KR930011170B1 - Method and circuit for measuring temperature - Google Patents

Method and circuit for measuring temperature Download PDF

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KR930011170B1
KR930011170B1 KR1019910003348A KR910003348A KR930011170B1 KR 930011170 B1 KR930011170 B1 KR 930011170B1 KR 1019910003348 A KR1019910003348 A KR 1019910003348A KR 910003348 A KR910003348 A KR 910003348A KR 930011170 B1 KR930011170 B1 KR 930011170B1
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temperature
transistor
voltage
circuit
measuring
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KR1019910003348A
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Korean (ko)
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KR920016825A (en
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송승우
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금성계전 주식회사
백중영
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K15/00—Testing or calibrating of thermometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
    • G01K1/20—Compensating for effects of temperature changes other than those to be measured, e.g. changes in ambient temperature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
    • G01K7/10—Arrangements for compensating for auxiliary variables, e.g. length of lead
    • G01K7/12—Arrangements with respect to the cold junction, e.g. preventing influence of temperature of surrounding air

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

The method compensates error of measured temperature by measuring temperature after seeking error compensating constant of transistor by comparing the value which is measured, amplified, and calculated from electromotive force (Vi) with the measured value of actual temperature. The circuit having an amplifing sect. (1) for amplifing voltage generated by transistor (Q1) includes a resistor (R2), its one end serially connecting with reference voltage (Vs) and its other end connecting with base and collector of transistor (Q1) serially.

Description

온도 측정방법 및 회로Temperature measuring method and circuit

제1도는 종래의 온도측정 회로도.1 is a conventional temperature measurement circuit diagram.

제2도는 본 발명에 따른 온도측정 회로도.2 is a temperature measurement circuit diagram according to the present invention.

제3도는 본 발명에 따른 트랜지스터의 온도대전압 특성그래프.3 is a graph of temperature versus voltage characteristics of a transistor according to the present invention.

제4도는 본 발명에 따른 온도측정회로를 적용한 온도측정계의 일예.4 is an example of a temperature measuring system to which the temperature measuring circuit according to the present invention is applied.

제5도는 제4도에 따른 동작플로우 챠트도.5 is an operational flow chart according to FIG.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 증폭부 A : 온도측정대상체1: Amplifier A: Temperature Measurement Object

Q1 : 트랜지스터 R1, R2 : 저항Q1: transistor R1, R2: resistor

VR2 : 가변저항 IC1 : OP앰프VR2: Variable resistance IC1: OP amplifier

IC2 : A/D변환기 IC3 : CPUIC2: A / D converter IC3: CPU

본 발명은 트랜지스터를 이용한 온도측정에 관한 것으로 특히 트랜지스터의 특성에 따른 온도오차 발생시 그 오차를 보정하여 정확하게 온도를 측정할 수 있게 하고 또한 간단하게 회로를 구성하므로서 저가격으로도 온도를 측정할 수 있도록 하는데 적당하도록한 온도측정방법 및 회로에 관한 것이다.The present invention relates to temperature measurement using a transistor, and in particular, when a temperature error occurs according to the characteristics of a transistor, the error can be accurately measured by correcting the error, and a simple circuit can be configured to measure temperature even at low cost. The present invention relates to a temperature measuring method and a circuit suitably.

종래의 트랜지스터를 이용하여 온도를 측정하는 회로는 제1도에서와 같이 공급전원(Vs)은 정전류공급장치(I)를 통해 증폭부(1) OP램프(IC1)의 ＂+＂입력단과 연결되는 동시에 가변저항(VR1)을 통해 에미터가 접지된 트랜지스터(Q1)의 콜렉터 및 베이스에 공통연결되고 OP앰프(IC1)의 ＂-＂입력단은 저항(R1)을 통해서는 접지되고 가변저항(VR2)을 통해서는 출력단(VO)과 연결되는 구성이다.In the circuit for measuring temperature using a conventional transistor, as shown in FIG. 1, the supply power supply Vs is connected to the ＂+＂ input terminal of the amplifier 1 OP lamp IC1 through the constant current supply device I. At the same time, the emitter is connected to the collector and base of the transistor Q1 having the emitter grounded through the variable resistor VR1, and the ＂-＂ input terminal of the OP amplifier IC1 is grounded through the resistor R1 and the variable resistor VR2 is connected. Through is connected to the output terminal (VO).

상기 구성회로의 동작상태를 설명하면, 기준전원(Vs)에 의해 생기는 정전류원(정전류공급장치(I)를 통해)에 의해 트랜지스터(Q1)에 정전류가 흐르는데 이때 가변저항(VR1)에 의해 트랜지스터(Q1)의 베이스-에미터간의 전압(VBE)이 온도에 따라 변화하게 되고 이때 온도에 따라 트랜지스터(Q1)에 의해 생기는 전압(Vi)은 OP앰프(IC1)의 ＂+＂입력으로 인가된다.Referring to the operating state of the configuration circuit, a constant current flows through the transistor Q1 by a constant current source (via the constant current supply device I) generated by the reference power supply Vs. The voltage V BE between the base-emitter of Q1) changes with temperature, and at this time, the voltage Vi generated by the transistor Q1 is applied to the ＂+＂ input of the OP amplifier IC1.

여기서 가변저항(VR2)은 OP앰프(IC1)의 전압증폭을 조정하는 가변저항인데 가변저항(VR2)에 의해 OP앰프(IC1)의 ＂+＂입력단에 인가된 전압은 다음과 같은 수식으로 증폭된다.Here, the variable resistor VR2 is a variable resistor that adjusts the voltage amplification of the OP amplifier IC1. The voltage applied to the ＂+ 단 input terminals of the OP amplifier IC1 by the variable resistor VR2 is amplified by the following equation. .

Figure kpo00001
Figure kpo00001

그런데 상기와 같은 종래의 온도측정회로에서 트랜지스터(Q1)의 온도에 따른 변화전압(Vi)은 트랜지스터의 불순물 농도나 접합면의 크기베이스의 두께등에 의해 값이 다르므로 트랜지스터의 품종차이에서는 물론 동일한 품종의 동일한 제조 로트내에서도 변하는 양상이 다를 수 있으므로 각 트랜지스터마다 온도에 따른 전압변화의 특성이 다를 수 밖에 없는 단점이 있었다.However, in the conventional temperature measuring circuit as described above, the change voltage Vi according to the temperature of the transistor Q1 is different depending on the impurity concentration of the transistor or the thickness of the base of the junction surface. In the same manufacturing lot, the changing pattern may vary, so each transistor has a disadvantage in that the characteristics of the voltage change are different.

따라서 본 발명은 트랜지스터의 온도에 따른 전압변화 특성이 서로 다른 것을 보정하여 온도 측정시의 오차를 해소한 온도측정방법 및 회로를 제공하는 것을 목적으로 한다.Accordingly, an object of the present invention is to provide a temperature measuring method and a circuit which solves errors in temperature measurement by correcting different voltage change characteristics according to temperature of a transistor.

이하 첨부도면을 참조하여 본 발명에 따른 온도측정회로의 구성 및 동작상태를 살펴보면 다음과 같다.Referring to the accompanying drawings, the configuration and operation of the temperature measuring circuit according to the present invention are as follows.

먼저 제2도에서 그 구성을 보면, 기준전압(Vs)은 저항(R2)을 통해 증폭부(1) OP앰프(IC1)의 ＂+＂단으로 인가되는 동시에 에미터가 접지된 트랜지스터(Q1)의 베이스단과 콜렉터에 공통인가되고 OP앰프(IC1)의 ＂-＂단은 저항(R1)을 통해서는 접지되고 가변저항(VR2)을 통해서는 출력단과 연결되는 구성이다.First, as shown in FIG. 2, the reference voltage Vs is applied to the ＂+＂ stage of the amplifier 1 of the amplifier 1 through the resistor R2 and the emitter is grounded. It is common to the base terminal and the collector, and the ＂-＂ terminal of the OP amplifier IC1 is grounded through the resistor R1 and connected to the output terminal through the variable resistor VR2.

상기 구성회로에서 트랜지스터의 전압특성은The voltage characteristic of the transistor in the configuration circuit

Figure kpo00002
Figure kpo00002

의 식에 의해 구해지고 이때 트랜지스터의 온도변화에 따른 전압변화의 특성그래프는 제3도와 같다.The characteristic graph of the voltage change according to the temperature change of the transistor at this time is shown in FIG.

제3도의 그래프에 의하여 Vi(온도에 따라 트랜지스터에 의해 생기는 전압)의 전압이 570mv이면 25℃가 온도측정부위의 온도이다.According to the graph of FIG. 3, if the voltage of Vi (voltage generated by the transistor according to temperature) is 570mv, 25 ° C is the temperature of the temperature measuring part.

즉 보정될 상수(c)는 0이다. 그러나 트랜지스터에 따라 같은 온도일지라도 전압 Vi가 달라진다. 이때 그러한 오차를 보정해야 하는데 상기의〈1〉식의 상수 b에 오차를 가감하기만 하면 보정된다.That is, the constant c to be corrected is zero. However, depending on the transistor, even at the same temperature, the voltage Vi varies. At this time, such an error should be corrected, but it is corrected by simply adding or subtracting the error to the constant b of the above formula (1).

즉 상수 c를 구한다.That is, the constant c is obtained.

예를들어 Vi 전압이 570mv이면 상기의〈1〉식에 의하여For example, if the Vi voltage is 570mv,

Figure kpo00003
Figure kpo00003

그런데 측정부위의 온도가 26℃이라면 C=26℃=25℃에서 C=1℃가 된다.By the way, if the temperature of the measurement site is 26 ℃ C = 26 ℃ = 25 ℃ C = 1 ℃.

이를 상기의〈1〉식에 대입하면 기준식이 구해진다. 이때 OP앰프(IC1)와 저항(R1) 가변저항(VR2)을 이용하여 전압(Vi)을 원하는 만큼 증폭하여 측정할 수 있는데 이때의 수식은 아래의 식〈2〉와 같다.Substituting this in the above formula (1) yields a reference equation. At this time, by using the OP amplifier (IC1) and the resistor (R1) variable resistor (VR2) it can be measured by amplifying the voltage (Vi) as desired.

Figure kpo00004
Figure kpo00004

제4도는 본 발명회로를 이용한 온도측정계의 일예로써 온도측정대상체(A)의 온도는 트랜지스터에 의해서 그에 상응하는 기전력을 만들어내고 이 전압은 OP앰프(IC1)의 ＂+＂단으로 입력된다.4 is an example of a temperature measuring system using the circuit of the present invention, the temperature of the temperature measuring object A generates an electromotive force corresponding thereto by a transistor, and this voltage is input to the ＂+＂ stage of the OP amplifier IC1.

OP앰프(IC1)은 이 전압을 10배 증폭하여 A/D변환기(IC2)로 전달하고 A/D변환기는 이 전압을 적절한 디지탈신호로 바꾸어 CPU(IC3)에 전달하면 CPU(IC3)에서는 상기의〈1〉식에 의해서 구하는 온도를 계산한다.The OP amplifier IC1 amplifies this voltage 10 times and transfers it to the A / D converter IC2. The A / D converter converts this voltage into an appropriate digital signal and transfers the voltage to the CPU IC3. The temperature calculated by <1> is calculated.

이를 제5도의 플로우 챠트를 참조하여 상세히 설명하면, 먼저

Figure kpo00005
의 식을 이용하여 원하는 배율의 저항값(R1,R2)을 결정하고 측정부위의 온도에 의해 생성된 기전력(Vi)을 증폭부(1)를 통해 증폭한 후 A/D변환기(IC2)를 통해 CPU(IC3)로 인가한다.If this is described in detail with reference to the flowchart of FIG.
Figure kpo00005
The resistance value (R1, R2) of the desired magnification is determined by using the equation, and the amplification of the electromotive force (Vi) generated by the temperature of the measurement site through the amplification unit (1), and then through the A / D converter (IC2) Apply to CPU (IC3).

CPU(IC3)는 인가된 신호를 처리한후 Y=2X+(b+c)의 식에 대입하여 온도를 구하는데 이때 보정될 상수 c를 구했으면 상수 c를 Y=2X+(b+c)의 식에 대입하여 실제온도(Y)를 구한후 계속온도를 측정할 것인가를 체크하고 상수 c를 구하지 못했으면 측정부위의 온도를 온도계를 이용하여 읽어들인 다음(이때의 온도는 Y임) 온도(Y)와 온도(Y')를 사용하여 상수 c를 구한후 상수 c를 Y=aX+(b+c)의 식에 대입하여 실제온도(Y)를 구한다.The CPU (IC3) processes the applied signal and finds the temperature by substituting Y = 2X + (b + c). If the constant c to be corrected is obtained, the constant c is expressed as Y = 2X + (b + c). After checking the actual temperature (Y) and checking the continuous temperature, if the constant c is not found, read the temperature of the measurement part using a thermometer (the temperature is Y) and then the temperature (Y) The constant c is obtained by using and temperature (Y '), and the actual value (Y) is obtained by substituting the constant c into the equation of Y = aX + (b + c).

그다음 계속온도를 측정할 것인지 체크하여 계속온도를 체크하고자하면 측정부위의 온도에 의해 생성된 기전력을 CPU(IC3)가 처리하는 과정으로 되돌아가 그 이후의 과정을 반복하게 된다.Then, it is checked whether or not to measure the continuous temperature, and if you want to check the continuous temperature, the process returns to the process in which the electromotive force generated by the temperature of the measuring part is processed by the CPU IC3, and the subsequent process is repeated.

따라서 본 발명은 트랜지스터에 따라 서로다른 온도대전압 특성으로 인하여 생기는 오차를 보정해주어 비교적 정확한 온도를 측정할 수 있고 회로가 간단하여 저가격으로 구현할 수 있는 효과가 있다.Therefore, the present invention can compensate for errors caused by different temperature-to-voltage characteristics according to transistors so that a relatively accurate temperature can be measured and the circuit can be easily implemented at low cost.

Claims (2)

트랜지스터를 이용하여 측정하는 방법에 있어서, 측정부위{제4(A)도에 도시}의 온도에 의해 생성된 기전력(Vi)을 증폭측정하여 계산된 값과, 실제온도의 측정값을 비교하여 트랜지스터의 오차보정상수를 구한후 온도를 측정함으로서 측정온도의 오차를 보정하도록하는 것을 특징으로 하는 온도측정방법.In the measuring method using a transistor, a transistor is obtained by comparing the calculated value of the actual temperature with the value calculated by amplifying and measuring the electromotive force (Vi) generated by the temperature of the measurement site (shown in FIG. 4A). Obtaining the error correction constant of the temperature measuring method characterized in that to correct the error of the measured temperature by measuring the temperature. 온도 측정대상체에 설치되는 트랜지스터(Q1)와 상기 트랜지스터(Q1)에 의해 발생된 전압을 입력받아 증폭하는 증폭부(1)를 포함하는 온도측정회로에 있어서, 기준전압(Vs)을 저항(R2)과 직렬연결하고 저항(R2)의 다른측단을 상기 트랜지스터(Q1)의 베이스와 콜렉터에 직렬연결하여 구성하는 것을 특징으로 하는 온도측정회로.In a temperature measuring circuit including a transistor (Q1) provided on a temperature measuring object and an amplifier (1) for receiving and amplifying a voltage generated by the transistor (Q1), the reference voltage (Vs) is a resistance (R2) And the other end of the resistor (R2) in series with the base and the collector of the transistor (Q1) in series configuration.
KR1019910003348A 1991-02-28 1991-02-28 Method and circuit for measuring temperature KR930011170B1 (en)

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