KR950003916A - Photoresist pattern formation method - Google Patents

Photoresist pattern formation method Download PDF

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Publication number
KR950003916A
KR950003916A KR1019930012643A KR930012643A KR950003916A KR 950003916 A KR950003916 A KR 950003916A KR 1019930012643 A KR1019930012643 A KR 1019930012643A KR 930012643 A KR930012643 A KR 930012643A KR 950003916 A KR950003916 A KR 950003916A
Authority
KR
South Korea
Prior art keywords
pattern
photoresist pattern
photoresist
improve
formation method
Prior art date
Application number
KR1019930012643A
Other languages
Korean (ko)
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KR960015640B1 (en
Inventor
정헌필
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019930012643A priority Critical patent/KR960015640B1/en
Publication of KR950003916A publication Critical patent/KR950003916A/en
Application granted granted Critical
Publication of KR960015640B1 publication Critical patent/KR960015640B1/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

Abstract

반도체 제조기술의 미세가공기술에 있어서, 양질의 정(positive) 포토레지스트 패턴을 형성하는 방법으로서 유용한 본 발명은 패턴 현상 후 알카리 용액에 의한 화학반응을 이용하여 패턴 전체를 고분자화시켜 패턴의 내성을 강하게 함으로써, 고 에너지에 의한 건식에칭에도 패턴의 변형을 막아주고 패턴의 선택비를 향상시켜 에칭공정에 대한 마진(margine)을 넓힐 수 있다. 그 결과, 다양한 미세가공 기술에 적합한 포토레지스트 패턴 형성방법을 제공할 수 있다.In the microfabrication technique of semiconductor manufacturing technology, the present invention, which is useful as a method of forming a high quality positive photoresist pattern, polymerizes the entire pattern using a chemical reaction with an alkaline solution after pattern development to improve the resistance of the pattern. By making it strong, it is possible to prevent deformation of the pattern even in dry etching due to high energy and to improve the selectivity of the pattern, thereby increasing the margin for the etching process. As a result, it is possible to provide a photoresist pattern forming method suitable for various microfabrication techniques.

Description

포토레지스트 패턴 형성방법Photoresist pattern formation method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (2)

포토레지스트 물질을 기판위에 도포하여 포토레지스트층을 형성하는 단계와, 상기 포토레지스트층의 소정부위를 노광시키는 단계와, 상기 노광된 포토레지스트층을 제거하기 위하여 현상 처리하는 단계와, 현상된 포토레지스트패턴 내부가 가교결합(cross-linking)을 이룰 수 있도록 알카리 용액으로 소우킹(soaking)하는 단계, 및 포토레지스트패턴을 경화건조시키는 단계로 이루어지는 것을 특징으로 하는 포토레지스트 패턴 형성방법.Applying a photoresist material onto the substrate to form a photoresist layer, exposing a predetermined portion of the photoresist layer, developing to remove the exposed photoresist layer, and developing the developed photoresist. A method of forming a photoresist pattern, comprising soaking with an alkali solution so that the inside of the pattern is cross-linked, and curing and drying the photoresist pattern. 제1항에 있어서, 상기 알카리 용액이 TMAH(Tetra Methyl Ammonium Hydroride) 또는 TMAH에 탈이온수가 소정비율로 혼합된 혼합물 중의 어느 하나로 이루어짐을 특징으로 하는 포토레지스트 패턴 형성방법.The method of claim 1, wherein the alkali solution is formed of any one of TMAH (Tetra Methyl Ammonium Hydroride) or a mixture of deionized water in TMAH at a predetermined ratio. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930012643A 1993-07-06 1993-07-06 Photoresist pattern forming method KR960015640B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930012643A KR960015640B1 (en) 1993-07-06 1993-07-06 Photoresist pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930012643A KR960015640B1 (en) 1993-07-06 1993-07-06 Photoresist pattern forming method

Publications (2)

Publication Number Publication Date
KR950003916A true KR950003916A (en) 1995-02-17
KR960015640B1 KR960015640B1 (en) 1996-11-18

Family

ID=19358801

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930012643A KR960015640B1 (en) 1993-07-06 1993-07-06 Photoresist pattern forming method

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000056474A (en) * 1999-02-22 2000-09-15 김영환 Novel photoresist crosslinker and photoresist composition using the same
KR100333035B1 (en) * 1998-08-06 2002-04-24 다니구찌 이찌로오, 기타오카 다카시 Method of manufacturing a semiconductor device and semiconductor device manufactured by the method
KR100499869B1 (en) * 1999-02-22 2005-07-07 주식회사 하이닉스반도체 Novel photoresist crosslinker and photoresist composition using the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100333035B1 (en) * 1998-08-06 2002-04-24 다니구찌 이찌로오, 기타오카 다카시 Method of manufacturing a semiconductor device and semiconductor device manufactured by the method
KR20000056474A (en) * 1999-02-22 2000-09-15 김영환 Novel photoresist crosslinker and photoresist composition using the same
KR100499869B1 (en) * 1999-02-22 2005-07-07 주식회사 하이닉스반도체 Novel photoresist crosslinker and photoresist composition using the same

Also Published As

Publication number Publication date
KR960015640B1 (en) 1996-11-18

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