KR940007061B1 - Surface cleaning method and apparatus thereby - Google Patents
Surface cleaning method and apparatus thereby Download PDFInfo
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- KR940007061B1 KR940007061B1 KR1019910020153A KR910020153A KR940007061B1 KR 940007061 B1 KR940007061 B1 KR 940007061B1 KR 1019910020153 A KR1019910020153 A KR 1019910020153A KR 910020153 A KR910020153 A KR 910020153A KR 940007061 B1 KR940007061 B1 KR 940007061B1
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- Prior art keywords
- cleaning
- gas
- cleaning solution
- deionized water
- dilution
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- 238000004140 cleaning Methods 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims description 19
- 239000000243 solution Substances 0.000 claims abstract description 28
- 238000010790 dilution Methods 0.000 claims abstract description 15
- 239000012895 dilution Substances 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000008367 deionised water Substances 0.000 claims abstract description 12
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 12
- 229910021645 metal ion Inorganic materials 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 4
- 238000004090 dissolution Methods 0.000 claims description 4
- 239000003446 ligand Substances 0.000 claims description 4
- 239000004575 stone Substances 0.000 claims 1
- 238000001039 wet etching Methods 0.000 abstract 1
- 238000005406 washing Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 238000011109 contamination Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005202 decontamination Methods 0.000 description 2
- 230000003588 decontaminative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910001410 inorganic ion Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid group Chemical group C(CCCCCCC\C=C/CCCCCCCC)(=O)O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
제1도는 종래 기술의 세정 순서도를 나타낸 흐름도.1 is a flow chart showing a cleaning flowchart of the prior art.
제2도는 본 발명의 세정 방법을 설명하기 위한 세정 장치의 구성도.2 is a block diagram of a cleaning device for explaining the cleaning method of the present invention.
본 발명은 반도체 기판의 표면 세정 방법 및 그 장치에 관한 것으로서, 특히 CO2가스를 세정 용액 내에 용해시킴으로써 금속 이온의 리간드(Lgiand)를 CO-2 3로 치환시켜 용해도를 증가시킴으로써 금속오염을 제거하는 반도체 기판의 표면 세정 방법 및 그 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning a surface of a semiconductor substrate and an apparatus thereof, and more particularly, to remove metal contamination by dissolving a ligand of a metal ion (Lgiand) by CO- 2 3 by dissolving a CO 2 gas into a cleaning solution to increase solubility. A method for cleaning a surface of a semiconductor substrate and an apparatus therefor.
일반적으로 베어(bare) 실리콘이나 약간의 산화막이 자란 실리콘 웨이퍼를 로(爐)에 넣기 전에 화학적으로 세정을 하는데, 이때의 세정 방법으로는 RCA 방법이 알려져 있다. 이 기술은 처음에 유기질막 오염을 제거하고 다음으로 무기질 이온과 중금속을 세정하는 단계를 포함한다. 이 세정 공정은 알칼리 세정(NH4OH+H2O2+H2O)에 이어 산 세정(HCl+H2O2+H2O)을 하는 것을 과산화수소(H2O2)는 기판의 산화제로서의 역할을 하게 된다. 이때 전자를 SC-1, 후자를 SC-2 세정액이라고 한다. SC-1은 과산화수소의 산화 및 분해 작용을 이용하여 연속적인 약한 식각 작용으로 유기 오염막을 제거하는 한편, 금속(Au,Ag,Cu,Ni,Cd,Zn,Co,Cr등)은 암모니아의 착체(complex)로 만들어 제거하는 역할을 한다. SC-2는 주로 알칼리 금속과 전이금속(Al,Fe,Cu,Ni,Cr,Co)을 제거한다.Generally, a silicon wafer with bare silicon or some oxide film grown is chemically cleaned before being placed in a furnace. An RCA method is known as a cleaning method. This technique involves first removing organic membrane contamination and then cleaning the inorganic ions and heavy metals. This cleaning process is performed by alkaline cleaning (NH 4 OH + H 2 O 2 + H 2 O) followed by acid cleaning (HCl + H 2 O 2 + H 2 O). Hydrogen peroxide (H 2 O 2 ) It will serve as. The former is called SC-1 and the latter is called SC-2 cleaning liquid. SC-1 removes organic contaminant films by continuous weak etching by oxidizing and decomposing hydrogen peroxide, while metals (Au, Ag, Cu, Ni, Cd, Zn, Co, Cr, etc.) are complexes of ammonia. It is made into a complex and serves to remove it. SC-2 mainly removes alkali metals and transition metals (Al, Fe, Cu, Ni, Cr, Co).
상기 세정액 이외에도 초기 세정 또는 포토레지스트(photo resist) 제거후 세정방법으로 황산 보일(H2SO4/H2O22:1)이 널리 사용되고 있으며 희석 HF(1% HF-H2O)도 중요한 세정액의 하나이다.In addition to the cleaning solution, oleic sulfate (H 2 SO 4 / H 2 O 2 2: 1) is widely used as a cleaning method after initial cleaning or photoresist removal, and diluted HF (1% HF-H 2 O) is also important. It is one of the cleaning liquids.
이러한 RCA 세정의 순서도를 보면 제1도와 같다.The flow chart of such RCA cleaning is shown in FIG.
이와 같은 RCA 표준 세정은 W.Kern과 D.Puotinen이 발표한 RCA Rev., Vol 31, p.187,1970에 실려있다.This RCA standard cleaning is described in RCA Rev., Vol 31, p. 187,1970, published by W. Kern and D. Puotinen.
상기와 바와 같은 종래 기술에서는 금속 오염을 제거할 때 HCl+H2O2+H2O 또는 HF+H2O 혼합 용액을 사용하여 습식 세정을 하여 왔다. 그러나, 이러한 기존의 습식 세정 방법은 단순히 웨이퍼 표면을 식각하여 금속 오염을 제거함으로써 웨이퍼 표면에 손상(damage)을 줄 가능성이 많고 활성화된 웨이퍼 표면으로의 역 오염으로 인한 오염 제거력이 저하될 가능성을 내포하고 있다. 이는 희석 HF 세정시 SC-1이나 SC-2에 의하여 생성된 산화막으로 친수성 표면이 된 실리콘 웨이퍼가 HF 세정로 산화막이 제거됨에 따라 소수성으로 변하기 때문이다. 소수성 표면은 활성화 되어 있기 때문에 용액 및 환경으로부터의 파티클(particle)이나 유기물 및 금속이온 등에 오염되기 쉽다.In the prior art as described above, wet cleaning has been performed using HCl + H 2 O 2 + H 2 O or HF + H 2 O mixed solution to remove metal contamination. However, these conventional wet cleaning methods are more likely to damage the wafer surface by simply etching the wafer surface to remove metal contamination, and imply the possibility of decontamination due to back contamination to the activated wafer surface. Doing. This is because a silicon wafer that becomes a hydrophilic surface with an oxide film produced by SC-1 or SC-2 during hydrolysis of HF is changed to hydrophobic as the oxide film is removed by HF cleaning. Since the hydrophobic surface is activated, it is likely to be contaminated with particles, organic matter, and metal ions from the solution and the environment.
본 발명은 상기한 바와 같은 종래 기술의 문제점을 해결하기 위하여 안출된 것으로서, 본 발명의 목적은 세정 용액의 금속 오염 제거 능력을 극대화하고 활성화된 웨이퍼 표면으로의 역 오염을 방지함으로써 효과적인 세정을 수행할 수 있는 반도체 기판의 표면 세정 방법 및 그 장치를 제공하는데 있다.SUMMARY OF THE INVENTION The present invention has been made to solve the problems of the prior art as described above, and an object of the present invention is to maximize the metal decontamination capability of the cleaning solution and to prevent back contamination to the activated wafer surface to perform effective cleaning. The present invention provides a method for cleaning a surface of a semiconductor substrate and an apparatus thereof.
상기한 바와 같은 목적을 달성하기 위하여, 본 발명은 세정 기체를 용해시킨 탈이온수를 세정 용액으로 사용하는 정화된 가스 용해 시스팀 방법으로서 세정 용액 내에 용해시킨 CO2가스가 금속 이온의 리간드를 치환시키는 방법으로 웨이퍼 표면을 세정시키는 것을 특징으로 하는 반도체 기판의 표면 세정 방법을 제공한다.In order to achieve the above object, the present invention provides a purified gas dissolution system method using deionized water in which a cleaning gas is dissolved as a cleaning solution, wherein the CO 2 gas dissolved in the cleaning solution substitutes ligands of metal ions. There is provided a method for cleaning the surface of a semiconductor substrate, the surface of which is cleaned.
이러한 정화된 가스 용해 시스템 방법은 기존의 HF 처리 시스템에 CO2가스 공급관을 설치하여 이루어진다. 즉, CO2가스가 공급되면 HF+H2O+CO2(g)의 혼합물이 형성되어 이때 용해된 CO-2 3이온에 의하여 금속이온을 치환함으로써 세정 용액내에 금속이온의 용해도를 증가시키게 된다. 따라서, 금속 불순물(impurity)이 웨이퍼 표면으로부터 분리된다.This purified gas dissolution system method is achieved by installing a CO 2 gas supply line in an existing HF treatment system. That is, when CO 2 gas is supplied, a mixture of HF + H 2 O + CO 2 (g) is formed, thereby increasing the solubility of metal ions in the cleaning solution by displacing the metal ions by dissolved CO − 3 ions. . Thus, metal impurity is separated from the wafer surface.
이하 본 발명의 바람직한 실시예를 첨부한 도면에 따라 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
제2도는 본 발명의 세정 방법을 수행하기 위한 세정 장치의 개략 구성도를 나타낸 것이다. 이 세정 장치의 구성은 습식 세정을 진행시키기 위한 세정조(1) 및 원하는 희석비로 세정 용액을 제조하기 위한 희석조(2)와 상기 희석조(2)에 탈이온수[Deionized(DI) water]를 공급하기 위한 탈이온수 공급관(3), HF를 공급하기 위한 HF 공급관(4), CO2가스를 공급하기 위한 CO2(g) 공급관(5), 상기 희석조(2)에서 원하는 희석비로 제조된 세정 용액(Sl)을 세정조(1)로 공급하기 위한 세정 용액 공급관(6)으로 구성되어 있다. 또한,세정 공정이 종료된 후 희석조(2)내의 잔류 세정 용액(S1)을 배출시키기 위한 배출관(7)과 세정조(1)내의 세정 용액(S2)를 배출시키기 위한 배출관(8)을 또한 더 포함하고 있다.2 shows a schematic block diagram of a cleaning apparatus for performing the cleaning method of the present invention. The structure of this washing apparatus is a washing tank (1) for carrying out wet washing, a dilution tank (2) for producing a washing solution at a desired dilution ratio, and deionized (DI) water in the dilution tank (2). The deionized water supply pipe (3) for supply, the HF supply pipe (4) for supplying HF, the CO 2 (g) supply pipe (5) for supplying CO 2 gas, and the dilution tank (2) It consists of the washing | cleaning solution supply pipe | tube 6 for supplying washing | cleaning solution Sl to the washing tank 1. As shown in FIG. Further, after the cleaning process is completed, a discharge pipe 7 for discharging the residual cleaning solution S1 in the dilution tank 2 and a discharge pipe 8 for discharging the cleaning solution S2 in the cleaning tank 1 are also provided. It includes more.
한편, 상기 세정 장치에서 P는 펌프(pump)를 (f)는 여과장치(filter)를 나타낸다.In the cleaning apparatus, P denotes a pump and f denotes a filter.
탈이온수 공급관(3)을 통하여 유입되는 탈이온수가 희석조(2)에 일정량 공급된 후 CO2(g) 공급관(5)을 통하여 CO2(g)가 탈이온수에 포화될 때까지 일정시간 동안 공급된다. CO2(g)가 탈이온수에 포화된 후 HF공급관(4)를 통하여 HF가 일정량 공급되어 원하는 희석비의 HF+CO2(g)+H2O의 세정 용액(S1)을 제조한다. 제조된 세정 용액(S1)이 세정 용액 공급관(6)을 통하여 세정조(1)에 공급되면 세정을 위한 준비가 완료된다. 이렇게 하여 준비된 세정조(14)내의 세정 용액(S2)에 웨이퍼를 담금으로써 세정을 수행하게 된다.After a certain amount of deionized water introduced through the deionized water supply pipe (3) is supplied to the dilution tank (2), for a predetermined time until the CO 2 (g) is saturated in the deionized water through the CO 2 (g) supply pipe (5) Supplied. After CO 2 (g) is saturated in deionized water, a certain amount of HF is supplied through the HF supply pipe 4 to prepare a cleaning solution (S1) of HF + CO 2 (g) + H 2 O at a desired dilution ratio. When the prepared washing solution S1 is supplied to the washing tank 1 through the washing solution supply pipe 6, preparation for washing is completed. Cleaning is performed by immersing the wafer in the cleaning solution S2 in the cleaning bath 14 prepared in this way.
본 발명에 따르면, 세정 용액 내에서 금속 이온의 용해도를 증가시킬 수 있는 새로운 리간드를 정화된 가스 용해 시스팀 방법으로 공급하여 활성화된 웨이퍼 표면으로의 역오염을 방지함으로써 효과적인 습식 세정효과를 얻을 수 있는 잇점이 있다.According to the present invention, an effective wet cleaning effect can be obtained by supplying a new ligand capable of increasing the solubility of metal ions in the cleaning solution by using a purified gas dissolution system to prevent back contamination to the activated wafer surface. There is this.
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910020153A KR940007061B1 (en) | 1991-11-13 | 1991-11-13 | Surface cleaning method and apparatus thereby |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910020153A KR940007061B1 (en) | 1991-11-13 | 1991-11-13 | Surface cleaning method and apparatus thereby |
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| Publication Number | Publication Date |
|---|---|
| KR930011125A KR930011125A (en) | 1993-06-23 |
| KR940007061B1 true KR940007061B1 (en) | 1994-08-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019910020153A KR940007061B1 (en) | 1991-11-13 | 1991-11-13 | Surface cleaning method and apparatus thereby |
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| Country | Link |
|---|---|
| KR (1) | KR940007061B1 (en) |
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1991
- 1991-11-13 KR KR1019910020153A patent/KR940007061B1/en not_active IP Right Cessation
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| Publication number | Publication date |
|---|---|
| KR930011125A (en) | 1993-06-23 |
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