KR940016917A - Method of manufacturing thin film transistor - Google Patents

Method of manufacturing thin film transistor Download PDF

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Publication number
KR940016917A
KR940016917A KR1019920026370A KR920026370A KR940016917A KR 940016917 A KR940016917 A KR 940016917A KR 1019920026370 A KR1019920026370 A KR 1019920026370A KR 920026370 A KR920026370 A KR 920026370A KR 940016917 A KR940016917 A KR 940016917A
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KR
South Korea
Prior art keywords
active layer
contact resistance
thin film
film transistor
resistance layer
Prior art date
Application number
KR1019920026370A
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Korean (ko)
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KR960006111B1 (en
Inventor
강성구
Original Assignee
이헌조
주식회사 금성사
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Priority to KR1019920026370A priority Critical patent/KR960006111B1/en
Publication of KR940016917A publication Critical patent/KR940016917A/en
Application granted granted Critical
Publication of KR960006111B1 publication Critical patent/KR960006111B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)

Abstract

본 발명은 박막트랜지스터에 관한 것으로 박막트랜지스터의 접촉저항층 제조방법에 관한 것이다.The present invention relates to a thin film transistor, and to a method for manufacturing a contact resistance layer of a thin film transistor.

종래에는 기판(b)위에 게이트전극(1)과 절연막(4)을 형성하고, 그위에 활성층(3)과 접촉저항층(5)을 차례로 형성한뒤 소오스/드레인전극(2)을 형성하여 소오스/드레인전극(2)을 마스크로 이용하여 채널영역의 접촉저항층(5)을 제거하였다.Conventionally, the gate electrode 1 and the insulating film 4 are formed on the substrate b, the active layer 3 and the contact resistance layer 5 are sequentially formed thereon, and then the source / drain electrodes 2 are formed to form a source. The contact resistance layer 5 in the channel region was removed using the / drain electrode 2 as a mask.

따라서 채널영역의 접촉저항층이 완벽하게 제거되지 않고 접촉저항층의 n+이온이 활성층에 확산되어 완전한 오프동작이 어렵고 확산된 활성층을 제거할때 과도식각되어 문턱전류 및 온전류가 증가되는 결점이 있었다.Therefore, the contact resistance layer of the channel region is not completely removed, and n + ions of the contact resistance layer are diffused into the active layer, so that it is difficult to completely turn off the operation, and when the diffused active layer is removed, the threshold current and the on current are increased. there was.

본 발명은 기판(6)위에 게이트전극(1)과 절연막(4) 활성층(3)을 형성한뒤 활성층(3)의 채널영역에 마스킹하고 n+이온을 활성층 표면에 주입하여 접촉저항층(5)을 형성한 것이다.The present invention forms a gate electrode 1 and an insulating film 4 on the substrate 6 and then masks the active layer 3 in the channel region of the active layer 3 and injects n + ions into the surface of the active layer to form a contact resistance layer 5. ) Is formed.

따라서 종래의 결점을 해결한다.Therefore, the conventional drawback is solved.

Description

박막트랜지스터 제조방법Method of manufacturing thin film transistor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 3 도는 본 발명의 박막트랜지스터 평면도, 제 4 도는 제 4 도의 B-B' 선상 단면도, 제 5 도는 본 발명 박막트랜지스터 공정 단면도.3 is a plan view of a thin film transistor of the present invention, FIG. 4 is a sectional view taken along line B-B 'of FIG. 4, and FIG.

Claims (2)

투명용 절연기판(6)위에 게이트전극(1)을 형성하는 공정과, 전면에 절연막(4)을 형성하고 게이트전극(1) 상부영역의 절연막(4)위에 활성층(3)을 형성하는 공정과, 활성층(3)의 채널영역에 마스크를 형성하고 활성층(3) 표면에 n+이온주입하여 접촉저항층(5)을 형성하는 공정과, 마스크를 제거하고 소오스/드레인전극(2)을 형성하는 공정을 포함함을 특징으로 하는 박막트랜지스터 제조방법.Forming a gate electrode (1) on the transparent insulating substrate (6), forming an insulating film (4) on the front surface, and forming an active layer (3) on the insulating film (4) in the upper region of the gate electrode (1); Forming a mask in the channel region of the active layer 3 and implanting n + ions into the surface of the active layer 3 to form the contact resistance layer 5, and removing the mask to form the source / drain electrodes 2. Thin film transistor manufacturing method comprising the step of. 제 1 항에 있어서, 채널영역의 마스크는 전면에 네가티브형 감광막(7)을 종착하고 소오스/드레인 전극 패턴마스크를 이용하여 노광 및 현상으로 형성함을 특징으로 하는 박막트랜지스터 제조방법.The method of manufacturing a thin film transistor according to claim 1, wherein the mask of the channel region is formed by exposing and developing a negative photosensitive film (7) on the entire surface and using a source / drain electrode pattern mask. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920026370A 1992-12-30 1992-12-30 Thin film transistor manufacturing process KR960006111B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920026370A KR960006111B1 (en) 1992-12-30 1992-12-30 Thin film transistor manufacturing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920026370A KR960006111B1 (en) 1992-12-30 1992-12-30 Thin film transistor manufacturing process

Publications (2)

Publication Number Publication Date
KR940016917A true KR940016917A (en) 1994-07-25
KR960006111B1 KR960006111B1 (en) 1996-05-08

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ID=19347497

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920026370A KR960006111B1 (en) 1992-12-30 1992-12-30 Thin film transistor manufacturing process

Country Status (1)

Country Link
KR (1) KR960006111B1 (en)

Also Published As

Publication number Publication date
KR960006111B1 (en) 1996-05-08

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