006981A
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KR
South Korea
Prior art keywords
photoresist
inorganic material
forming
material layer
layer
Prior art date
Application number
KR1019930016127A
Other languages
Korean (ko)
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KR970007438B1 (en
Inventor
박성환
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR93016127A priority Critical patent/KR970007438B1/en
Publication of KR950006981A publication Critical patent/KR950006981A/en
Application granted granted Critical
Publication of KR970007438B1 publication Critical patent/KR970007438B1/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

Abstract

본 발명은 포토레지스트패턴 형성방법에 관한 것으로, 종래 단일층의 포토레지스트에 의한 패터닝공정시의 포토레지스트의 식각선택비가 낮음으로 인한 문제점들을 해결하기 위해 기판상에 패터닝하고자 하는 층을 형성하는 단계와, 상기 패터닝하고자 하는 층위에 포토레지스트를 도포하는 단계, 상기 포토레지스트상에 무기물질층을 형성하는 단계, 상기 무기물질층 표면에 불순물을 도핑하는 단계, 소정의 포토마스크를 이용힌 노광공정에 의해 상기 무기물질층 표면에 선택적으로 불용성 복합체를 형성하는 단계, 현상공정을 거쳐 노광되지 않은 무기물질층 및 포토레지스트를 선택적으로 제거하는 단계로 이루어지는 패턴형성 방법을 제공함으로써, 포토레지스트이 해상력을 향상시킨다.The present invention relates to a method of forming a photoresist pattern, comprising the steps of forming a layer to be patterned on a substrate in order to solve the problems caused by low etching selectivity of the photoresist in the conventional patterning process by a single layer photoresist; Applying a photoresist on the layer to be patterned, forming an inorganic material layer on the photoresist, doping impurities on the surface of the inorganic material layer, and exposing the photoresist using a predetermined photomask. By providing a pattern forming method comprising selectively forming an insoluble composite on the surface of the inorganic material layer, and selectively removing the unexposed inorganic material layer and the photoresist through a developing process, the photoresist improves the resolution.

Description

포토레지스트패턴 형성방법Photoresist pattern formation method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 포토레지스트패턴 형성방법을 도시한 공정순서도.2 is a process flowchart showing a method of forming a photoresist pattern of the present invention.

Claims (3)

기판(1)상에 패터닝하고자 하는 층(2)을 형성하는 단계와, 상기 패터닝하고자 하는 층(2)위에 포토레지스트(3)를 도포하는 단계, 상기 포토레지스트(3)상에 무기물질층(4)을 형성하는 단계, 상기 무기물질(4) 표면에 불순물을 도핑하는 단계, 소정의 포토마스크를 이용한 노광공정에 의해 상기 무기물질층(4) 표면에 선택적으로 불용성 복합체를 형성하는 단계, 현상공정을 거쳐 노광되지 않은 무기물질층(4) 및 포토레지스트(3)를 선택적으로 제거하는 단계를 포함하는 이루어지는 것을 특징으로 하는 포토레지스트패턴 형성방법.Forming a layer 2 to be patterned on the substrate 1, applying a photoresist 3 to the layer 2 to be patterned, and forming an inorganic material layer on the photoresist 3. 4) forming, doping impurities on the surface of the inorganic material (4), selectively forming an insoluble composite on the surface of the inorganic material layer 4 by an exposure process using a predetermined photomask, development And selectively removing the inorganic material layer (4) and the photoresist (3) which are not exposed through the process. 제1항에 있어서, 무기물질층 (4)은 AS2, S3을 800∼100Å의 두께로 증착하여 형성함을 특징으로 하는 포토레지스트패턴 형성방법.The method of claim 1, wherein the inorganic material layer (4) is formed by depositing AS 2 , S 3 to a thickness of 800 to 100 GPa. 제1항에 있어서, 무기물질층 (4) 표면에 불순물을 도핑하는 단계는 AgNO2용액에 담그는 (Dipping)처리를 하여 Ag+이온을 도핑하는 공정과, Ag+를 이온주입하는 공정 중 어느 한 공정에 의해 행해지는 것을 특징으로 하는 포토레지스트패턴 형성방법.The method of claim 1, wherein the step of doping impurities on the surface of the inorganic material layer (4) is any one of a step of doping Ag + ions by dipping in an AgNO 2 solution, and a step of ion implantation of Ag + A method of forming a photoresist pattern, which is carried out by a step. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR93016127A 1993-08-19 1993-08-19 Photoresist pattern formation process KR970007438B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR93016127A KR970007438B1 (en) 1993-08-19 1993-08-19 Photoresist pattern formation process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR93016127A KR970007438B1 (en) 1993-08-19 1993-08-19 Photoresist pattern formation process

Publications (2)

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KR950006981A true KR950006981A (en) 1995-03-21
KR970007438B1 KR970007438B1 (en) 1997-05-08

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Application Number Title Priority Date Filing Date
KR93016127A KR970007438B1 (en) 1993-08-19 1993-08-19 Photoresist pattern formation process

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100312049B1 (en) * 1998-05-25 2001-11-03 가네꼬 히사시 Patterning method in semiconductor device fabricating process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100312049B1 (en) * 1998-05-25 2001-11-03 가네꼬 히사시 Patterning method in semiconductor device fabricating process

Also Published As

Publication number Publication date
KR970007438B1 (en) 1997-05-08

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