KR940008893B1 - Method of manufacturing capacitor - Google Patents
Method of manufacturing capacitor Download PDFInfo
- Publication number
- KR940008893B1 KR940008893B1 KR1019870015499A KR870015499A KR940008893B1 KR 940008893 B1 KR940008893 B1 KR 940008893B1 KR 1019870015499 A KR1019870015499 A KR 1019870015499A KR 870015499 A KR870015499 A KR 870015499A KR 940008893 B1 KR940008893 B1 KR 940008893B1
- Authority
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- South Korea
- Prior art keywords
- capacitor
- oxide layer
- thickness
- native oxide
- substrate
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title abstract description 18
- 238000004519 manufacturing process Methods 0.000 title description 8
- 230000001590 oxidative effect Effects 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000004544 sputter deposition Methods 0.000 claims abstract description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract 2
- 239000010408 film Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
제1도는 종래의 캐패시터 구조를 나타낸 도면.1 is a view showing a conventional capacitor structure.
제2도는 본 발명에 의한 캐패시터를 나타낸 도면.2 is a view showing a capacitor according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : n-형 Si기판 2 : SiO2또는 Si3N4 1: n-type Si substrate 2: SiO 2 or Si 3 N 4
3 : 금속전극 4 : 기본 산화층3: metal electrode 4: basic oxide layer
5 : Ta2O5 5: Ta 2 O 5
본 발명은 캐패시터 제조에 관한 것으로, 특히 소형 전자회로에 사용하기에 적합한 소형 대용량의 캐패시터 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to capacitor manufacturing, and more particularly, to a method of manufacturing a small capacity capacitor suitable for use in small electronic circuits.
종래에는 캐패시터를 제조하는데 있어서, 제1도와 같이 산화물(SiO2)이나 Si3N4(2)등을 실리콘 기판(1)상에 성장시키고 그 위에 금속전극(3)을 입히는 방법이 사용되어 왔다.Conventionally, in manufacturing a capacitor, a method of growing an oxide (SiO 2 ), Si 3 N 4 (2), etc. on a silicon substrate 1 and coating a
이때 사용되는 유전체인 SiO2또는 Si3N4등은 극히 얇은 <200Å의 박막으로 제조되어 사용되는데 두께 조절이 어렵고 또 박막으로 형성시 많은 국부적 결함이 존재하여 신뢰성이 부족하였다.At this time, SiO 2 or Si 3 N 4 , which is a dielectric used, is made of an extremely thin thin film of <200 μs, which is difficult to control the thickness, and when formed into a thin film, many local defects exist, and thus reliability is insufficient.
또 <200Å 정도의 두께의 경우 항복전압(Break down Voltage)이 상대적으로 낮아져서 결국 두께를 두껍게 하거나 면적을 크게 하여 캐패시터를 제조해야 하므로 고집적의 IC를 제조하는 경우 면적을 줄일 수 없는 단점을 갖게 된다.In the case of a thickness of <200 mA, the breakdown voltage is relatively low, and thus, a capacitor must be manufactured by increasing the thickness or increasing the area, and thus, when manufacturing a highly integrated IC, the area cannot be reduced.
따라서, 본 발명은 작은 면적에서도 큰 캐패시터를 갖는 캐패시터를 제조하기 위해 유전체로서 극히 얇은 산화막을 사용하는 경우에 발생되는 결함을 국부적으로 산화반응에 의해 방지하여 신뢰성이 향상된 소형 대용량의 캐패시터를 제공하는데 그 목적이 있다.Accordingly, the present invention provides a small-capacity capacitor having improved reliability by locally preventing oxidation defects generated when an extremely thin oxide film is used as a dielectric to manufacture a capacitor having a large capacitor even in a small area. There is a purpose.
이와 같은 목적을 달성하기 위한 본 발명은 n-형 Si 기판상에 기본 산화층(native oxide)을 20 내지 100Å 크기로 성장시키고, 그 위에 Ta2O5를 100Å~500Å크기로 성장시킨 다음 산화분위기에서 취약부분(Weakspot)을 산화하여 부분적으로 기본 산화층을 두껍게 성장시킨 후 스퍼터링이나 증착에 의해 Al 또는 Al 합금을 전극으로 형성시킴으로써 작은 면적에 대용량을 갖는 캐패시터를 제조함을 특징으로 한다.In order to achieve the above object, the present invention grows a native oxide layer on a n-type Si substrate to a size of 20 to 100 GPa, and grows Ta 2 O 5 to a size of 100 to 500 GPa thereon, in an oxidizing atmosphere. By oxidizing the weak spot (Weakspot) and partially growing the basic oxide layer thick, by forming a Al or Al alloy as an electrode by sputtering or vapor deposition, a capacitor having a large capacity in a small area is characterized.
이하, 본 발명의 실시예를 첨부된 도면에 의거하여 상세히 설명한다.Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
제2도는 본 발명에 의한 캐패시터이며, n-형 Si기판(1)상에 20내지 30Å 두께의 기본 산화층(4)을 형성시키고 다시 이 위에 유전율이 큰 산화탄탈(Ta2O5)을 사용하여 두께 <200Å의 유전체(5)를 입힌다.FIG. 2 is a capacitor according to the present invention, which forms a basic oxide layer 4 having a thickness of 20 to 30 Å on an n-type Si substrate 1 and again uses tantalum oxide (Ta 2 O 5 ) having a high dielectric constant thereon. A dielectric 5 of thickness <200
이때에 발생되는 국부적 결함인 취약부분을 산화분위기에서 산화시켜 주면 취약점 부분의 Ta2O5막이 부분적으로 얇기 때문에 그 지점에서의 산소의 확산속도가 더 빠르게 되는 것을 이용하여 기본 산화물층을 두껍게 성장시킨다.If the vulnerable part, which is a local defect generated at this time, is oxidized in the oxidizing atmosphere, the Ta 2 O 5 film is partially thin in the weak part, so that the diffusion rate of oxygen at that point is increased to make the basic oxide layer thicker .
그후 스퍼터링이나 증착에 의해 금속전극(3)(예를 들어 Al 또는 Al 합금)을 형성시켜 제작한다.Thereafter, the metal electrode 3 (for example, Al or Al alloy) is formed by sputtering or vapor deposition.
본 발명에 따른 캐패시터에 있어서 직렬 캐패시턴스의 경우, 이를 식으로 표시하면 다음과 같다.In the case of the series capacitance in the capacitor according to the present invention, this is expressed as follows.
여기에서 C, ε0,εr,A, tox는 상기한 바와 같고, CT는 총 캐패시터이다.Where C, ε 0, ε r, A, t ox are as described above, and C T is the total capacitor.
본 발명의 방법에 의하면, 유전율이 큰 산화탄탈을 사용하여 극히 얇은 박막(두께<200Å)의 유전체의 제조가 가능하여 작은 면적에서도 대용량을 갖는 캐패시터를 제작할 수 있을 뿐 아니라, 취약점의 발생을 방지하기 위해 취약점 부근의 기본 산화층의 상대적 보강을 산화법으로써 보상해줌으로써 Ta2O5산화막과 기본 산화층의 두께가 전체적으로 균일하게 되어 전계의 인가를 균일하게 할 수 있고 이에 따라 항복전계가 높아지게 되므로 막의 품질도 향상되는 등의 이점을 얻게 된다.According to the method of the present invention, it is possible to manufacture an extremely thin thin film (thickness <200 μs) dielectric material using tantalum oxide having a high dielectric constant, and to produce a capacitor having a large capacity even in a small area, and to prevent the occurrence of weakness. By compensating the relative reinforcement of the basic oxide layer near the vulnerabilities by the oxidation method, the thickness of the Ta 2 O 5 oxide layer and the basic oxide layer is uniform throughout, so that the application of the electric field can be made uniform, and the yield field is high, thereby improving the quality of the film. And so on.
또한, Ta2O5막을 극히 얇게 입혀주기 때문에 다른 캐패시터에 비하여 캐패시턴스가 매우 큰 소형의 캐패시터를 얻을 수 있으므로 제조단가를 절감할 수 있어 경제성 면에서나 효율면에서도 우수하다.In addition, since the Ta 2 O 5 film is extremely thin, a small capacitor having a very large capacitance can be obtained compared to other capacitors, thereby reducing the manufacturing cost and providing excellent economical efficiency and efficiency.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019870015499A KR940008893B1 (en) | 1987-12-31 | 1987-12-31 | Method of manufacturing capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019870015499A KR940008893B1 (en) | 1987-12-31 | 1987-12-31 | Method of manufacturing capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR890010957A KR890010957A (en) | 1989-08-11 |
| KR940008893B1 true KR940008893B1 (en) | 1994-09-28 |
Family
ID=19267779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019870015499A KR940008893B1 (en) | 1987-12-31 | 1987-12-31 | Method of manufacturing capacitor |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR940008893B1 (en) |
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1987
- 1987-12-31 KR KR1019870015499A patent/KR940008893B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR890010957A (en) | 1989-08-11 |
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