KR940016923A - Source / drain region formation method of semiconductor device - Google Patents

Abstract

When forming the source / drain regions of the semiconductor device, the silicon substrate is maintained at about 450 ° C., which is a relatively low temperature in terms of ion diffusion, thereby preventing silicon defects generated during ion implantation due to self-annealing, and thus additional or incidental high temperature. Forms low junctions without the need for a process.

Description

Source / drain region formation method of semiconductor device

Since this is an open matter, no full text was included.

5 is a cross-sectional view of a semiconductor device showing a state in which all insulating films are removed except the insulating film on the contact sidewall. 6 is a cross-sectional view of a semiconductor device showing a step of forming a source / drain region by performing an ion implantation process from the top of the overall structure; 7 is a cross-sectional view of a semiconductor device showing the step of forming a metallization and passivation film from above the entire structure.

Claims (2)

Forming a gate insulating film (2) and a gate (3) on the silicon substrate (1), sequentially forming an interlayer insulating film (4) and a planarization film (5) on the gate (3), and Etching a predetermined portion of the interlayer insulating film 4 and the planarization film 5 to form a contact, forming an insulating film 6 on the entire structure to a predetermined thickness, and forming a whole insulating film except for the contact side wall ( 6) removing, implanting ions from the top of the entire structure to form a source / drain region 10 in a predetermined portion of the silicon substrate 1, metal wiring 8 and passivation over the entire structure A method of forming a source / drain region of a semiconductor device comprising forming a bastion film 9, wherein the ion implanted silicon substrate 1 is raised to a low temperature to form the source / drain region 10. Holding to form a low junction Source / drain regions The method of forming a semiconductor device of a. The method of claim 1, wherein the low temperature is about 450 ° C. 3. ※ Note: The disclosure is based on the initial application.