KR950003483A - 입상재에서 제조한 용융물의 결정화에 의한 응고로 팽창되는 반도체재료로드 또는 블록의 제조방법 및 그 방법을 실시하는 장치 - Google Patents

입상재에서 제조한 용융물의 결정화에 의한 응고로 팽창되는 반도체재료로드 또는 블록의 제조방법 및 그 방법을 실시하는 장치 Download PDF

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Publication number
KR950003483A
KR950003483A KR1019940016663A KR19940016663A KR950003483A KR 950003483 A KR950003483 A KR 950003483A KR 1019940016663 A KR1019940016663 A KR 1019940016663A KR 19940016663 A KR19940016663 A KR 19940016663A KR 950003483 A KR950003483 A KR 950003483A
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KR
South Korea
Prior art keywords
semiconductor material
phase
solid phase
free surface
molten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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KR1019940016663A
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English (en)
Korean (ko)
Inventor
가이슬레르 요아킴
안그레스 울리히
Original Assignee
루돌프 스타우디글, 균터 시르베
와커-헤미트로닉 게셀샤프트 퓌르 에렉트로닉-그룬드스토프 엠베하
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Application filed by 루돌프 스타우디글, 균터 시르베, 와커-헤미트로닉 게셀샤프트 퓌르 에렉트로닉-그룬드스토프 엠베하 filed Critical 루돌프 스타우디글, 균터 시르베
Publication of KR950003483A publication Critical patent/KR950003483A/ko
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
KR1019940016663A 1993-07-15 1994-07-11 입상재에서 제조한 용융물의 결정화에 의한 응고로 팽창되는 반도체재료로드 또는 블록의 제조방법 및 그 방법을 실시하는 장치 Ceased KR950003483A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE93-P4323793.2 1993-07-15
DE4323793A DE4323793A1 (de) 1993-07-15 1993-07-15 Verfahren zur Herstellung von Stäben oder Blöcken aus beim Erstarren sich ausdehnendem Halbleitermaterial durch Kristallisieren einer aus Granulat erzeugten Schmelze sowie Vorrichtung zu seiner Durchführung

Publications (1)

Publication Number Publication Date
KR950003483A true KR950003483A (ko) 1995-02-17

Family

ID=6492930

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940016663A Ceased KR950003483A (ko) 1993-07-15 1994-07-11 입상재에서 제조한 용융물의 결정화에 의한 응고로 팽창되는 반도체재료로드 또는 블록의 제조방법 및 그 방법을 실시하는 장치

Country Status (7)

Country Link
US (1) US5492079A (cg-RX-API-DMAC10.html)
EP (1) EP0634504A1 (cg-RX-API-DMAC10.html)
JP (1) JPH0769775A (cg-RX-API-DMAC10.html)
KR (1) KR950003483A (cg-RX-API-DMAC10.html)
CN (1) CN1099434A (cg-RX-API-DMAC10.html)
DE (1) DE4323793A1 (cg-RX-API-DMAC10.html)
TW (1) TW314641B (cg-RX-API-DMAC10.html)

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Publication number Priority date Publication date Assignee Title
JP2935337B2 (ja) * 1994-11-21 1999-08-16 信越半導体株式会社 粒状原料の供給装置およびその供給方法
DE19638563C2 (de) * 1996-09-20 1999-07-08 Karlsruhe Forschzent Verfahren zum Ziehen von Einkristallen
US6126742A (en) * 1996-09-20 2000-10-03 Forshungszentrum Karlsruhe Gmbh Method of drawing single crystals
DE19927604A1 (de) 1999-06-17 2000-12-21 Bayer Ag Silicium mit strukturierter Sauerstoffdotierung, dessen Herstellung und Verwendung
US20030101924A1 (en) * 2001-11-15 2003-06-05 Memc Electronic Materials, Inc. Intermittent feeding technique for increasing the melting rate of polycrystalline silicon
US8021483B2 (en) * 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
DE10220964B4 (de) * 2002-05-06 2006-11-02 Pv Silicon Forschungs- Und Produktions Ag Anordnung zur Herstellung von Kristallstäben mit definiertem Querschnitt und kolumnarer polykristalliner Struktur mittels tiegelfreier kontinuierlicher Kristallisation
JP2004083322A (ja) * 2002-08-26 2004-03-18 Sumitomo Mitsubishi Silicon Corp Ｃｚ原料供給方法及び供給治具
US7816153B2 (en) * 2008-06-05 2010-10-19 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for producing a dislocation-free crystalline sheet
EP2382159A2 (en) * 2009-01-07 2011-11-02 REC Silicon Inc. Solidification of molten material over moving bed of divided solid material
DE102011007149A1 (de) * 2011-04-11 2012-10-11 Streicher Maschinenbau GmbH & Co. KG Verfahren und Vorrichtung zur Herstellung von Material mit mono- oder multikristalliner Struktur
US10087080B2 (en) * 2011-11-28 2018-10-02 Sino-American Silicon Products Inc. Methods of fabricating a poly-crystalline silcon ingot from a nucleation promotion layer comprised of chips and chunks of silicon-containing particles
CN104131338B (zh) * 2014-07-17 2016-08-24 大连理工大学 电子束顶部局部加热凝固多晶硅除杂装置及多晶硅加热凝固除杂方法
LV15065B (lv) * 2015-05-26 2015-11-20 Anatoly Kravtsov Silīcija beztīģeļa zonas kausēšanas paņēmiens
CN108091708B (zh) * 2017-12-08 2020-08-14 北京通美晶体技术有限公司 锗单晶片、其制法、晶棒的制法及单晶片的用途
CN110546315B (zh) 2018-03-29 2021-09-03 株式会社水晶系统 单晶制造装置
WO2020221440A1 (de) * 2019-04-30 2020-11-05 Wacker Chemie Ag Verfahren zur raffination von rohsilicium-schmelzen mittels eines partikulären mediators
CN115790229B (zh) * 2023-02-13 2023-05-09 成都天保节能环保工程有限公司 一种适用于流化床蓄热的结构的蓄热方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE138279C (cg-RX-API-DMAC10.html) *
NL104644C (cg-RX-API-DMAC10.html) * 1959-09-18
US3998686A (en) * 1975-03-10 1976-12-21 Corning Glass Works Sapphire growth from the melt using porous alumina raw batch material
DE2635373C2 (de) * 1975-08-08 1982-04-15 PCUK-Produits Chimiques Ugine Kuhlmann, 92400 Courbevoie, Hauts-de-Seine Verfahren und Vorrichtung zur kontinuierlichen Züchtung von Einkristallen bestimmter Form
DE2925679A1 (de) * 1979-06-26 1981-01-22 Heliotronic Gmbh Verfahren zur herstellung von siliciumstaeben
US4358416A (en) * 1980-12-04 1982-11-09 Olin Corporation Apparatus and process for cooling and solidifying molten material being electromagnetically cast
DE3531610A1 (de) * 1985-09-04 1987-03-05 Wacker Chemitronic Verfahren und vorrichtung zur herstellung von siliciumstaeben
JPS62246894A (ja) * 1986-04-15 1987-10-28 Kyushu Denshi Kinzoku Kk 単結晶の製造方法及びその装置
US4824519A (en) * 1987-10-22 1989-04-25 Massachusetts Institute Of Technology Method and apparatus for single crystal pulling downwardly from the lower surface of a floating melt
US5108720A (en) * 1991-05-20 1992-04-28 Hemlock Semiconductor Corporation Float zone processing of particulate silicon

Also Published As

Publication number Publication date
CN1099434A (zh) 1995-03-01
EP0634504A1 (de) 1995-01-18
JPH0769775A (ja) 1995-03-14
DE4323793A1 (de) 1995-01-19
US5492079A (en) 1996-02-20
TW314641B (cg-RX-API-DMAC10.html) 1997-09-01

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