KR940016248A - Sense Amplifier Control Circuit - Google Patents

Sense Amplifier Control Circuit Download PDF

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Publication number
KR940016248A
KR940016248A KR1019920026716A KR920026716A KR940016248A KR 940016248 A KR940016248 A KR 940016248A KR 1019920026716 A KR1019920026716 A KR 1019920026716A KR 920026716 A KR920026716 A KR 920026716A KR 940016248 A KR940016248 A KR 940016248A
Authority
KR
South Korea
Prior art keywords
sense amplifier
control circuit
amplifier control
current
circuit
Prior art date
Application number
KR1019920026716A
Other languages
Korean (ko)
Other versions
KR950005574B1 (en
Inventor
안승환
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019920026716A priority Critical patent/KR950005574B1/en
Publication of KR940016248A publication Critical patent/KR940016248A/en
Application granted granted Critical
Publication of KR950005574B1 publication Critical patent/KR950005574B1/en

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type

Abstract

본 발명은 반도체 메모리 소자의 감지증폭기가 외부전원 Vcc의 변동에 따라 동작속도가 변화되는 것을 방지하기 위해, 상기의 감지증폭기를 조절하는 회로인 감지증폭기 조절회로를 기준전압 발생회로와 전류조절 회로를 사용하여, 액티브 상태에서 감지증폭기 조절회로에 흐르는 전류의 양을 일정하게 유지시키도록하므로써 감지증폭기의 동작속도를 일정하게 제어하는 것에 관한 기술이다.In order to prevent the sensing amplifier of the semiconductor memory device from being changed in operation speed according to the change of the external power supply Vcc, the sensing amplifier control circuit, which is a circuit for adjusting the sensing amplifier, includes a reference voltage generator circuit and a current control circuit. The present invention relates to controlling the operating speed of the sense amplifier by maintaining a constant amount of current flowing through the sense amplifier control circuit in the active state.

Description

감지 증폭기 조절회로Sense Amplifier Control Circuit

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명의 감지 증폭기 조절회로의 구성을 도시한 블럭도, 제4도는 본 발명의 감지 증폭기 조절회로의 제1실시예도, 제5도는 본 발명의 감지 증폭기 조절회로의 제2실시예도.3 is a block diagram showing the configuration of the sense amplifier control circuit of the present invention, FIG. 4 is a first embodiment of the sense amplifier control circuit of the present invention, and FIG. 5 is a second embodiment of the sense amplifier control circuit of the present invention.

Claims (5)

일정한 레벨의 기준전압을 출력하는 기준전압발생 회로와, 상기 기준전압 발생회로의 기준전압을 입력으로 하고, 커런트 미러구조로 되어 있어서, 일정한 양의 전류가 흐르는 전류조절회로와, 상기 전류조절회로와 커런트 미러구조를 구성하면서, 동시에 감지 증폭기에 연결되어 감지 증폭기의 동작을 조절하도록 하나의 트랜지스터로 구현된 감지 증폭기의 조절부로 이루어지는 것을 특징으로 하는 감지 증폭기 조절회로.A reference voltage generating circuit for outputting a reference voltage of a constant level, a reference mirror of the reference voltage generating circuit as a current mirror structure, and a current regulating circuit through which a constant amount of current flows; A sense amplifier control circuit, comprising a control unit of a sense amplifier implemented as a transistor so as to configure a current mirror structure and simultaneously connected to the sense amplifier to control the operation of the sense amplifier. 제1항에 있어서, 전류조절회로와 감지 증폭기 조절부는 클럭신호에 의해 게이트가 제어되는 트랜지스터를 포함하므로써,그 동작이 제어되는 것을 특징으로 하는 감지 증폭기 조절회로.The sense amplifier control circuit according to claim 1, wherein the current control circuit and the sense amplifier control section include a transistor whose gate is controlled by a clock signal, so that its operation is controlled. 제1항에 있어서, 감지 증폭기 조절부는 PMOS트랜지스터로 구현하여 감지 증폭기에 전류를 방전하도록 하는 것을 특징으로하는 감지 증폭기 조절회로.The sense amplifier control circuit of claim 1, wherein the sense amplifier controller is implemented as a PMOS transistor to discharge current to the sense amplifier. 제1항에 있어서, 감지 증폭기 조절부는 NMOS트랜지스터로 구현하여 감지 증폭기의 전류를 방전하도록 하는 것을 특징으로하는 감지 증폭기 조절회로.The sense amplifier control circuit of claim 1, wherein the sense amplifier control unit is implemented as an NMOS transistor to discharge current of the sense amplifier. 제1항에 있어서, 감지 증폭기 조절부를 PMOS트랜지스터로 구현한 것과 NMOS트랜지스터로 구현한 것을 하나의 감지 증폭기에 연결시켜, 감지 증폭기에 전류를 충전, 방전하는 것을 특징으로 하는 감지 증폭기 조절회로.The sense amplifier control circuit of claim 1, wherein the sense amplifier control unit is implemented by a PMOS transistor and an NMOS transistor connected to a sense amplifier to charge and discharge current in the sense amplifier. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920026716A 1992-12-30 1992-12-30 Sense-amplifier control circuit KR950005574B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920026716A KR950005574B1 (en) 1992-12-30 1992-12-30 Sense-amplifier control circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920026716A KR950005574B1 (en) 1992-12-30 1992-12-30 Sense-amplifier control circuit

Publications (2)

Publication Number Publication Date
KR940016248A true KR940016248A (en) 1994-07-22
KR950005574B1 KR950005574B1 (en) 1995-05-25

Family

ID=19347851

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920026716A KR950005574B1 (en) 1992-12-30 1992-12-30 Sense-amplifier control circuit

Country Status (1)

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KR (1) KR950005574B1 (en)

Also Published As

Publication number Publication date
KR950005574B1 (en) 1995-05-25

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