KR940007980A - Impurity injection method of alloy for metal wiring - Google Patents

Impurity injection method of alloy for metal wiring Download PDF

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Publication number
KR940007980A
KR940007980A KR1019920015859A KR920015859A KR940007980A KR 940007980 A KR940007980 A KR 940007980A KR 1019920015859 A KR1019920015859 A KR 1019920015859A KR 920015859 A KR920015859 A KR 920015859A KR 940007980 A KR940007980 A KR 940007980A
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South Korea
Prior art keywords
layer
alloy
depositing
wiring
impurity
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KR1019920015859A
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Korean (ko)
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KR0126124B1 (en
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김헌도
조경수
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김주용
현대전자산업 주식회사
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Priority to KR1019920015859A priority Critical patent/KR0126124B1/en
Priority to JP5214066A priority patent/JPH06272056A/en
Publication of KR940007980A publication Critical patent/KR940007980A/en
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Publication of KR0126124B1 publication Critical patent/KR0126124B1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
    • C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
    • C23C10/28—Solid state diffusion of only metal elements or silicon into metallic material surfaces using solids, e.g. powders, pastes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
    • C23C28/021—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material including at least one metal alloy layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
    • C23C28/028—Including graded layers in composition or in physical properties, e.g. density, porosity, grain size

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemically Coating (AREA)

Abstract

본 발명은 반도체 소자 제조 공정중 매립된 금속층 증착 후에 불순물 층을 증착하여 그위에 배선용 금속을 증착한 후 고온 열처리 함으로써 아래의 불순물층이 배선용 금속으로 확산되어 들어가 특성이 개선된 배선용 합금으로 만드는 방법에 관한 것으로, 반도체기판(1) 상부에 절연층(2)을 도포하고 상기 절연층(2)을 정된 크기로 식각하여 콘택홀을 형성한 다음에 확산 방지 금속층(3)을 증착 하는 제1단계, 상기 제1단계 후에 불순물층(4)을 증착하는 제2단계, 상기 제2단계 후에 배선용 합금층(5)을 증착 하고 빛의 반사를 막기 위한 반사 방지층(7)을 증착하는 것을 특징으로 하는 금속 배선용 합금의 불순물 주입 방법에 관한 것이다.The present invention is a method of making an impurity layer after depositing a buried metal layer during the semiconductor device manufacturing process to deposit a wiring metal thereon, and then heat treatment at a high temperature to diffuse the impurity layer below into the wiring metal into a wiring alloy having improved characteristics. A first step of coating the insulating layer 2 on the semiconductor substrate 1, etching the insulating layer 2 to a predetermined size to form a contact hole, and then depositing a diffusion preventing metal layer 3, A second step of depositing the impurity layer 4 after the first step, and an antireflection layer 7 for depositing an alloy layer 5 for wiring and preventing reflection of light after the second step. It relates to an impurity implantation method of an alloy for wiring.

Description

금속 배선용 합금의 불순물 주입 방법Impurity injection method of alloy for metal wiring

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 따른 금속 배선용 합금의 불순물 주입 공정도.1 is an impurity implantation process diagram of an alloy for metal wiring according to the present invention.

Claims (2)

금속 배선용 합금의 불순물 주입 방법에 있어서, 반도체기판(1) 상부에 절연층(2)을 도포하고 상기 절연층(2)을 예정된 크기로 식각하여 콘택홀을 형성한 다음에 확산 방지 금속층(3)을 증착 하는 제1단계, 상기 제1단계 후에 불순물층(4)을 증착하는 제2단계, 상기 제2단계 후에 배선용 합금층(5)을 증착 하고 빛의 반사를 막기 위한 반사 방지층(7)을 증착하는 제3단계를 포함하는 것을 특징으로 하는 금속 배선용 합금의 불순물 주입 방법.In the impurity implantation method of an alloy for metal wiring, the insulating layer 2 is coated on the semiconductor substrate 1, the insulating layer 2 is etched to a predetermined size to form a contact hole, and then the diffusion preventing metal layer 3 After the first step of depositing the second step of depositing the impurity layer (4) after the first step, after the second step of depositing the anti-reflection layer (7) for depositing the wiring alloy layer (5) and the reflection of light Impurity implantation method of an alloy for metal wiring, comprising a third step of depositing. 제1항에 있어서, 상기 제2단계의 배선용 합금층(5) 증착 후에 상기 불순물층(4)이 상기 배선용 합금층(5)에 확산되도록 어닐링하는 단계를 더 포함하는 것을 특징으로 하는 금속 배선용 합금의 불순물 주입 방법.The alloy for metal wiring according to claim 1, further comprising annealing the impurity layer 4 to be diffused into the wiring alloy layer 5 after the deposition of the wiring alloy layer 5 in the second step. Impurity injection method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920015859A 1992-09-01 1992-09-01 Metal wiring molding method of semiconductor device KR0126124B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019920015859A KR0126124B1 (en) 1992-09-01 1992-09-01 Metal wiring molding method of semiconductor device
JP5214066A JPH06272056A (en) 1992-09-01 1993-08-30 Method of introducing impurity into alloy for metal wiring

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920015859A KR0126124B1 (en) 1992-09-01 1992-09-01 Metal wiring molding method of semiconductor device

Publications (2)

Publication Number Publication Date
KR940007980A true KR940007980A (en) 1994-04-28
KR0126124B1 KR0126124B1 (en) 1997-12-26

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KR1019920015859A KR0126124B1 (en) 1992-09-01 1992-09-01 Metal wiring molding method of semiconductor device

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KR (1) KR0126124B1 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629404A (en) * 1992-07-13 1994-02-04 Fujitsu Ltd Manufacture of semiconductor device

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JPH06272056A (en) 1994-09-27
KR0126124B1 (en) 1997-12-26

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