KR930024190A - Thin film transistor of liquid crystal display and manufacturing method - Google Patents

Abstract

The thin film transistor of the liquid crystal display device is formed so as to be buried in the insulating layer to improve the step coverage of the TFT, and only one lift-off process and one photo etching process are performed. And defect generation at the interface of the drain electrode. Therefore, the manufacturing process of the thin film transistor of the liquid crystal display device is simple and the reliability thereof can be improved.

Description

Thin film transistor of liquid crystal display and manufacturing method

Since this is an open matter, no full text was included.

3 (A) to (D) are process charts of manufacturing a thin film transistor of the liquid crystal display device according to the present invention.

Claims (11)

A thin film transistor of a liquid crystal display device formed on an insulating substrate, comprising: an insulating substrate made of glass, a gate electrode formed on one side of the upper portion of the insulating substrate, a gate insulating film formed on the gate electrode, and the gate insulating film A semiconductor layer formed on an upper portion of the semiconductor layer, a high concentration semiconductor layer formed on both ends of the semiconductor layer, an insulating layer formed to surround side surfaces of the gate electrode, the gate insulating film, and the semiconductor layer, one side of the high concentration semiconductor layer, and the A thin film transistor of a liquid crystal display device, comprising: a source electrode formed on the surface of the insulating layer in contact with the insulating layer; and a drain electrode formed on the surface of the insulating layer in contact with the other side of the high concentration semiconductor layer. The thin film transistor of claim 1, wherein the gate electrode is made of one metal selected from the group consisting of Al, Cr or Ta. The thin film transistor of claim 1, wherein the gate insulating layer is one insulating material selected from the group consisting of silicon oxide and silicon nitride. The thin film transistor of claim 1, wherein the semiconductor layer is one semiconductor selected from the group consisting of polycrystalline silicon, amorphous silicon, and hydrogenated amorphous silicon. The thin film transistor of claim 1, wherein the high concentration semiconductor layer is made of n ⁺ type polycrystalline silicon, amorphous silicon, or hydrogenated amorphous silicon. The thin film transistor of claim 1, wherein the insulating layer is one insulating material selected from the group consisting of silicon oxide and silicon nitride. The thin film transistor of claim 1, wherein the source electrode and the drain electrode are made of one metal selected from the group consisting of Al, Cr or Ta. A method of manufacturing a thin film transistor of a liquid crystal display device, the method comprising: forming an insulating layer on an entire surface of an insulating substrate; forming a first photosensitive film pattern on the insulating layer to expose a portion of the insulating layer; Forming a groove by removing a predetermined depth of the insulating layer exposed by the photosensitive film pattern, sequentially forming a gate electrode, a gate insulating film, a semiconductor layer, and a high concentration semiconductor layer on the entire surface of the structure; and the first photosensitive film Removing a gate electrode, a gate insulating film, a semiconductor layer, and a highly concentrated semiconductor layer on the pattern and the first photoresist pattern, forming a conductive layer on the entire surface of the structure, and a channel region of the semiconductor layer on the conductive layer. Forming a second photoresist pattern so as to expose the photoresist, and sequentially removing the second conductive layer and the high concentration semiconductor layer exposed by the second photoresist pattern. A method of manufacturing a thin film transistor of a liquid crystal display device, comprising forming a source and a drain electrode and then removing the second photoresist pattern. The method of claim 8, wherein the insulating layer etching process is performed by an etching method selected from the group consisting of a dry or wet etching method. The thin film transistor manufacturing method of claim 8, further comprising: anodizing a portion of the first conductive layer after the first conductive layer forming step to form an anodized film. The thin film transistor manufacturing method of a liquid crystal display device according to claim 8, wherein the step of removing the gate electrode, the gate insulating film, the semiconductor layer, and the highly concentrated semiconductor layer on the first photoresist pattern and the first photoresist pattern is performed by a normal lift-off process. ※ Note: The disclosure is based on the initial application.