KR930015031A - CCD image sensor with frame transfer method - Google Patents

CCD image sensor with frame transfer method Download PDF

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Publication number
KR930015031A
KR930015031A KR1019910023853A KR910023853A KR930015031A KR 930015031 A KR930015031 A KR 930015031A KR 1019910023853 A KR1019910023853 A KR 1019910023853A KR 910023853 A KR910023853 A KR 910023853A KR 930015031 A KR930015031 A KR 930015031A
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South Korea
Prior art keywords
image sensor
ccd image
frame transfer
type
substrate
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KR1019910023853A
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Korean (ko)
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KR950002194B1 (en
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이서규
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문정환
금성일렉트론 주식회사
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Priority to KR1019910023853A priority Critical patent/KR950002194B1/en
Publication of KR930015031A publication Critical patent/KR930015031A/en
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Publication of KR950002194B1 publication Critical patent/KR950002194B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

광검출영역 상측에 형성되던 기존의 폴리시리콘 게이트대신 웨이퍼 표면에 제1도전형의 접합 게이트를 형성하였다.A junction gate of the first conductivity type was formed on the wafer surface instead of the conventional polysilicon gate formed above the photodetection area.

이 제1도전형 접합게이트 하측에는 동일 도전형의 채널영역을 형성하고, 접합게이트와 채널영역사이에는 제2도전형의 배리어층을 형성하고, 채널영역의 하측에는 제2도전형의 저농도 기판과 고농도 기판을 차례로 형성하였다. 따라서 프레임 트랜스퍼 방식의 CCD 영상센서의 구조가 개선되므로, 신호 응답 및 광전변환 효율이 증대됨은 물론 클럭신호에 의해 OFD 조절 및 셔터 특성까지도 쉽게 얻을 수 있게된다.A channel region of the same conductivity type is formed under the first conductive junction gate, a barrier layer of the second conductivity type is formed between the junction gate and the channel region, and a low concentration substrate of the second conductivity type is formed below the channel region. High concentration substrates were formed one after the other. Accordingly, the structure of the CCD image sensor of the frame transfer method is improved, so that the signal response and the photoelectric conversion efficiency can be increased, and the OFD adjustment and the shutter characteristic can be easily obtained by the clock signal.

Description

프레임 트랜스퍼 방식의 CCD 영상센서CCD image sensor with frame transfer method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명에 따른 프레임 트랜스퍼 방식의 CCD 영상센서의 레이아웃도, 제4도는 본 발명에 따른 프레임 트랜스퍼 방식의 CCD 영상센서의 구조 단면도,3 is a layout diagram of a frame transfer type CCD image sensor according to the present invention, and FIG. 4 is a cross-sectional view of a structure of a frame transfer type CCD image sensor according to the present invention;

제5도는 본 발명에 따른 클럭신호의 타이밍도.5 is a timing diagram of a clock signal according to the present invention.

Claims (6)

제1도전형의 제1기판, 기판위에 형성되는 제2도전형의 채널영역, 채널영역위에 형성된 제1도전형의 배리어 영역, 배리어 영역의 표면에 일정 간격을 두고 형성된는 제2도전형의 접합전극, 접합전극의 위에 형성된 절연층, 각 클럭신호의 인가를 위해 상기 절연층을 통해 각 접합전극에 연결되는 접합전극 콘택으로 이루어짐을 특징으로 하는 프레임 트랜스퍼 방식의 CCD 영상 센서.A first electrode of the first conductive type, a channel region of the second conductive type formed on the substrate, a barrier region of the first conductive type formed on the channel region, and a junction electrode of the second conductive type formed at regular intervals on the surface of the barrier region. And an insulating layer formed on the junction electrode, and a junction electrode contact connected to each junction electrode through the insulation layer for application of each clock signal. 제1항에 있어서, 기판과 채널영역 사이에는 상기 제1기판과 동일한 도전형이고 제1기판보다 저농도인 제2기판이 추가로 구비됨을 특징으로 하는 프레임 트랜스퍼 방식의 CCD 영상 센서.The frame transfer type CCD image sensor of claim 1, further comprising a second substrate having the same conductivity type as that of the first substrate and having a lower concentration than that of the first substrate. 제1항에 있어서, 일정간격을 두고 형성되는 접합전극 사이에는 서로 다른 전위에 의한 전류의 급격한 흐름을 방지하기 위한 채널스톱 영역이 형성됨을 특징으로 하는 프레임 트랜스퍼 방식의 CCD 영상 센서.The frame transfer type CCD image sensor of claim 1, wherein a channel stop region is formed between the junction electrodes formed at a predetermined interval to prevent rapid flow of current by different potentials. 제1항에 있어서, 제1도전형은 p형이고 제2도전형은 n형인 것을 특징으로 하는 프레임 트랜스퍼 방식의 CCD 영상 센서.The frame transfer type CCD image sensor according to claim 1, wherein the first conductivity type is p type and the second conductivity type is n type. 제1항에 있어서, 채널영역의 농도는 접합전극의 농도보다 낮은 것임을 특징으로 하는 프레임 트랜스퍼 방식의 CCD 영상 센서.The frame transfer type CCD image sensor according to claim 1, wherein the concentration of the channel region is lower than that of the junction electrode. 제1항에 있어서, 제1도전형 물질의 농도크기는 제1기판〉배리어영역〉제2기판순임을 특징으로 하는 프레임 트랜스퍼 방식의 CCD 영상 센서.The frame transfer type CCD image sensor according to claim 1, wherein the concentration of the first conductive material is in the order of first substrate> barrier area> second substrate. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910023853A 1991-12-23 1991-12-23 Frame transfer style ccd image sensor KR950002194B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910023853A KR950002194B1 (en) 1991-12-23 1991-12-23 Frame transfer style ccd image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910023853A KR950002194B1 (en) 1991-12-23 1991-12-23 Frame transfer style ccd image sensor

Publications (2)

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KR930015031A true KR930015031A (en) 1993-07-23
KR950002194B1 KR950002194B1 (en) 1995-03-14

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100224444B1 (en) * 1996-12-12 1999-10-15 윤종용 Microwave oven

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7884871B2 (en) 2007-06-15 2011-02-08 Aptina Imaging Corporation Images with high speed digital frame transfer and frame processing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100224444B1 (en) * 1996-12-12 1999-10-15 윤종용 Microwave oven

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