KR950003922A - Contaminant Reduction Method by Controlling Photoresist Coating Speed - Google Patents

Contaminant Reduction Method by Controlling Photoresist Coating Speed Download PDF

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Publication number
KR950003922A
KR950003922A KR1019930012453A KR930012453A KR950003922A KR 950003922 A KR950003922 A KR 950003922A KR 1019930012453 A KR1019930012453 A KR 1019930012453A KR 930012453 A KR930012453 A KR 930012453A KR 950003922 A KR950003922 A KR 950003922A
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KR
South Korea
Prior art keywords
speed
rpm
acceleration
seconds
rotating
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Application number
KR1019930012453A
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Korean (ko)
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KR970007435B1 (en
Inventor
최동순
최현묵
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019930012453A priority Critical patent/KR970007435B1/en
Publication of KR950003922A publication Critical patent/KR950003922A/en
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Publication of KR970007435B1 publication Critical patent/KR970007435B1/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

본 발명은 포토레지스트 도포속도 조절에 의한 오염입자 감소 방법에 관한 것으로, 1000 내지 3000rpm의 속도, 5000 내지 15000rpm의 가속도로 3 내지 8초간 웨이퍼를 회전시키는 제1단계, 1000 내지 3000rpm의 속도, 5000 내지 15000rpm의 가속도로 2 내지 5초간 회전시키면서 포토레지스트를 도포하는 제2단계, 고속, 고가속도로 단시간 회전시키는 제3단계, 2500 내지 4500rpm의 고속, 15000 내지 25000rpm의 가속도로 10 내지 20초간 회전시켜 막 두께를 조정하는 제4단계 및 1000 내지 3000rpm의 속도, 15000 내지 25000rpm의 가속도로 3 내지 8초간 회전시켜 웨이퍼 모서리 부분에 불균하게 도포된 도포레지스트를 스트립하는 제5단계를 포함하여 이루어져 포토레지스트 분사 rpm을 추가 진행함으로써 오염도 측정장비 (Surfscan machine)로 표면측정시 방사선 형태의 오염입자 흡착을 감소시키고, 균일한 두께의 포토레지스트막을 형성할 수 있는 효과가 있다.The present invention relates to a method for reducing contaminants by controlling the photoresist coating speed, the first step of rotating the wafer for 3 to 8 seconds at a speed of 1000 to 3000 rpm, an acceleration of 5000 to 15000 rpm, a speed of 1000 to 3000 rpm, 5000 to The second step of applying the photoresist while rotating for 2 to 5 seconds with an acceleration of 15000rpm, the third step for short time rotation at high speed and high acceleration, the high speed of 2500 to 4500rpm, the rotation of 10 to 20 seconds at an acceleration of 15000 to 25000rpm A fourth step of adjusting the thickness and a fifth step of stripping the coating resist applied unevenly to the edge of the wafer by rotating for 3 to 8 seconds at a speed of 1000 to 3000 rpm and an acceleration of 15000 to 25000 rpm. By further reducing the concentration of radioactive particles in the surface measurement with a surface scan machine , It is capable of forming a film photoresist having a uniform thickness effect.

Description

포토레지스트 도포속도 조절에 의한 오염입자 감소방법Contaminant Reduction Method by Controlling Photoresist Coating Speed

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 종래방법에 따른 포토레지스트 도포시 공정조건도, 제2도는 본 발명의 일 실시예에 따른 포토레지스트 도포시 공정조건도.1 is a process condition diagram when applying a photoresist according to the conventional method, Figure 2 is a process condition diagram when applying a photoresist according to an embodiment of the present invention.

Claims (2)

포토레지스트 도포속도 조절에 의한 오염입자 감소방법에 있어서, 1000 내지 3000rpm의 속도, 5000 내지 15000rpm의 가속도로 3 내지 8초간 웨이퍼를 회전시키는 제1단계, 1000 내지 3000rpm의 속도, 5000 내지 15000rpm의 가속도로 2 내지 5초간 회전시키면서 포토레지스트를 도포하는 제2단계, 고속, 고가속도로 단시간 회전시키는 제3단계, 2500 내지 4500rpm의 고속, 15000 내지 25000rpm의 가속도로 10 내지 20초간 회전시켜 막 두께를 조정하는 제4단계 및 1000 내지 3000rpm의 속도, 15000 내지 25000rpm의 가속도로 3 내지 8초간 회전시켜 웨이퍼 모서리 부분에 불균일하게 도포된 포토레지스트를 스트립하는 제5단계를 포함하여 이루어지는 것을 특징으로 하는 포토레지스트 도포속도 조절에 의한 오염입자 감소방법.In the method of reducing contaminants by controlling the photoresist coating speed, the first step of rotating the wafer for 3 to 8 seconds at a speed of 1000 to 3000 rpm, an acceleration of 5000 to 15000 rpm, a speed of 1000 to 3000 rpm, and an acceleration of 5000 to 15000 rpm The second step of applying the photoresist while rotating for 2 to 5 seconds, the third step to rotate for a short time at high speed, high acceleration, high speed of 2500 to 4500rpm, rotating for 10 to 20 seconds at an acceleration of 15000 to 25000rpm to adjust the film thickness And a fifth step of stripping the photoresist unevenly applied to the edge of the wafer by rotating the fourth step and the speed of 1000 to 3000 rpm and the acceleration of 15000 to 25000 rpm for 3 to 8 seconds. Method of reducing pollutant by control 제1항에 있어서, 상기 제3단계는 1500 내지 25000rpm의 속도, 5000 내지 15000rpm의 가속도로 0.01 내지 0.5초로 단시간 회전시켜 오염입자 흡착을 감소시키고, 막의 균일도를 높이는 것을 특징으로 하는 포토레지스트 도포속도 조절에 의한 오염입자 감소방법.The method of claim 1, wherein the third step is a short time rotation to 0.01 to 0.5 seconds at a speed of 1500 to 25000rpm, an acceleration of 5000 to 15000rpm to reduce the adsorption of contaminated particles, and to adjust the film resist coating speed, characterized in that to increase the uniformity of the film. Method of reducing contaminants by ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930012453A 1993-07-02 1993-07-02 Prevention method of pollutants by controlling photoresist coating velocity KR970007435B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930012453A KR970007435B1 (en) 1993-07-02 1993-07-02 Prevention method of pollutants by controlling photoresist coating velocity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930012453A KR970007435B1 (en) 1993-07-02 1993-07-02 Prevention method of pollutants by controlling photoresist coating velocity

Publications (2)

Publication Number Publication Date
KR950003922A true KR950003922A (en) 1995-02-17
KR970007435B1 KR970007435B1 (en) 1997-05-08

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Application Number Title Priority Date Filing Date
KR1019930012453A KR970007435B1 (en) 1993-07-02 1993-07-02 Prevention method of pollutants by controlling photoresist coating velocity

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KR (1) KR970007435B1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100344989B1 (en) * 2000-01-27 2002-07-20 주식회사 실리콘 테크 Computer-readable medium recording program for monitoring semiconductor device manufacturing apparatus
KR100359249B1 (en) * 1999-12-30 2002-11-04 아남반도체 주식회사 Method for eliminating bubble in an bottom anti reflective coating
KR100559218B1 (en) * 1999-06-28 2006-03-15 비오이 하이디스 테크놀로지 주식회사 Method of manufacturing TFT array substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100559218B1 (en) * 1999-06-28 2006-03-15 비오이 하이디스 테크놀로지 주식회사 Method of manufacturing TFT array substrate
KR100359249B1 (en) * 1999-12-30 2002-11-04 아남반도체 주식회사 Method for eliminating bubble in an bottom anti reflective coating
KR100344989B1 (en) * 2000-01-27 2002-07-20 주식회사 실리콘 테크 Computer-readable medium recording program for monitoring semiconductor device manufacturing apparatus

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KR970007435B1 (en) 1997-05-08

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