KR890010957A - How to make capacitor - Google Patents

How to make capacitor Download PDF

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Publication number
KR890010957A
KR890010957A KR1019870015499A KR870015499A KR890010957A KR 890010957 A KR890010957 A KR 890010957A KR 1019870015499 A KR1019870015499 A KR 1019870015499A KR 870015499 A KR870015499 A KR 870015499A KR 890010957 A KR890010957 A KR 890010957A
Authority
KR
South Korea
Prior art keywords
make capacitor
gpa
grown
capacitor
oxidation
Prior art date
Application number
KR1019870015499A
Other languages
Korean (ko)
Other versions
KR940008893B1 (en
Inventor
윤기완
Original Assignee
최근선
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 최근선, 주식회사 금성사 filed Critical 최근선
Priority to KR1019870015499A priority Critical patent/KR940008893B1/en
Publication of KR890010957A publication Critical patent/KR890010957A/en
Application granted granted Critical
Publication of KR940008893B1 publication Critical patent/KR940008893B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음No content

Description

캐패시터의 제작방법How to make capacitor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 의한 캐패시터를 나타낸 도면이다.2 is a view showing a capacitor according to the present invention.

Claims (1)

n-형 Si 기판상에 기본 산화층(native oxide)을 20 내지 100Å크기로 성장시키고 그위에 Ta2O5를 100Å내지 500Å두께로 성장시킨 다음 산화분위기에서 취약부분의 산화를 실시하여 부분적으로 기본 산화층이 두껍게 성장되도록 한 후 스퍼터링이나 증착에 의해 A1 또는 A1 합금을 전극으로서 형성시키는 것으로 이루어진 캐패시터의 제작방법.On the n-type Si substrate, a native oxide layer is grown to a size of 20 to 100 GPa, Ta 2 O 5 is grown to a thickness of 100 to 500 GPa on top of it, and oxidation of the weak part in the oxidation atmosphere is partially performed. A method for producing a capacitor comprising forming the A1 or A1 alloy as an electrode by sputtering or vapor deposition after the thick growth. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019870015499A 1987-12-31 1987-12-31 Method of manufacturing capacitor KR940008893B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019870015499A KR940008893B1 (en) 1987-12-31 1987-12-31 Method of manufacturing capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019870015499A KR940008893B1 (en) 1987-12-31 1987-12-31 Method of manufacturing capacitor

Publications (2)

Publication Number Publication Date
KR890010957A true KR890010957A (en) 1989-08-11
KR940008893B1 KR940008893B1 (en) 1994-09-28

Family

ID=19267779

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870015499A KR940008893B1 (en) 1987-12-31 1987-12-31 Method of manufacturing capacitor

Country Status (1)

Country Link
KR (1) KR940008893B1 (en)

Also Published As

Publication number Publication date
KR940008893B1 (en) 1994-09-28

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