KR950005096Y1 - Vacuum sensor protecting apparatus of semiconductor apparatus - Google Patents
Vacuum sensor protecting apparatus of semiconductor apparatusInfo
- Publication number
- KR950005096Y1 KR950005096Y1 KR2019910012700U KR910012700U KR950005096Y1 KR 950005096 Y1 KR950005096 Y1 KR 950005096Y1 KR 2019910012700 U KR2019910012700 U KR 2019910012700U KR 910012700 U KR910012700 U KR 910012700U KR 950005096 Y1 KR950005096 Y1 KR 950005096Y1
- Authority
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- South Korea
- Prior art keywords
- vacuum
- vacuum sensor
- valve
- sensor
- chamber
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
내용 없음.No content.
Description
제 1 도는 본 고안 장치의 구성도.1 is a block diagram of the device of the present invention.
제 2 도는 본 고안 장치의 진공센서 인입구 개폐상태도.Figure 2 is a vacuum sensor inlet opening and closing state of the device of the present invention.
제 3 도는 종래장치의 구성도.3 is a block diagram of a conventional apparatus.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 챔버 3 : 진공배관1: Chamber 3: Vacuum piping
4 : 게이트밸브 5 : 진공센서4 gate valve 5 vacuum sensor
7 : 보호밸브 8 : 구동제어용 트랜지스터7: protective valve 8: drive control transistor
9 : 솔레노이드 밸브9: solenoid valve
본 고안은 반도체 장비내의 진공상태를 측정하기 위해 설치되는 진공센서를 보호하기 위한 반도체 장비의 진공센서 보호장치에 관한 것이다.The present invention relates to a vacuum sensor protection device for semiconductor equipment for protecting a vacuum sensor installed to measure the vacuum state in the semiconductor equipment.
일반적으로, 반도체 장비, 예를 들어 LPCVD장비나 드라이 에치(Dry etch)장비는 제 3 도에 도시한 바와 같이 챔버(1) 및 진공펌프(2)단에 공정중 챔버(1)내의 진공도를 측정하기 위해 감지부가 얇은 막 형태로 된 정전센서(Mano Meter)나 열전자 방출을 이용하는 써모 커플 게이지(Thermo Couple Gauge) 또는 피라니 게이지(Pirani Gauge)나 이온발생 및 전달도를 이용한 센서등을 설치하게 되는데, 이러한 센서나 게이지들은 예민하게 제작되어 있어 오염에 따라 그 감도가 급격히 저하되는 특성을 가지고 있다.Generally, semiconductor equipment such as LPCVD equipment or dry etch equipment measures the degree of vacuum in the chamber 1 during the process at the stage of the chamber 1 and the vacuum pump 2 as shown in FIG. To do this, the detector is installed with a thin film-type electrostatic sensor (Mano Meter), a thermo couple gauge using thermal electron emission or a Pirani gauge or a sensor using ion generation and transmission. These sensors and gauges are sensitively manufactured, and their sensitivity decreases rapidly due to contamination.
종래에는 상기한 바와 같이 챔버(1)내의 진공도를 측정하기 위해 설치되는 진공센서(5)가 항상 진공배관(3)과 통하여지도록 개방되어 있어 가스가 가스 인입구(10)를 통해 챔버(1)로 인입되어 진공펌프(2)를 통해 배출될 때 인입가스중에 포함된 파우더나 오일퓸(Oil fume), 기타 미반응 가스 오염물로부터 진공센서(5)가 오염되므로 감도가 저하되는 결점이 있었다.Conventionally, as described above, the vacuum sensor 5, which is installed to measure the degree of vacuum in the chamber 1, is always open so as to pass through the vacuum pipe 3 so that the gas flows into the chamber 1 through the gas inlet 10. When the vacuum sensor 5 is contaminated from powder, oil fume, and other unreacted gas contaminants contained in the incoming gas when the gas is introduced and discharged through the vacuum pump 2, the sensitivity is deteriorated.
본 고안은 종래의 이와 같은 결점을 해결하기 위해 안출한 것으로서, 챔버내의 진공도를 측정해야 되는 시간이 길지 않음을 감안하여 잔여시간 동안에는 진공센서의 인입부를 폐쇄시켜 진공센서를 기타 오염물로부터 오염되는 것을 미연에 방지할 수 있도록 하는데 그 목적이 있다.The present invention was devised to solve such a drawback of the prior art, and in view of the fact that the time to measure the vacuum degree in the chamber is not long, the inlet of the vacuum sensor is closed for the remaining time. The purpose is to help prevent.
상기 목적을 달성하기 위한 본 고안 형태에 따르면, 챔버와 게이트 밸브를 연결하는 진공배상관에 진공센서를 설치하도록 된 것에 있어서, 진공배관과 진공센서사이에 보호밸브를 설치하여 게이트 밸브의 개폐전후에 보호밸브가 개폐될 수 있도록 하여서 된 반도체 장비의 진공센서 보호장치가 제공된다.According to the present invention for achieving the above object, in that the vacuum sensor is installed in the vacuum distribution pipe connecting the chamber and the gate valve, by installing a protective valve between the vacuum pipe and the vacuum sensor before and after opening and closing the gate valve A vacuum sensor protection device for semiconductor equipment is provided, which allows the protection valve to be opened and closed.
이하 본 고안을 일실시예로 도시한 첨부된 도면 제 1 도 내지 제 2 도를 참고로 하여 더욱 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in more detail with reference to FIGS. 1 to 2 of the accompanying drawings.
첨부도면 제 1 도는 본 고안 장치의 구성도이고, 제 2 도는 진공센서 인입구 개폐상태도로서, 챔버(1)와 진공펌프(2)사이에 연결된 진공배관(3)상이 인입가스의 이송을 제어하기 위한 게이트밸브(4)가 설치되어 있고 게이트 밸브(4)의 상하방에는 진공배관(3)내의 진공도를 측정하기 위한 진공센서(5)(6)가 각각 설치되어 있다.1 is a block diagram of a device of the present invention, and FIG. 2 is a state diagram of a vacuum sensor inlet opening and closing state, for controlling the transfer of incoming gas on a vacuum pipe 3 connected between the chamber 1 and the vacuum pump 2. The gate valve 4 is provided, and the vacuum sensors 5 and 6 for measuring the degree of vacuum in the vacuum pipe 3 are provided above and below the gate valve 4, respectively.
그중 게이트 밸브(4)의 상부에 설치된 진공센서(5)와 진공배관(3) 사이에는 진공센서(5)의 인입구를 개폐시키기 위한 보호밸브(7)가 설치되어 있으며 보호밸브(7)는 구동제어용 트랜지스터(8)에 의해 구동되는 솔레노이드 밸브(9)로 제어되도록 되어 있다.Among them, a protective valve (7) for opening and closing the inlet of the vacuum sensor (5) is provided between the vacuum sensor (5) and the vacuum pipe (3) installed on the upper portion of the gate valve (4), the protective valve (7) is driven It is controlled by the solenoid valve 9 driven by the control transistor 8.
이때 보호밸브(7)는 솔레노이드 밸브(9)에 의해 게이트 밸브(4) 개폐전후에 개폐된다.At this time, the protection valve 7 is opened and closed before and after opening and closing the gate valve 4 by the solenoid valve (9).
이는 진공센서(5)가 게이트 밸브(4) 개방전에 진공배관(3)과 상호통하여져 인입가스중에 포함된 오염물로부터 오염되는 것을 방지하기 위함이다.This is to prevent the vacuum sensor 5 from being contaminated with contaminants contained in the incoming gas by communicating with the vacuum pipe 3 before opening the gate valve 4.
이와같이 구성된 본 고안의 작용효과를 설명하면 다음과 같다.Referring to the effect of the present invention configured as described above are as follows.
먼저 챔버(1)내를 진공화시키기 위해 진공도를 측정이 필요한 시간을 프로그램에 입력을 시키면 제 2 도에 도시한 바와 같이 프로그램에 의해 게이트 밸브(4)가 개방되기 직전에 콘트롤 전압에 의해 구동제어용 트랜지스터(8)를 통해 솔레노이드 밸브(9)에 24VDC전원이 인가된다.First, when a time is required to measure the degree of vacuum to evacuate the inside of the chamber 1, the program is inputted, and as shown in FIG. 2, the drive voltage is controlled by the control voltage immediately before the gate valve 4 is opened by the program. 24VDC power is applied to the solenoid valve 9 via the transistor 8.
이에 따라 솔레노이드 밸브(9)에 자장이 형성되어 보호밸브(7)를 개방시키게 되어 압축공기가 보호밸브(7)를 통해 진공센서(5)로 인입되므로 진공센서의 감지부에서 간접적으로 공정이 진행되는 챔버(1) 내부의 압력을 파악할 수 있게 된다.Accordingly, the magnetic field is formed in the solenoid valve 9 to open the protective valve 7 so that the compressed air is introduced into the vacuum sensor 5 through the protective valve 7 so that the process is indirectly performed at the sensing part of the vacuum sensor. It becomes possible to grasp the pressure inside the chamber 1 to be.
이와같이 공정진행전에 보호밸브(7)가 개방되어 챔버(1)내의 진공도를 파악하다가 공정이 완료되어 게이트 밸브(4)가 닫힌 후 일정시간이 경과되면 입력된 프로그램에 의해 구동제어용 트랜지스터(8)의 제어전압을 제어하게 되므로 솔레노이드 밸브(4)에 의해 보호밸브(7)는 폐쇄된다.As described above, when the protection valve 7 is opened before the process proceeds to determine the degree of vacuum in the chamber 1, and the process is completed and the gate valve 4 is closed, a predetermined time elapses. Since the control voltage is controlled, the protective valve 7 is closed by the solenoid valve 4.
따라서 압축공기는 진공센서(5)의 내부로 유입되지 않으며, 게이트 밸브(4)가 폐쇄된 상태에서는 파우다성 파티클(Particle) 및 오일품등도 진공센서(5)로 유입되지 않는다.Therefore, compressed air does not flow into the vacuum sensor 5, and powder particles, oils, and the like do not flow into the vacuum sensor 5 when the gate valve 4 is closed.
이상에서와 같이 본 고안 장치는 진공배관(3)과 진공센서(5) 사이에 솔레노이드 밸브(9)에 의해 구동되는 보호밸브(7)를 설치하는 간단한 구조에 의해 게이트 밸브(4)의 개방전에 진공센서(5)로 각종 오염물이 유입되는 것을 차단시킬 수 있게 되므로 진공센서(5)의 수명을 연장시킬 수 있게 됨은 물론 동일 진공센서의 장기적인 사용으로 인해 공정의 안정화를 기대할 수 있게 되는 효과를 가지게 된다.As described above, the device of the present invention has a simple structure in which a protective valve 7 driven by a solenoid valve 9 is installed between the vacuum pipe 3 and the vacuum sensor 5 before the opening of the gate valve 4. Since it is possible to block various contaminants from being introduced into the vacuum sensor 5, the life of the vacuum sensor 5 can be extended, and the stabilization of the process can be expected due to the long-term use of the same vacuum sensor. do.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2019910012700U KR950005096Y1 (en) | 1991-08-09 | 1991-08-09 | Vacuum sensor protecting apparatus of semiconductor apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2019910012700U KR950005096Y1 (en) | 1991-08-09 | 1991-08-09 | Vacuum sensor protecting apparatus of semiconductor apparatus |
Publications (2)
Publication Number | Publication Date |
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KR930005658U KR930005658U (en) | 1993-03-22 |
KR950005096Y1 true KR950005096Y1 (en) | 1995-06-22 |
Family
ID=19317728
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR2019910012700U KR950005096Y1 (en) | 1991-08-09 | 1991-08-09 | Vacuum sensor protecting apparatus of semiconductor apparatus |
Country Status (1)
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KR (1) | KR950005096Y1 (en) |
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1991
- 1991-08-09 KR KR2019910012700U patent/KR950005096Y1/en not_active IP Right Cessation
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KR930005658U (en) | 1993-03-22 |
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