KR950002410Y1 - Over current protecting circuit - Google Patents

Over current protecting circuit Download PDF

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Publication number
KR950002410Y1
KR950002410Y1 KR2019900008738U KR900008738U KR950002410Y1 KR 950002410 Y1 KR950002410 Y1 KR 950002410Y1 KR 2019900008738 U KR2019900008738 U KR 2019900008738U KR 900008738 U KR900008738 U KR 900008738U KR 950002410 Y1 KR950002410 Y1 KR 950002410Y1
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South Korea
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transistor
voltage
detection
circuit
output
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KR2019900008738U
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Korean (ko)
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KR920001511U (en
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조중현
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금성기전주식회사
김회수
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H1/00—Details of emergency protective circuit arrangements
    • H02H1/0007—Details of emergency protective circuit arrangements concerning the detecting means
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/008—Intrinsically safe circuits

Abstract

내용 없음.No content.

Description

검출용 센서의 과전류 보호회로Overcurrent Protection Circuit of Sensor for Detection

제1도는 종래의 검출용 센서회로도.1 is a conventional sensor circuit diagram for detection.

제2도는 본 고안에 따른 검출용 센서의 과전류 보호회로도.2 is an overcurrent protection circuit of the sensor for detection according to the present invention.

제3도는 본 고안에 따른 각부의 전원상태 타이밍도.3 is a timing diagram of power states of respective parts according to the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

A : 검출회로 Q1, Q2: 트랜지스터A: detection circuit Q 1 , Q 2 : transistor

IC1: 오피앰프 C1: 콘덴서IC 1 : Op amp C 1 : Capacitor

R1∼R6: 저항 R : 부하R 1 to R 6 : Resistance R: Load

본 고안은 검출용 샌서의 과전류 보호회로에 관한 것으로, 특히 검출용 센서의 출력소자인 트랜지터에 과전류가 흘러 트랜지스터가 파손되는 것을 방지하기 위한 과전류 보호회로에 관한 것이다.The present invention relates to an overcurrent protection circuit of a detection sander, and more particularly, to an overcurrent protection circuit for preventing an overcurrent from flowing through a transistor which is an output element of a detection sensor.

종래에는 제1도에서 보는 바와같이 물체유무를 판별하는 검출회로(A)의 출력단은 오피앰프(IC1)의 플러스 (+)입력단에 연결되고, 직류전압(Vcc)단으로 부터는 저항(R1)을 거쳐 상기 오피앰프(IC1)의 마이너스(-) 입력단에 연결됨과 동시에 저항(R2)을 연결하여 접지시키도록 되어있다.Conventionally, as shown in FIG. 1, the output terminal of the detection circuit A for determining the presence or absence of an object is connected to the positive (+) input terminal of the op amp IC 1 and the resistor R 1 from the DC voltage Vcc terminal. It is connected to the negative (-) input terminal of the op amp (IC 1 ) via the) and at the same time to connect the resistor (R 2 ) to ground.

또한, 오피앰프(IC1)의 출력은 저항(R3)을 통해 트랜지스터(Q1)의 베이스가 연결되고. 이 트랜지스터 (Q1)의 콜렉터는 부하(R)를 연결하여 직류전압(Vcc)이 인가되도록 하며, 이 트랜지스터(Q1)의 에미터는 접지시키도록 되어 있다.In addition, the output of the op amp (IC 1 ) is connected to the base of the transistor (Q 1 ) through a resistor (R 3 ). The collector of this transistor Q 1 connects the load R so that a DC voltage Vcc is applied, and the emitter of this transistor Q 1 is grounded.

이하, 상기와 같이 구성된 종래의 검출회로에 관한 동작상태를 설명하면 다음과 같다. 예를들면 물체유무를 검출하는 검출회로(A)가 물체를 감지하면 그 출력단(1)으로 감지신호에 따른 전압을 출력하게되고, 이 검출회로(A)의 출력전압이 오피앰프(IC1)의 플러스 (+)단자로 인가되면 오피앰프 (IC1)는 플러스(+)단으로 인가되는 검출회로(A)의 출력전압과 저항(R1, R2)에 의해 분압되어 마이너스(-)단으로 인가되는 기준전압을 비교하게 된다.Hereinafter, the operation state of the conventional detection circuit configured as described above is as follows. For example, when the detection circuit A for detecting the presence of an object detects an object, the output terminal 1 outputs a voltage according to the detection signal, and the output voltage of the detection circuit A is the op amp IC 1 . When applied to the positive (+) terminal of, the op amp (IC 1 ) is divided by the output voltage of the detection circuit (A) and the resistors (R 1 , R 2 ) applied to the positive (+) terminal. The reference voltage is applied to compare.

따라서, 검출회로(A)의 출력이 있는 상태에서는 오피앰프(IC1)의 플러스단 입력전압(검출전압)이 마이너스단 입력전압(기준전압)보다 높으므로 오피앰프(IC1)의 출력단에는 하이(High)상태의 전압이 출력되어 저항(R3)를 거쳐 트랜지스터(Q1)의 배이스로 인가된다.Accordingly, the detecting circuit (A) in a state where the output of the operational amplifier (IC 1) plus single input voltage (detected voltage) is negative, is higher than just the input voltage (reference voltage), the output terminal of the operational amplifier (IC 1) High The high voltage is output and applied to the base of the transistor Q 1 through the resistor R 3 .

이때, 상기 트랜지스터(Q1)는 도통상태가 되어 전류(I)가 흐르게되므로, 부하(R)가 작동하게된다.At this time, since the transistor Q 1 is in a conductive state and a current I flows, the load R is operated.

그러나 종래의 검출용 센서회로에 있어서는 트랜지스터(Q1)의 도통에 의해 흐르는 전(I)가 트랜지스터 (Q1)에서 허용할 수 없는(즉, 트랜지스터(Q1)의 허용전류값이상) 과전류일경우에는 트랜지스터(Q1)가 파손되어 항상 부도통상태를 유지하게 되므로, 검출회로(A)에서 소정의 검출작동이 이루어지더라도 경보 ·표시등의 수단으로 사용되는 부하(R)는 작동하지 못하게 되는 경우가 빈번히 발생하고 있는 문제점이 있었다.However, in the conventional sensor circuit without the former (I) flowing by the conduction of the transistor (Q 1) to allow the transistor (Q 1) (i.e., a transistor (more than the allowable current value of Q 1)) over current day In this case, since the transistor Q 1 is damaged and maintains a non-conducting state at all times, even if a predetermined detection operation is performed in the detection circuit A, the load R used as an alarm / indicator does not operate. There was a problem that occurs frequently.

이에따라, 본 고안은 상기의 문제점을 해결하기 위해 안출된 것으로, 첨부도면을 참조하여 상세히 설명하면 다음과 같다.Accordingly, the present invention is devised to solve the above problems, it will be described in detail with reference to the accompanying drawings.

본 고안의 과전류 보호회로는 종래의 검출용 센서회로에 추가한 것으로서. 물체유무를 판별하는 검출회로 (A)의 출력단에는 저항(R6)을 연결함과 동시에 오피앰프(IC1)의 플러스(+) 입력단을 연결하고, 상기 저항 (R6)으로 부터는 트랜지스터 (Q2)의 콜렉터를 연결하고, 이 트랜지스터(Q2)의 에미터는 접지시키도록 한다.The overcurrent protection circuit of the present invention is an addition to a conventional detection sensor circuit. The resistor R6 is connected to the output terminal of the detection circuit A for determining the presence of an object, and the positive input terminal of the op amp IC 1 is connected to the transistor Q 2 from the resistor R6. Connect the collector of and ground the emitter of this transistor (Q 2 ).

또한, 상기 트랜지스터(Q2)의 베이스단에는 콘텐서 (C1)와 저항(R4)을 연결하고, 이 콘텐서(C1)은 접지시키 도록한다. 그리고, 상기 저항(R4)로 부터는 트랜지스터 (Q1)의 에미터에 연결함과 동시에 저항(R5)를 연결하여 접지시키도록 한다.In addition, a capacitor C 1 and a resistor R 4 are connected to a base end of the transistor Q 2 , and the capacitor C 1 is grounded. The resistor R 4 is connected to the emitter of the transistor Q 1 and at the same time, the resistor R 5 is connected to ground.

상기와 같이 구성된 본 고안의 과전류 보호회로에 관한 동작상태 및 작용효과를 설명하면 다음과 같다. 즉 제2도에 있어서의 검출회로(A)가 물체를 감지하면, 그 출력단으로 검출신호에 따른 전압(V1)이 출력된다.Referring to the operation state and the effect of the overcurrent protection circuit of the present invention configured as described above are as follows. That is, the detecting circuit (A) in FIG. 2 when it detects an object, the voltage (V 1) in accordance with the detection signal to the output terminal is output.

따라서 상기 검출회로(A)의 출력전압(V1)이 오피앰프(IC1)의 플러스(+) 입력단으로 인가되면 오피앰프(IC1)는 저항(R1, R2)에 의해 설정된 기준전압(V2)과 비교하게되는데 마이너스(-)단으로 인가되는 기준전압(V2) 보다 검출회로(A)의 출력전압(V1)이 높게되므로 오피앰프(IC1)의 출력단에서 전압(V3)이 출력되어 트랜지스터(Q1)의 베이스로 인가된다.Therefore, based on when the output voltage (V 1) of said detecting circuit (A) applied in the plus (+) input terminal of the operational amplifier (IC 1) set by the operational amplifier (IC 1), the resistance (R 1, R 2) voltage (V 2) there is the comparison with the negative (-) output voltage (V 1) of the stage to the detecting circuit (a) than that applied to the reference voltage (V 2) that since the high voltage at the output terminal of the operational amplifier (IC 1) (V 3 ) is output and applied to the base of the transistor Q 1 .

따라서 트랜지스터(Q1)가 도통하게 되고 트랜지스터(Q1)를 통하여 전류(I1)가 흐르게 된다. 이때 트랜지스터(Q1)에 흐르는 전류(I1)가 트랜지스터(Q1)에서 허용할 수 없는 전류가 흐를경우 트랜지스터(Q1)의 에미터전압 (V4)은 0.7V이상이 되므로 트랜지스터(Q2)가 도통하게 된다. 이때 상기 트랜지스터(Q2)가 도통되면 오피앰프(IC1)의 플러스입력전압은 재로볼트(OV)에 가깝게 되므로 오러앰프(IC1)의 플러스입력이 마이너스단입력보다 낮개되어 오피앰프(IC1)의 출력단의 전압은 '로우'상태가 되므로, 트랜지스터(Q1)가 부도통상태가 된다. 거듭 상기 트랜지스터(Q1)이 부도통 상태가 되면 전류(I1)는 흐르지 않게되므로 에미터전압(V4)은 방전하게되고 트랜지스터(Q2)는 부도통상태가 된다. 트랜지스터(Q2)가 부도통상태로 되면 오피엠프(IC1)의 플러스(+)단 입력은 다시금 하이전압이 인가되므로, 오피엠프(IC1)의 출력단에는 하이전압이 출력되어 트랜지스터(Q1)는 도통 상태로 된다.Accordingly, transistor Q 1 becomes conductive and current I 1 flows through transistor Q 1 . At this time, the transistor emitter voltage (V 4) of the current (I 1) is when the current can not be allowed on the transistor (Q 1) flows through the transistor (Q 1) flowing to the (Q 1) is more than 0.7V, because the transistor (Q 2 ) becomes conductive. At this time, the transistor (Q 2) is when the operational amplifier is the positive input voltage (IC 1) is natgae more so close to the ash volts (OV) the positive input of the aura amplifier (IC 1) minus end input operational amplifier (IC 1 conduction Since the voltage at the output terminal of N) becomes 'low' state, transistor Q 1 is in a non-conductive state. When the transistor Q 1 is in a negative conduction state, the current I 1 does not flow, so the emitter voltage V 4 is discharged and the transistor Q 2 is in a nonconductive state. Transistor (Q 2) is when in default bucket state operational amplifier plus (+) of (IC 1) stage input, so once again applied to the high voltage, the op is output, the high voltage output of the amplifier (IC 1), the transistor (Q 1 ) Becomes a conductive state.

결과적으로, 트랜지스터(Q1)에 과전류(즉 V4=I1×R5 0.7V)가 흐를시 전압(V4)은 '하이'에서 '로우' 또는 '로우'에서 '하이'로 변환됨으로써 트랜지스터 (Q1)가 파손되는 것을 방지하게 된다.As a result, overcurrent (i.e. V 4 = I 1 × R 5 ) in transistor Q 1 When 0.7V) flows, the voltage V 4 is converted from 'high' to 'low' or 'low' to 'high' to prevent the transistor Q 1 from being damaged.

여기서, 상기 전압(V1, V3, V4)의 상태는 제3도의 펄스파형과 같다. 이상에서 설명한 바와같이 본 고안의 과전류 보호회로에 의하면, 출력소자 트랜지스터 (Q1)에 허용전류이상의 과전류가 흐르더라도 트랜지스터(Q1)를 온/오프하게 되므로 트랜지스터(Q1)의 파손을 방지할 수 있는 효과가 있다.Here, the state of the voltage (V 1 , V 3 , V 4 ) is the same as the pulse waveform of FIG. As described above, according to the overcurrent protection circuit of the present invention, the transistor Q 1 is turned on / off even if an overcurrent of the allowable current flows through the output element transistor Q1, thereby preventing damage to the transistor Q1. It works.

Claims (1)

물체유무를 검출하는 검출회로(A)의 출력전압과 기준전압을 비교하는 오피앰프(IC1)와, 상기 오피앰프(IC1)의 출력전압값에 따라 도통 및 부도통상태가 되어 부하(R)의 구동상태를 결정하도록 하는 트랜지스터(Q1)로 구비된 검출용 센서회로에 있어서, 상기 트랜지스터(Q1)에 흐르는 전류가 허용전류일 경우에는 도통시키고 과전류일경우에는 부도통시킴으로써 트랜지스터(Q1)를 파손을 방지하도록 하는 트랜지스터(Q2) ·저항(R4∼R6) 및 콘덴서(C1)를 포함하여 구비한 것을 특징으로 하는 검출용 센서의 과전류 보호회로.The op amp (IC 1 ) comparing the output voltage of the detection circuit (A) for detecting the presence of an object with the reference voltage and the output voltage value of the op amp (IC 1 ) become conductive and non-conductive according to the load (R). In the detecting sensor circuit provided with the transistor Q 1 to determine the driving state of the transistor, the transistor Q 1 conducts when the current flowing through the transistor Q 1 is a tolerable current, and conducts negative conduction when an overcurrent occurs. (1 ) A transistor (Q 2 ), a resistor (R 4 to R 6 ) and a capacitor (C 1 ) to prevent breakage, the over-current protection circuit of the sensor for detection, characterized in that.
KR2019900008738U 1990-06-21 1990-06-21 Over current protecting circuit KR950002410Y1 (en)

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KR2019900008738U KR950002410Y1 (en) 1990-06-21 1990-06-21 Over current protecting circuit

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Application Number Priority Date Filing Date Title
KR2019900008738U KR950002410Y1 (en) 1990-06-21 1990-06-21 Over current protecting circuit

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KR920001511U KR920001511U (en) 1992-01-28
KR950002410Y1 true KR950002410Y1 (en) 1995-04-03

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101321428B1 (en) * 2011-10-18 2013-10-28 한국전기연구원 Protection circuit for pulse power generator and protection method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101321428B1 (en) * 2011-10-18 2013-10-28 한국전기연구원 Protection circuit for pulse power generator and protection method thereof

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