KR940016736A - Interlayer connection structure and method of semiconductor device - Google Patents

Abstract

The present invention has a shape that is elongated so as to be connected with the first pad in both directions of the first pad and the first pad, the first conductive line formed in the conductive layer of the first layer, and the first conductivity. Running in parallel with the line and partially boiled in the region where the first pad is formed, the second conductive line formed in the conductive layer of the first layer, and the first contact hole formed on the second conductive line. A second pad connected to the second conductive line and formed in the conductive layer of the second layer, and the first conductive line through a second contact hole formed in the same shape as the first conductive line and formed on the first pad. Connected to the second pad through a first metal layer formed on the metal layer of the first layer and a third contact hole formed on the second pad and extending in a direction parallel to the first metal layer. Shaped into a second The metal layer formed in the present invention relates to an interlayer connection structure of the semiconductor device characterized in that it comprises a second metal layer on.

Description

Interlayer connection structure and method of semiconductor device

Since this is an open matter, no full text was included.

4, 5, and 6 are layout diagrams used for the interlayer connection of the semiconductor device according to the present invention, and FIGS. 7A and 7B are manufactured by one embodiment of the method of the interlayer connection of the semiconductor device according to the present invention. Showing the interlayer connection structure of the semiconductor device.

Claims (10)

The first pad has a shape that extends in both directions of the first pad so as to be connected to the first pad, and is parallel to the first conductive line and the first conductive line formed in the conductive layer of the first layer. In the region where the first pad is formed and partially boiled, the second conductive line formed in the conductive layer of the first layer and the second conductive line formed through the first contact hole formed on the second conductive line. A second pad connected to the line and formed in the conductive layer of the second layer, and connected to the first conductive line through a second contact hole formed in the same shape as the first conductive line and formed on the first pad, A first metal layer formed on the first metal layer and a third contact hole formed on the second pad and connected to the second pad and extending in a direction parallel to the first metal layer. Metal layer of the second layer An interlayer connection structure of the semiconductor device characterized in that it comprises a second metal layer formed of. The method of claim 1, wherein the first layer is formed on the metal layer and is formed in the same shape and the same area as the second conductive line, wherein a portion of the lower surface is in contact with the second pad and a portion of the upper surface is in contact with the second metal layer. An interlayer connection structure of a semiconductor device, further comprising a third metal layer. The agent according to claim 1 or 2, which is formed on the upper layer so as to partially contact the surface of the conductive layer of the first layer, and is formed in a shape not overlapping with a part of the first conductive line and the second conductive line. An interlayer connection structure of a semiconductor device, further comprising a barrier layer of 1. 4. The second barrier layer of claim 3, wherein the second barrier layer is formed on the upper layer so as to partially contact the surface of the metal layer of the first layer and is formed so as not to overlap with the part of the first metal layer and the third metal layer. The interlayer connection structure of the semiconductor device further comprising. One conductive line is formed to be long, and another conductive line next to the conductive line is formed to be broken at a predetermined portion, and the other conductive line is connected to each other by another conductive line formed on another layer. An interlayer connection method of a semiconductor device. A first step of forming a first insulating layer on a semiconductor substrate, depositing a conductive layer of the first layer on the first insulating layer and then patterning the first pad, the first pad in both directions of the first pad A first conductive line having a shape extending to be connected to the pad of the first conductive line and a second conductive line having a shape that is partially broken in a region where the first pad is formed and which runs in parallel with the first conductive line; 2nd process, the 3rd process of forming a 2nd insulating layer in the whole surface, and the 4th process of forming the 1st contact hole by partially etching the said 2nd insulating layer formed on the 2nd conductive line. And forming a conductive layer of the second layer on the entire surface of the second insulating layer to include the first contact hole, and patterning the conductive layer of the second layer to form a square shape around the first contact hole. A second forming pad In step 6, the seventh step of forming a third insulating layer on the entire surface of the substrate on which the second pad is formed, the second insulating hole is formed by partially etching the insulating layer stacked on the first pad. An eighth step of forming a metal layer of the first layer on the entire surface of the third insulating layer so as to include the second contact hole, and patterning the metal layer of the first layer to form a first contact through the second contact hole. An insulating layer formed on the second pad, the tenth step of forming a metal layer of a first layer having the same shape as the first conductive line, the eleventh step of forming a fourth insulating layer on the entire surface thereof, connected to the conductive line Process of forming the third contact hole by partially etching the third contact hole, forming the metal layer of the second layer on the entire surface of the fourth insulating layer to include the third contact hole, and Pattern the metal layer to connect with the second pad through the third contact hole It said conductive lines and the second interlayer connection method of a semiconductor device comprising the 14 step of forming a second conductive layer formed in parallel. The method of claim 6, wherein during the eighth step, a step of partially etching the insulating layer stacked on the second pad is also performed to form a fourth contact hole simultaneously with the second contact hole. And forming a third metal layer simultaneously with the first metal layer in the same region as the second conductive line in the same step as the second conductive line. 8. The method of claim 6 or 7, further comprising, after the second step, forming a first barrier layer in a shape that does not overlap a portion of the first conductive line and the second conductive line. Interlayer connection method of semiconductor device. 9. The semiconductor device according to claim 8, further comprising a step of forming a second barrier layer after the tenth step in a shape that does not overlap with a portion of the first metal layer and the third metal layer. Interlayer connection method. 7. The interlayer of a semiconductor device according to claim 6, wherein the conductive layer of the first layer and the conductive layer of the second layer are formed of polycrystalline silicon, and the metal layer of the first layer and the metal of the second layer are formed of aluminum. How to connect. ※ Note: The disclosure is based on the initial application.