KR930022569A - Method for manufacturing solid imaging apparatus - Google Patents

Abstract

In the method of manufacturing a solid-state image pickup device, a protective layer protecting the upper surface of the solid-state image pickup device is deposited at a temperature of 450 ° C. or lower, and a SiH ₄ + H ₂ gas mixture is deposited as a silicon nitride film by chemical vapor deposition. . Therefore, H ⁺ combines with Si ⁺ present on the interface between the semiconductor substrate on the photodiode and the coral film to reduce the dark current of the solid-state image pickup device, thus improving the uniformity between pixels of the solid-state image pickup device. It can prevent and improve the reliability in low light.

Description

Manufacturing method of solid state imaging device

As this is a public information case, the full text was not included.

3a to c are manufacturing process diagrams of the line A-A section of FIG. 1 according to the present invention.

Claims (8)

Forming a first potential well layer with a first conductivity type impurity on the surface of the semiconductor substrate, forming a second potential well layer with a high concentration of first conductivity type impurity on one side of the first potential well layer; And forming a photodiode with impurities of a second conductivity type on one side of the first potential well layer so as to be in contact with the second potential well layer, and the first potential well layer on the second potential well layer at all times. Forming a vertical charge transmitter with an impurity of a second conductivity type so as to be spaced apart by a predetermined interval, and forming a channel separation layer with an impurity of high conductivity of a first conductivity type on the other side of the photodiode on the first potential well layer And forming a first insulating film on a surface of the semiconductor substrate, forming a first gate on a surface of the first insulating film on the channel isolation layer and the vertical charge transfer device, and forming an upper gate and a side surface of the first gate. To form a second insulating film Forming a transfer gate as a second conductive impurity on a second potential well layer between the first potential well layer and the vertical charge transfer element, and a second gate on the second insulating layer on the first gate. Forming a photodiode upper layer with a high concentration of a first conductivity type impurity on the surface of the photodiode between the transfer gate and the channel separation layer, and covering the first and second gates And forming a light shielding film on the second insulating film, forming a third insulating film on the entire surface of the structure, forming a metal wiring on the third insulating film on the vertical charge carrier, and A method of manufacturing a solid state image pickup device, comprising: forming a light shielding film on the first and second insulating films so as to surround the first and second gates on the entire surface; and forming a protective layer on the entire surface of the structure. In the above, Method for manufacturing a solid-state imaging device including a step of forming a layer of a silicon nitride film by chemical vapor deposition method. The method for manufacturing a solid state image pickup device according to claim 1, wherein the first conductive type is P type and the second conductive type is N type. The method of manufacturing a solid state image pickup device according to claim 1, wherein said first, second and third insulating films are formed by one method arbitrarily selected from the group consisting of physical vapor deposition, chemical vapor deposition and thermal oxidation. The method of manufacturing a solid state image pickup device according to claim 1, wherein said first, second, and third insulating films are formed of one insulating material arbitrarily selected from the group consisting of silicon oxide and silicon nitride. The method of manufacturing a solid state image pickup device according to claim 1, wherein said first and second gates are formed of polycrystalline silicon. The method for manufacturing a solid state image pickup device according to claim 1, wherein the light blocking film is formed of one selected from the group consisting of Al, W and respective alloys. The method of manufacturing a solid state image pickup device according to claim 1, wherein said metal wiring is formed of Al. The method for manufacturing a solid state image pickup device according to claim 1, wherein the protective layer is formed of a silicon nitride film using a SiH ₄ + H ₂ gas mixture as a deposition medium by a PECVD method at a temperature of 400 ° C. or less. ※ Note: The disclosure is based on the initial application.