KR940003969B1 - Ceramic capacitor - Google Patents
Ceramic capacitor Download PDFInfo
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- KR940003969B1 KR940003969B1 KR1019910023258A KR910023258A KR940003969B1 KR 940003969 B1 KR940003969 B1 KR 940003969B1 KR 1019910023258 A KR1019910023258 A KR 1019910023258A KR 910023258 A KR910023258 A KR 910023258A KR 940003969 B1 KR940003969 B1 KR 940003969B1
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- cuo
- dielectric
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- 239000003985 ceramic capacitor Substances 0.000 title description 4
- 239000000203 mixture Substances 0.000 claims abstract description 21
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 13
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000010304 firing Methods 0.000 description 9
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/16—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture specially for use as rectifiers or detectors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Soft Magnetic Materials (AREA)
- Coils Or Transformers For Communication (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
본 발명은 적층칩 LC필터제조시 유전체부를 이루는 자기조성물에 관한 것으로, 특히 (TiO2)100-X(CuO)X계를 주성분으로 하고 SiO2및 MnO2가 소량 첨가되어 구성된 유전체부의 자기조성물에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic composition that forms a dielectric part when manufacturing a laminated chip LC filter. In particular, the present invention relates to a magnetic composition of a dielectric part composed of (TiO 2 ) 100-X (CuO) X- based components and a small amount of SiO 2 and MnO 2 added thereto. It is about.
종래의 온도보상용 세라믹 콘덴서 재료로 사용되고 있는 자기 조성물로는 CaTiO3, MgTiO3, La2O3-TiO2, BaO-TiO2계를 주성분으로 하는 재료가 알려지고 있으며, 이같은 조성의 재료에서는 조성을 적절히 선택하여 유전율과 온도계수를 광범위하게 사용하는 것이 가능한 반면에 소성온도를 1250℃ 이상으로 유지시켜야 하기 때문에 적층콘덴서의 제작시 내부전극으로 고융점 금속으로서 고가의 Pt나 Pt-Ag계 합금의 사용을 필요로 하여 제조비용이 높다는 문제점을 지니고 있다.As a magnetic composition used as a ceramic capacitor material for temperature compensation, a material mainly known as CaTiO 3 , MgTiO 3 , La 2 O 3 -TiO 2 , and BaO-TiO 2 is known. It is possible to use dielectric constant and temperature coefficient extensively, while firing temperature should be maintained above 1250 ℃. Therefore, it is necessary to use expensive Pt or Pt-Ag alloy as high melting point metal as internal electrode when manufacturing multilayer capacitor. As a result, the manufacturing cost is high.
한편, 기존의 세라믹 콘덴서용 자기조성물의 높은 소성온도에 따른 문제점을 감안하여 최근 (PbO)x(Nb2O5)y(Bi2O3)계와 (Bi2O3)x(Nb2O5)1-X계의 비교적 저온에서 소성이 이루어지는 자기조성물이 개발된 것으로 알려지고 있으나, 이들 조성물에 있어서는 Ag만으로 내부전극을 형성할 경우 Bi2O3의 융점 (823℃)의 Ag전극이 소성 온도에 비해 낮아서 Bi2O3와 금속Ag전극간의 반응과 상호 확산이 발생하여 적층칩 형태로 제조된 소자의 신뢰성과 Q값(Q-factor)에 좋지못한 영향을 미치게 되는 결점이 있다.On the other hand, in consideration of the problems caused by the high firing temperature of the conventional magnetic composition for a ceramic capacitor, (PbO) x (Nb 2 O 5 ) y (Bi 2 O 3 ) type and (Bi 2 O 3 ) x (Nb 2 O 5 ) It is known that a magnetic composition which is fired at a relatively low temperature of 1-X type has been developed. However, in these compositions, when an internal electrode is formed of only Ag, Ag electrode having a melting point of Bi 2 O 3 (823 ° C) is fired. Due to the low temperature, the reaction and interdiffusion between Bi 2 O 3 and the metal Ag electrode occurs, which adversely affects the reliability and Q-value of the device manufactured in the form of a stacked chip.
이와 같이, 전극의 소성온도에 비해 유전체의 소성온도가 낮을 경우에는 재료의 특성이 저하되고 등가직렬 저항이 높아지게 되므로, 적층칩 세라믹스 콘덱서 제조시에는 내부전극과 동시소성되는 유전체 재료의 소성온도를 내부전극의 소성온도와 일치시키는 것이 중요한 요소로 적용하게 된다.As such, when the firing temperature of the dielectric is lower than the firing temperature of the electrode, the characteristics of the material are lowered and the equivalent series resistance is increased. Matching the firing temperature of the internal electrode is an important factor.
따라서, 본 발명은 내부전극으로 사용되는 Ag전극의 소성온도와 일치하는 소성온도범위를 갖는 적층칩 LC필터용 유전체부 자기조성물을 제공하는 데 목적이 있다.Accordingly, an object of the present invention is to provide a dielectric part magnetic composition for a laminated chip LC filter having a firing temperature range that matches the firing temperature of an Ag electrode used as an internal electrode.
본 발명의 유전체부 자기조섬물은 (TiO2)100-X(CuO)X계를 기본조성(이때, 1≤x≤5, x : wt%)으로 하고, 여기에 SiO2와 MnO2가 소량 첨가된 것으로 900-950℃의 소성온도를 나타낸다.In the dielectric portion self-coating of the present invention, the (TiO 2 ) 100-X (CuO) X- based system is a basic composition (where 1 ≦ x ≦ 5, x: wt%), and a small amount of SiO 2 and MnO 2 are present. As added, a firing temperature of 900-950 ° C is shown.
본 발명의 유전체부 자기조성물에서 첨가제로 사용되는 SiO2와 MnO2의 함량은 각각 1wt% 이하의 함량을 유지하는 것이 바람직하고 이같은 SiO2와 MnO2의 첨가에 의해 특히 Q값을 비롯한 유전을 특성의 향상을 가져오게 된다.In the dielectric composition of the present invention, the content of SiO 2 and MnO 2 used as an additive is preferably maintained at a content of 1 wt% or less, and the addition of SiO 2 and MnO 2 may be used to characterize the dielectric, including the Q value. Will result in an improvement.
본 발명의 적층칩 LC필터제조용 자기조성물을 이용하여 온도보상용 적층 세라믹 콘덴서를 제작하는 경우에는 순 Ag전극의 사용이 가능하여 제조비용을 낮출 수 있고, Ag전극과 자기조성물의 소성온도 일치에 따라 상호 확산의 발생이 배제되어 신뢰성의 향상이 기대될 뿐만아니라 높은 Q값과 적은 부(-)의 온도계수를 나타내어 양호한 소자특성을 지니는 이점이 있다.When manufacturing a multilayer ceramic capacitor for temperature compensation using the magnetic composition for manufacturing a laminated chip LC filter of the present invention, it is possible to use a pure Ag electrode, thereby lowering the manufacturing cost, and in accordance with the firing temperature of the Ag electrode and the magnetic composition. It is not only expected to improve the reliability by eliminating the occurrence of interdiffusion, but also has the advantage of having good device characteristics by exhibiting a high Q value and a small negative temperature coefficient.
이하, 본 발명의 자기조성물을 이용하여 적층칩 LC필터를 제조하는 과정에 대한 실시예를 들어 본 발명에 대한 더욱 구체적으로 설명하면 다음과 같다.Hereinafter, an embodiment of a process of manufacturing a stacked chip LC filter using the magnetic composition of the present invention will be described in more detail with reference to the present invention.
[실시예]EXAMPLE
먼저 적층칩 LC필터제조용 원료로서 아래의 표 1 및 표 2에 나타나 있는 조성의 TiO2, CuO, MnO2및 SiO2를 평량하여 폴리에틸렌 자(Jar)중에서 지르코니아 볼을 사용하고 알콜을 분산매로하여 24시간 동안 혼합하였다.First, TiO 2 , CuO, MnO 2 and SiO 2 of the composition shown in Tables 1 and 2 below were used as raw materials for the manufacture of multilayer chip LC filters, using zirconia balls in polyethylene jars and alcohol as a dispersion medium. Mix for hours.
혼합이 완료된 분말을 건조한 후 750-850℃에서 2시간 동안 하소한 다음 다시 폴리에틸렌 자에서 24시간 재분쇄하고 전기건조기를 이용하여 건조하였다.The mixed powder was dried and calcined at 750-850 ° C. for 2 hours, and then pulverized again in polyethylene jar for 24 hours and dried using an electric dryer.
이와 같은 과정을 통해 얻어진 분말에 PVA 바인더를 첨가하여 조립으로 만든 다음 1000㎏/㎠의 압력을 가하여 펠릿(pellet)으로 성형하였다.PVA binder was added to the powder obtained through this process to make granules, and then molded into pellets by applying a pressure of 1000 kg / cm 2.
다음, 이 펠릿성형체를 900-950℃에서 2시간동안 소성하여 얻어진 소결체를 #100, #600, #1200의 다이아몬드휠(Diamond Wheel)로 양면에 대한 염마를 행하고나서 스크린인쇄(Screen Printing)로 Ag페이스트를 도포한 뒤 590℃에서 10분간에 걸쳐 온 소부를 함으로써 전극으로 형성시켰다.Next, the pellet molded body was calcined at 900-950 ° C. for 2 hours, and then sintered on both sides with diamond wheels of # 100, # 600, and # 1200, and then Ag was printed by screen printing. After the paste was applied, it was formed into electrodes by baking over 10 minutes at 590 ° C.
이와 같은 공정을 통하여 얻어진 시편들에 대한 HP4194A의 측정 기기를 사용하여 1MHz의 주파수에서 유전율 및 Q값과 유전율의 온도계수를 측정하였던 바, 그 결과는 표 1, 2에 나타나 있다.Using the HP4194A measuring instrument for the specimens obtained through this process, the dielectric constant and Q value and the temperature coefficient of the dielectric constant were measured at a frequency of 1 MHz. The results are shown in Tables 1 and 2.
[표 1]TABLE 1
[표 2]TABLE 2
상기 표 1에 나타난 것과 같이 (TiO2)100-X(CuO)X에서 x가 중가함에 따라 치말화의 영향으로 유전율은 증가하게 되나, Q값은 1wt%까지는 증가를 하다가 그 이상 첨가할때는 감소하게 된다. 그러나 CuO만 첨가한 경우에는 Q값을 100이하로 낮기 때문에 적층칩 LC필터제조시 유전체 성분으로의 사용에는 부적절하다.As shown in Table 1, as the weight of (TiO 2 ) 100-X (CuO) X increases, the permittivity increases due to the effect of dentification, but the Q value increases up to 1wt% but decreases when added more. do. However, when only CuO is added, the Q value is lower than 100, which is not suitable for use as a dielectric component when manufacturing a laminated chip LC filter.
한편, 표 2에는 (TiO2)100-X(CuO)X에 MnO2, SiO2를 첨가했을 때의 유전율, Q값, 온도계수가 나타나 있다. TiO2기지에 CuO를 3wt%첨가한 다음 SiO2를 0∼1wt% 첨가하여 900℃, 2시간으로 소결한 시편의 유전상수값은 SiO2와 첨가량이 증가함에 따라 계속 감소함을 보여주고 있다. SiO2의 첨가량에 따른 Q값은 0.4wt%부터 계속 증가함을 보여주고 있다. SiO2함량이 0.4wt% 일때가 가장 좋은 특성을 보이고 있으나 SiO2첨가했을 경우에는 유전손실이 상당히 큰 편이기 때문에 칩 유전체 조성으로는 적합하지 않다.In Table 2, the dielectric constant, Q value, and temperature coefficient when MnO 2 and SiO 2 are added to (TiO 2 ) 100-X (CuO) X are shown. The addition of 3wt% CuO on TiO 2 base, and then the dielectric constant of the sample sintered to SiO 2 to 900 ℃, 2 hours, added 0~1wt% has shown that continue to decrease as the SiO 2 and the addition amount increased. The Q value according to the amount of SiO 2 added continues to increase from 0.4wt%. When SiO 2 content is 0.4wt%, it shows the best characteristics. However, when SiO 2 is added, dielectric loss is quite large, so it is not suitable as a chip dielectric composition.
그러나, TiO2에 CuO를 3wt%, SiO2를 0.4wt%, MnO2를 0∼1wt 첨가하면 유전상수는 95-105의 범위를 가지며 Q값은 600-1135의 조성물을 얻을 수 있다. MnO2를 0.6wt%이상 첨가하였을 경우에는 유전상수와 Q값이 저하됨을 볼 수 있다.However, 3wt% of CuO on TiO 2, 0.4wt% of SiO 2, was added MnO 2 0~1wt dielectric constant has a range of 95-105 Q value can be obtained a composition of 600-1135. It can be seen that the dielectric constant and Q value are lowered when MnO 2 is added at 0.6wt% or more.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910023258A KR940003969B1 (en) | 1991-12-17 | 1991-12-17 | Ceramic capacitor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910023258A KR940003969B1 (en) | 1991-12-17 | 1991-12-17 | Ceramic capacitor |
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| Publication Number | Publication Date |
|---|---|
| KR930014656A KR930014656A (en) | 1993-07-23 |
| KR940003969B1 true KR940003969B1 (en) | 1994-05-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR1019910023258A KR940003969B1 (en) | 1991-12-17 | 1991-12-17 | Ceramic capacitor |
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| KR (1) | KR940003969B1 (en) |
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