KR940002930A - 폴리실리콘 반도체소자 및 그 제조방법 - Google Patents

폴리실리콘 반도체소자 및 그 제조방법 Download PDF

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Publication number
KR940002930A
KR940002930A KR1019920012992A KR920012992A KR940002930A KR 940002930 A KR940002930 A KR 940002930A KR 1019920012992 A KR1019920012992 A KR 1019920012992A KR 920012992 A KR920012992 A KR 920012992A KR 940002930 A KR940002930 A KR 940002930A
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KR
South Korea
Prior art keywords
polysilicon
semiconductor device
polysilicon layer
layer
insulating substrate
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KR1019920012992A
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English (en)
Inventor
안병철
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이헌조
주식회사 금성사
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Priority to KR1019920012992A priority Critical patent/KR940002930A/ko
Publication of KR940002930A publication Critical patent/KR940002930A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

본 발명은 폴리실리콘 반도체소자 및 그 제조방법에 관한 것으로, 종래 폴리실리콘 반도체소자는 폴리실리콘 박막내에 비정질 실리콘 또는 마이크로 크리스탈 실리콘등의 혼합상태가 존재하여 이 막으로 반도체소자를 제조할 경우 n채널은 40㎤/V.S P채널은 20㎤/V.S이상의 전계효과 이동도를 지닌 트랜지스터를 만드는데 한계가 생기고, 절연기판에 직접 폴리실리콘을 형성함으로써 폴리실리콘의 그레인(grain)은 초대 0.01㎛ 정도의 입경을 갖게 된다
즉 그레인이 작아짐에 따라 전자 또는 정공이 트랩으로 작용하는 그레인 경계인 면적이 커지게 되어 반도체소자의 특성을 향상시키는데 한계를 갖는 문제점이 있다.
본 발명은 이러한 문제점을 해결하기 위하여 절연기판위에 이중구조로된 폴리실리콘을 사용함으로써, 이중구조로된 폴리실리콘의 결정성을 향상시킬 수 있을 뿐만 아니라 기판으로부터 가동이온이 투입되는 것을 방지할 수 있어 반도체소자의 특성을 향상시킬 수 있게 된다.

Description

폴리실리콘 반도체소자 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명 폴리실리콘 반도체소자의 단면도,
제5도는 본 발명 폴리실리콘 반도체소자의 폴리실리콘 이중구조 단면도,
제6도는 제5도에 따른 실시예의 밴드 다이아그램 구조도.

Claims (7)

  1. 절연기관(1)위에 비정질실리콘층(2)을 증착한후 그 비정질실리콘층(2)에 엑시머레이저(Eximer Laser)를 조사시켜 폴리실리콘화하여 제1폴리실리콘층(3)으로 변화시키고, 그 제1폴리실리콘층(3)위에 제2폴리실리콘층(4)을 증착한 후 상기 제1, 제2폴리실리콘층(3),(4)을 식각하여 패턴을 형성하고, 그 제2폴리실리콘층(4)위에 절연막(5)을 증착한 후 패턴을 형성한 다음 패턴형성에 따라 노출된 상기 제2폴리실리콘층(4)에 3족이나 5족 분순물을 도핑하고. 상기 절연막(5)위에 게이트전극(6), 소오스-드레인전극(7)을 증착한 후 패턴을 형성하여 제조됨을 특징으로 하는 폴리실릭콘 반도체소자 제조방법.
  2. 제1항에 있어서, 비정질실리콘(2)에 B,P,As 불순물이 1016-1019/㎤로 도핑됨을 특징으로 하는 폴리실리콘 반도체소자 제조방법.
  3. 제1항에 있어서, 제2폴리실리콘층(4)을 RPCVD 방법으로 증착시킹을 특징으로 하는 폴리실리콘 반도체소자 제조방법.
  4. 절연기판(1)위에 패턴이 형성된 제1폴리실리콘층(3)이 형성되고, 그 위에 B나 P이온이 주입된 제2폴리실리콘층(4)이 형성되며, 상기 절연기판(1)과 제2폴리실리콘(4)위에 패턴 형성된 절연막(5)이 형성되고, 그 위에 게이트전극(6)과 소오스-드레인전극(7)이 형성된 구조로 제조됨을 특징으로 하는 폴리실리콘 반도체소자.
  5. 제4항에 있어서, 제1폴리실리콘층(3)은 P,n형으로 구성하고, 제2폴리실리콘층(4)은 진성반도체, P.n형으로 구성하여 제1폴리 실리콘층(3)과 제2폴리실리콘층 (4)간의 접합이거나 제1폴리실리콘층(3)과 제2폴리실리콘층(4) 내부에서의 접합을 이용하는 것을 특징으로 하는 폴리실리콘 반도체소자.
  6. 제4항에 있어서, 저1폴리실리콘층(3)을 P형으로 형성하고, 제2폴리실리콘층(4)을 진성반도체층으로 형성하여 절연기판(1)으로부터 가동이온(Na+, K+, Li+등)의 투입을 방지하도록 하는 것을 특징으로 하는 폴리실리콘 반도체소자.
  7. 절연기판(1)위에 P나 B이온이 부분적으로 도핑되어 패턴이 형성된 제1폴리실리콘층(3)이 형성되고, 그 위에 패턴 형성된 제2폴리실리콘층(4)이 형성되고, 그 위에 절연막(5)이 형성된 후 그위에 게이트전극(6) 소오스-드레인전극(7)이 형성된 구조로 제조됨을 특징으로 하는 플리실리콘 반도체소자.
    ※ 참고사항：최초출원 내용에 의하여 공개하는 것임.
KR1019920012992A 1992-07-21 1992-07-21 폴리실리콘 반도체소자 및 그 제조방법 KR940002930A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920012992A KR940002930A (ko) 1992-07-21 1992-07-21 폴리실리콘 반도체소자 및 그 제조방법

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KR1019920012992A KR940002930A (ko) 1992-07-21 1992-07-21 폴리실리콘 반도체소자 및 그 제조방법

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KR940002930A true KR940002930A (ko) 1994-02-19

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