KR950005951A - 적외여기(赤外勵起) 발광체 - Google Patents

적외여기(赤外勵起) 발광체 Download PDF

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Publication number
KR950005951A
KR950005951A KR1019940019691A KR19940019691A KR950005951A KR 950005951 A KR950005951 A KR 950005951A KR 1019940019691 A KR1019940019691 A KR 1019940019691A KR 19940019691 A KR19940019691 A KR 19940019691A KR 950005951 A KR950005951 A KR 950005951A
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South Korea
Prior art keywords
infrared
light
rare earth
excitation light
infrared excitation
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KR1019940019691A
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쇼오지 이시와타
에쯔지 키무라
미치히로 타나카
야수히로 하나우에
왕유후
시노부 나가하마
나루히토 사와노보리
Original Assignee
아키모토 유우미
미쯔비시 마테리알 카부시키가이샤
수미타 마사토시
카부시키가이샤 수미타코오가쿠글라스
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Publication of KR950005951A publication Critical patent/KR950005951A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1688—Stoichiometric laser compounds, i.e. in which the active element forms one component of a stoichiometric formula rather than being merely a dopant
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7704—Halogenides
    • C09K11/7705—Halogenides with alkali or alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7772—Halogenides
    • C09K11/7773—Halogenides with alkali or alkaline earth metal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/02—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/62—Whiskers or needles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Luminescent Compositions (AREA)
  • Lasers (AREA)
  • Glass Compositions (AREA)

Abstract

본 발명의 적외여기발광체는, 일반식 R1xR2(1-x)BazCl3-2z(여기서, R1은 희토류원소, 0.01〈x1, R2는 R1이외의 희토류원소, 1〈z〈4)으로 표시되는 적외여기발광체에 있어서, 바람직하게는 회토류이온의 흡수파장영역을 제외한 400∼1500㎚의 파장영역에서 투과율이 70%이상인 투명결정이다.
상기한 발광체는, 적외광을 청색으로부터 녹색파장영역의 가시광으로 변환할 수가 있고, 광변환효율이 높고, 또한 투명체이므로 레이져광의 발진소자로서 사용할 수가 있어서, 적외레이져광을 여기원으로 한 컴팩트한 실용성이 높은 반도체가시광레이저를 실현할 수 있다. 또, 광전다이오우드의 광변환필터나 적외다이오우드에 있어서 가시광으로의 광변환소자 등의 용도가 기대될 수 있고, 또한 적외선검지나 광학증폭기 등에도 응용할 수가 있다.

Description

적외여기(赤外勵起)발광체
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 실시예1의 화합물의 X선회절도,
제2도는 실시예2의 화합물의 X선회절도,
제3도는 실시예1의 화합물의 결정구조를 나타내는 입체모식도.

Claims (7)

  1. 하기의 일반식
    R1xR2(1-x)BazCl3+2z
    (여기서, R1은 회토류원소, 0.01〈x1, R2는 R1이외의 회토류원소, 1〈x??1, R2는 R1이외의 회토류원소, 1〈z〈4)으로 표시되는 적외여기발광체
  2. 제1항에 있어서, 상기한 일반식의 z가 실질적으로 z=2이고, 희토류이온의 흡수파장영역을 제외한 400∼1500㎚의 파장영역에서 투과율이 70%이상인 적외여기발광체.
  3. 제2항에 있어서, R1이 Er, Tm, Ho, Nd 또는 Pr에서 선택되는 1종 또는 2종 이상의 희토류원소인 적외여기발광체.
  4. 제2항에 있어서, R2가 Yb, Gd, Y, Lu, Ce 또는 La에서 선택되는 1종 또는 2종 이상의 희토류원소인 적외여기발광체.
  5. 제2항에 있어서, R1이 Er, Tm, 또는 Ho이고, x=1인 적외여기발광체.
  6. 제2항에 있어서, R1이 Er, Tm, 또는 Ho이고, R2가 Yb 또는 Gd이며, R1과 R2의 합계량이 1인 적외여기발광체.
  7. 제2항에 있어서, R1이 Er, Tm이고, R2가 Yb 또는 Gd이며, R1과 R2의 합계량이 1인 적외여기발광체.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940019691A 1993-08-06 1994-08-06 적외여기(赤外勵起) 발광체 KR950005951A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP93-214935 1993-08-06
JP21493593 1993-08-06

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KR950005951A true KR950005951A (ko) 1995-03-20

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US (1) US5439616A (ko)
EP (1) EP0637861A1 (ko)
KR (1) KR950005951A (ko)
CN (1) CN1101928A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100743023B1 (ko) * 2001-07-31 2007-07-26 주식회사 포스코 유속저항기 클리닝 장치

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19836813A1 (de) 1998-08-14 2000-02-24 Bundesdruckerei Gmbh Wert- und Sicherheitsdokument mit optisch anregbaren Farbstoffen zur Echtheitsprüfung
WO2005067889A1 (en) 2003-12-30 2005-07-28 Durect Corporation Polymeric implants, preferably containing a mixture of peg and plg, for controlled release of active agents, preferably a gnrh
US8299436B2 (en) * 2005-06-29 2012-10-30 General Electric Company High energy resolution scintillators having high light output
US20080011953A1 (en) * 2006-07-11 2008-01-17 General Electric Company Scintillator composition, article, and associated method
US9404036B2 (en) * 2007-10-30 2016-08-02 The Regents Of The University Of California Alkali metal and alkali earth metal gadolinium halide scintillators
US8506478B2 (en) * 2008-06-04 2013-08-13 Fujifilm Corporation Illumination device for use in endoscope
JP5216429B2 (ja) * 2008-06-13 2013-06-19 富士フイルム株式会社 光源装置および内視鏡装置
CN103695002B (zh) * 2013-12-26 2016-03-30 有研稀土新材料股份有限公司 无机闪烁材料

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JPS5919594B2 (ja) * 1977-03-14 1984-05-07 株式会社東芝 螢光体
EP0021342B1 (en) * 1979-06-19 1983-04-13 Kasei Optonix, Ltd. Phosphor
GB2143248B (en) * 1983-05-31 1986-06-11 Toshiba Kk Rare earth oxyfluoride barium fluoride halide phosphor
US5198679A (en) * 1984-11-16 1993-03-30 Fuji Photo Film Co., Ltd. Phosphor and image storage panel
US5098813A (en) * 1987-07-13 1992-03-24 Konica Corporation Processes for preparing stimulable-phosphor radiation image storage panel using specified heat or heat and activator-containing gas treatment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100743023B1 (ko) * 2001-07-31 2007-07-26 주식회사 포스코 유속저항기 클리닝 장치

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CN1101928A (zh) 1995-04-26
EP0637861A1 (en) 1995-02-08

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