KR940001587A - Low noise frequency conversion circuit - Google Patents

Low noise frequency conversion circuit Download PDF

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Publication number
KR940001587A
KR940001587A KR1019920011265A KR920011265A KR940001587A KR 940001587 A KR940001587 A KR 940001587A KR 1019920011265 A KR1019920011265 A KR 1019920011265A KR 920011265 A KR920011265 A KR 920011265A KR 940001587 A KR940001587 A KR 940001587A
Authority
KR
South Korea
Prior art keywords
fet
drain
coupler
pass filter
strip line
Prior art date
Application number
KR1019920011265A
Other languages
Korean (ko)
Other versions
KR950010248B1 (en
Inventor
배인철
Original Assignee
황선두
삼성전기 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 황선두, 삼성전기 주식회사 filed Critical 황선두
Priority to KR1019920011265A priority Critical patent/KR950010248B1/en
Publication of KR940001587A publication Critical patent/KR940001587A/en
Application granted granted Critical
Publication of KR950010248B1 publication Critical patent/KR950010248B1/en

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H03D7/125—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Superheterodyne Receivers (AREA)
  • Microwave Amplifiers (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)

Abstract

믹서단과 발진단을 하나의 FET로 공용 설계하여 LNB회로패턴 및 구성소자의 축소에 따른 저가격 소형화를 가능하게 하는 저잡음 주파수 변환회로는 LNA(110)와 밴드패스필터(120)를 차례로 거친 위성방송 RF신호가형태의 스트립 라인 패턴을 가지는 커플러(130)에 입력되게 구성하고, 상기 커플러(130)의 상단스트립 라인에 인접시켜 GaAs FET(160)의 게이트 스트립라인(140)을 평행배치하고, 상기 케이트 스트릴라인(140)에 인접시켜 유전체 공진자(150)를 배치 하고, 상기 FET(160)의 드레인측 출력소자(200)에 나타난 IF신호는 로우패스필터(180)와 IF앰프(190)를 거쳐 출력되게 구성하고, 출력소자(200)를 거쳐 FET(160)의 드레인측에 인가되는 드레인전원(VD)은 쵸크(210)를 거쳐 인가되게 구성한다.The low-noise frequency conversion circuit, which allows the mixer stage and the oscillation stage to be used as a single FET and enables the low-cost miniaturization according to the reduction of the LNB circuit pattern and the components, is a satellite broadcasting RF which passes through the LNA 110 and the band pass filter 120 in order Signal It is configured to be input to the coupler 130 having a strip line pattern of the shape, and adjacent to the top strip line of the coupler 130 to arrange the gate strip line 140 of the GaAs FET 160 in parallel, the Kate strila The dielectric resonator 150 is disposed adjacent to the phosphorus 140, and the IF signal displayed on the drain output device 200 of the FET 160 is output through the low pass filter 180 and the IF amplifier 190. The drain power source V D applied to the drain side of the FET 160 via the output element 200 is configured to be applied via the choke 210.

Description

저잡읍 주파수 변환회로Low noise town frequency conversion circuit

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 종래의 저잡음 주파수 변환회로도,1 is a conventional low noise frequency conversion circuit diagram,

제2도는 본 발명의 저잡음 주파수 변환회로도.2 is a low noise frequency conversion circuit diagram of the present invention.

Claims (1)

LAN(110)와 밴드패스필터 (120)를 차례로 거친 위성방송 RF신호가형태의 스트립라인 패턴을 가지는 커플러(130)에 입력되게 구성하고, 상기 커플러 (130)의 상단 스트팁라인에 인접시켜 GaAs FET(160)의 게이트 스트립라인(140)을 평행배치하고, 상기 게이트 스트립라인 (140)에 인접시켜 유전체공진자(150)를 배치하고 상기 FET(160)의 드레인측 출력소자(200)에 나타난 IF신호는 로우패스필터 (180)와 IF앰프(190)를 거쳐 출력되게 구성하고, 출력소자(200)를 거쳐 FET(160)의 드레인측에 인가되는 드레인 전원(VD)은 쵸크(210)를 거쳐 인가되게 구성하는 것을 특징으로 하는 저잡음 주파수 변환회로.The satellite broadcasting RF signal which passes through the LAN 110 and the band pass filter 120 in order It is configured to be input to the coupler 130 having a stripline pattern of the shape, the gate stripline 140 of the GaAs FET 160 is arranged in parallel to the upper stripline line of the coupler 130, the gate strip The dielectric resonator 150 is disposed adjacent to the line 140 and the IF signal displayed on the drain output device 200 of the FET 160 is output through the low pass filter 180 and the IF amplifier 190. And a drain power source (V D ) applied to the drain side of the FET (160) via the output element (200) is configured to be applied via the choke (210). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920011265A 1992-06-26 1992-06-26 Low noise frequency transitting circuit KR950010248B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920011265A KR950010248B1 (en) 1992-06-26 1992-06-26 Low noise frequency transitting circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920011265A KR950010248B1 (en) 1992-06-26 1992-06-26 Low noise frequency transitting circuit

Publications (2)

Publication Number Publication Date
KR940001587A true KR940001587A (en) 1994-01-11
KR950010248B1 KR950010248B1 (en) 1995-09-12

Family

ID=19335351

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920011265A KR950010248B1 (en) 1992-06-26 1992-06-26 Low noise frequency transitting circuit

Country Status (1)

Country Link
KR (1) KR950010248B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8729439B2 (en) 2008-12-05 2014-05-20 Samsung Electronics Co., Ltd. Microwave oven with door change device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8729439B2 (en) 2008-12-05 2014-05-20 Samsung Electronics Co., Ltd. Microwave oven with door change device

Also Published As

Publication number Publication date
KR950010248B1 (en) 1995-09-12

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