KR950004593A - Thin film transistor using double gate - Google Patents

Thin film transistor using double gate Download PDF

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Publication number
KR950004593A
KR950004593A KR1019930013942A KR930013942A KR950004593A KR 950004593 A KR950004593 A KR 950004593A KR 1019930013942 A KR1019930013942 A KR 1019930013942A KR 930013942 A KR930013942 A KR 930013942A KR 950004593 A KR950004593 A KR 950004593A
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KR
South Korea
Prior art keywords
thin film
film transistor
gate
gate electrode
double gate
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KR1019930013942A
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Korean (ko)
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KR100302999B1 (en
Inventor
한창욱
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이헌조
주식회사 금성사
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Priority to KR1019930013942A priority Critical patent/KR100302999B1/en
Publication of KR950004593A publication Critical patent/KR950004593A/en
Application granted granted Critical
Publication of KR100302999B1 publication Critical patent/KR100302999B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

본 발명은 이중게이트를 이용한 박막트랜지스터에 관한 것으로, 일반적인 이중게이트를 이용한 박막트랜지스터는 상부게이트전극이 하부게이트전극을 따로 형성하게 되어 공정수가 많아지고, 상부게이트 금속을 양극산화하여 형성되는 절연막이 To2O5계로 형성되므로 양질의 절연특성을 갖는 막을 얻기 어려운 단점이 있다. 본 발명은 이러한 문제점을 해결하기 위하여 게이트형성 금속으로 알루미늄(A1)/알루미늄-탄탈(A1-Ta)을 증착하여 이를 한번의 식각공정에 의해 메사형태의 게이트전극을 형성하므로 공정을 단순화할 수 있으며, 게이트산화막을 (A1-Ta)Ox계로 형성하여 절연특성을 향상시킬 수 있도록 하는 이중게이트를 이용한 박막트랜지스터를 창안한 것이다.The present invention relates to a thin film transistor using a double gate, in the general thin film transistor using a double gate, the upper gate electrode is formed separately from the lower gate electrode, the number of steps is increased, the insulating film formed by anodizing the upper gate metal Since it is formed of a 2 O 5 system, it is difficult to obtain a film having good insulating properties. In order to solve this problem, the present invention can simplify the process by depositing aluminum (A1) / aluminum-tantalum (A1-Ta) with a gate forming metal to form a mesa gate electrode by one etching process. In addition, a thin film transistor using a double gate is formed to form a gate oxide layer based on (A1-Ta) Ox to improve insulation characteristics.

Description

이중게이트를 이용한 박막트랜지스터Thin film transistor using double gate

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 3 도는 본 발명 이중게이트를 이용한 박막트랜지스터의 단면 구조도.3 is a cross-sectional structure diagram of a thin film transistor using the double gate of the present invention.

Claims (5)

금속이 연속 적층되어 게이트전극을 형성하는 박막트랜지스터에 있어서, 상기 게이트전극은 상,하부 금속이 일정한 경사를 갖는 메사(Mesa)형태로 나란히 적층되어 구성되는 것을 특징으로 하는 이중게이트를 이용한 박막트랜지스터.A thin film transistor in which metal is continuously stacked to form a gate electrode, wherein the gate electrode is formed by stacking upper and lower metals side by side in a mesa shape having a predetermined inclination. 제 1 항에 있어서, 게이트전극은 한번의 식각공정을 통해 형성되는 것을 특징으로 하는 이중게이트를 이용한 박막트랜지스터.The thin film transistor of claim 1, wherein the gate electrode is formed through one etching process. 제 1 항 또는 제 2 항에 있어서, 게이트전극의 식각액으로 묽은 불산(HF)이 사용되는 것을 특징으로 하는 이중게이트를 이용한 박막트랜지스터.The thin film transistor according to claim 1 or 2, wherein dilute hydrofluoric acid (HF) is used as an etching solution of the gate electrode. 제 1 항에 있어서, 하부게이트 금속은 알루미늄(A1)이 사용되고, 상부게이트 금속은 알루미늄-탄탈(A1-Ta)이 사용되는 것을 특징으로 하는 이중게이트를 이용한 박막트랜지스터.The thin film transistor of claim 1, wherein the lower gate metal is aluminum (A1), and the upper gate metal is aluminum-tantalum (A1-Ta). 제 4 항에 있어서, 상부게이트 금속의 식각비를 하부게이트 금속의 식각비보다 빠르게 하는 것을 특징으로 하는 이중게이트를 이용한 박막트랜지스터.The thin film transistor of claim 4, wherein the etching ratio of the upper gate metal is faster than that of the lower gate metal. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930013942A 1993-07-22 1993-07-22 Thin film transistor using double gate KR100302999B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930013942A KR100302999B1 (en) 1993-07-22 1993-07-22 Thin film transistor using double gate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930013942A KR100302999B1 (en) 1993-07-22 1993-07-22 Thin film transistor using double gate

Publications (2)

Publication Number Publication Date
KR950004593A true KR950004593A (en) 1995-02-18
KR100302999B1 KR100302999B1 (en) 2001-12-15

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6333518B1 (en) 1997-08-26 2001-12-25 Lg Electronics Inc. Thin-film transistor and method of making same
US6340610B1 (en) 1997-03-04 2002-01-22 Lg. Philips Lcd Co., Ltd Thin-film transistor and method of making same
KR100430950B1 (en) * 1998-09-01 2004-06-16 엘지.필립스 엘시디 주식회사 Thin film transistor and its manufacturing method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000003756A (en) * 1998-06-29 2000-01-25 김영환 Thin film transistor and method thereof

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6340610B1 (en) 1997-03-04 2002-01-22 Lg. Philips Lcd Co., Ltd Thin-film transistor and method of making same
US6548829B2 (en) 1997-03-04 2003-04-15 Lg Lcd Inc. Thin-film transistor
US6815321B2 (en) 1997-03-04 2004-11-09 Lg. Philips Lcd Co., Ltd. Thin-film transistor and method of making same
USRE45579E1 (en) 1997-03-04 2015-06-23 Lg Display Co., Ltd. Thin-film transistor and method of making same
USRE45841E1 (en) 1997-03-04 2016-01-12 Lg Display Co., Ltd. Thin-film transistor and method of making same
US6333518B1 (en) 1997-08-26 2001-12-25 Lg Electronics Inc. Thin-film transistor and method of making same
US6573127B2 (en) 1997-08-26 2003-06-03 Lg Electronics Inc. Thin-film transistor and method of making same
KR100430950B1 (en) * 1998-09-01 2004-06-16 엘지.필립스 엘시디 주식회사 Thin film transistor and its manufacturing method

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