KR940010431A - Vertical Oscillation Semiconductor Laser Diode - Google Patents

Vertical Oscillation Semiconductor Laser Diode Download PDF

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Publication number
KR940010431A
KR940010431A KR1019920018264A KR920018264A KR940010431A KR 940010431 A KR940010431 A KR 940010431A KR 1019920018264 A KR1019920018264 A KR 1019920018264A KR 920018264 A KR920018264 A KR 920018264A KR 940010431 A KR940010431 A KR 940010431A
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KR
South Korea
Prior art keywords
laser diode
layer
semiconductor laser
vertical oscillation
gaas
Prior art date
Application number
KR1019920018264A
Other languages
Korean (ko)
Inventor
윤두협
Original Assignee
이헌조
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019920018264A priority Critical patent/KR940010431A/en
Publication of KR940010431A publication Critical patent/KR940010431A/en

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Abstract

본 발명은 반도체 레이저 다이오드에 관한 것으로, 특히 수직 발진이 되도록 하여 n형과 p형 전극을 한 평면상에 형성하여 소자 부착시 납땜용액이 활성층을 막는 것을 방지할 수 있으며, 와이어 본딩이 용이하도록 한 것이다.The present invention relates to a semiconductor laser diode, and in particular, to form a vertical oscillation to form n-type and p-type electrodes on one plane to prevent the solder solution from blocking the active layer when the device is attached, and to facilitate wire bonding will be.

본 발명의 특징은 레이저 다이오드 성장시 캡층을 두껍게 성장해서 그측면에 n,p형 전극을 형성한 것이며, n,p형 전극이 동일 평만상있기 때문에 외부소자와의 접속이 매우 용이해지고, 접속시의 소자 특성파괴도 배제할수 있다는 점이다.A feature of the present invention is that when the laser diode is grown, the cap layer is thickly grown to form n, p-type electrodes on the side thereof, and since the n- and p-type electrodes are in the same flat state, it is very easy to connect with external devices. It is also possible to exclude the destruction of device characteristics.

Description

수직 발진형 반도체 레이저 다이오드Vertical Oscillation Semiconductor Laser Diode

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 따른 반도체 레이저 다이오드의 제조 공정도,2 is a manufacturing process diagram of a semiconductor laser diode according to the present invention,

제3도는 본 발명에 따른 반도체 레이저 다이오드의 단면구조도.3 is a cross-sectional view of a semiconductor laser diode according to the present invention.

Claims (1)

세로 방향으로 세운 소정 두께의 P-GaAs기판(1)에 차례로 전류 제한층인 N-GaAs층(2), V자홈이 형성되어 있는 P-AlGaAs층(3), 레이저빔을 발생하는 AlGaAs층(4), 클래드층인 N-GaAs층(5) 및 상기 기판보다 두꺼운 N-GaAs층(6)을 제공하고, 상기 P-GaAs기판(1)과 N-GaAs층(6) 각각의 상부에 P형과 N형 전극(7)을 형성한 것을 특징으로 하는 반도체 레이저 다이오드.An N-GaAs layer 2 as a current limiting layer, a P-AlGaAs layer 3 with V-shaped grooves, and an AlGaAs layer for generating a laser beam are sequentially formed on a P-GaAs substrate 1 having a predetermined thickness in the vertical direction. 4), an N-GaAs layer 5, which is a cladding layer, and an N-GaAs layer 6, which is thicker than the substrate, are provided, and P is placed on top of each of the P-GaAs substrate 1 and the N-GaAs layer 6; A semiconductor laser diode comprising a type and an N type electrode 7 formed thereon. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920018264A 1992-10-06 1992-10-06 Vertical Oscillation Semiconductor Laser Diode KR940010431A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920018264A KR940010431A (en) 1992-10-06 1992-10-06 Vertical Oscillation Semiconductor Laser Diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920018264A KR940010431A (en) 1992-10-06 1992-10-06 Vertical Oscillation Semiconductor Laser Diode

Publications (1)

Publication Number Publication Date
KR940010431A true KR940010431A (en) 1994-05-26

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ID=67210270

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920018264A KR940010431A (en) 1992-10-06 1992-10-06 Vertical Oscillation Semiconductor Laser Diode

Country Status (1)

Country Link
KR (1) KR940010431A (en)

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