KR930017216A

KR930017216A - Method of manufacturing thin film transistor

Info

Publication number: KR930017216A
Application number: KR1019920000624A
Authority: KR
Inventors: 한창욱
Original assignee: 이헌조; 주식회사 금성사
Priority date: 1992-01-17
Filing date: 1992-01-17
Publication date: 1993-08-30

Abstract

본 발명은 박막트랜지스터의 제조방법에 관한 것으로, 종래에는 기판위에 게이트전극과 게이트절연막, 비정질실리콘층, n⁺비정질실리콘층 및 소스, 소스드레인전극을 증착 및 사진식각공정으로 형성후 n⁺비정질실리콘층을 건식식각법으로 제거하여 비정질실리콘층의 손상으로 문턱전압을 높여 성능을 저하시키는 문제점이 있었다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a thin film transistor. In the related art, after forming a gate electrode, a gate insulating film, an amorphous silicon layer, an n ⁺ amorphous silicon layer, a source, and a source drain electrode on a substrate by deposition and photolithography, n ⁺ amorphous silicon is formed. By removing the layer by dry etching, there was a problem of lowering the performance by increasing the threshold voltage due to damage of the amorphous silicon layer.

본 발명은 상기와 같은 문제점을 감안하여 건식식각법으로 제거하여 n비정질실리콘층을 양극산화법을 이용하여 산화막을 형성비정질실리콘층의 손상을 방지하여 문턱전압 강하등의 트랜지스터의 성능을 향상시키는 효과가 있다.The present invention removes by the dry etching method in view of the above problems n Forming an Oxide Film by Using an Anodic Oxidation Amorphous Silicon Layer Prevents damage to the amorphous silicon layer, thereby improving the performance of a transistor such as a threshold voltage drop.

Description

Method of manufacturing thin film transistor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명의 실시장치도.3 is an embodiment of the present invention.

Claims

The gate electrode 3 is formed on the glass substrate 1 by a photolithography process, and the gate insulating film 4, the amorphous silicon layer 5, and the n ⁺ amorphous silicon layer are formed on the gate electrode 3 by a continuous deposition method. 6) forming a source and drain electrode (8) on the n ⁺ amorphous silicon layer (6) by deposition and photolithography, and then removing the n ⁺ amorphous silicon layer (6) by dry etching. A method of manufacturing a thin film transistor in which an oxide film 9 is formed by anodizing the n ⁺ amorphous silicon layer 6.

※ Note: The disclosure is based on the initial application.