KR940002873A - 기판 위에 자성재료를 증착하는 기구 - Google Patents

기판 위에 자성재료를 증착하는 기구 Download PDF

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Publication number
KR940002873A
KR940002873A KR1019930012760A KR930012760A KR940002873A KR 940002873 A KR940002873 A KR 940002873A KR 1019930012760 A KR1019930012760 A KR 1019930012760A KR 930012760 A KR930012760 A KR 930012760A KR 940002873 A KR940002873 A KR 940002873A
Authority
KR
South Korea
Prior art keywords
chamber
magnetic material
inches
substrate
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019930012760A
Other languages
English (en)
Korean (ko)
Inventor
통 후아-칭
제이. 뉴우만 존
제임스 우 혼-시안
Original Assignee
다니엘 에이. 네펠라
리드-라이트 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 다니엘 에이. 네펠라, 리드-라이트 코포레이션 filed Critical 다니엘 에이. 네펠라
Publication of KR940002873A publication Critical patent/KR940002873A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Magnetic Films (AREA)
  • Plasma Technology (AREA)
  • Magnetic Heads (AREA)
KR1019930012760A 1992-07-10 1993-07-07 기판 위에 자성재료를 증착하는 기구 Withdrawn KR940002873A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7/911,457 1992-07-10
US07/911,457 US5290416A (en) 1992-07-10 1992-07-10 Unidirectional field generator

Publications (1)

Publication Number Publication Date
KR940002873A true KR940002873A (ko) 1994-02-19

Family

ID=25430264

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930012760A Withdrawn KR940002873A (ko) 1992-07-10 1993-07-07 기판 위에 자성재료를 증착하는 기구

Country Status (6)

Country Link
US (1) US5290416A (enExample)
EP (1) EP0579114A1 (enExample)
JP (1) JPH06224065A (enExample)
KR (1) KR940002873A (enExample)
CN (1) CN1083870A (enExample)
TW (1) TW237550B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5804041A (en) * 1996-06-10 1998-09-08 Sony Corporation Method and apparatus for forming a magnetically oriented thin film
US6545580B2 (en) 1998-09-09 2003-04-08 Veeco Instruments, Inc. Electromagnetic field generator and method of operation
FR2838020B1 (fr) * 2002-03-28 2004-07-02 Centre Nat Rech Scient Dispositif de confinement de plasma
US7750522B2 (en) * 2006-07-18 2010-07-06 Danotek Motion Technologies Slow-speed direct-drive generator
US11488814B2 (en) 2018-10-29 2022-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Permeance magnetic assembly

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4963524A (en) * 1987-09-24 1990-10-16 Semiconductor Energy Laboratory Co., Ltd. Sputtering device for manufacturing superconducting oxide material and method therefor
JPH0649937B2 (ja) * 1987-12-17 1994-06-29 株式会社日立製作所 磁性膜形成装置
JPH0814021B2 (ja) * 1989-07-20 1996-02-14 松下電器産業株式会社 スパッタ装置
US5045166A (en) * 1990-05-21 1991-09-03 Mcnc Magnetron method and apparatus for producing high density ionic gas discharge

Also Published As

Publication number Publication date
CN1083870A (zh) 1994-03-16
JPH06224065A (ja) 1994-08-12
EP0579114A1 (en) 1994-01-19
TW237550B (enExample) 1995-01-01
US5290416A (en) 1994-03-01

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19930707

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid