KR930008188A - Transparent conductive film production method and deposition apparatus using active reaction deposition method - Google Patents
Transparent conductive film production method and deposition apparatus using active reaction deposition method Download PDFInfo
- Publication number
- KR930008188A KR930008188A KR1019910018723A KR910018723A KR930008188A KR 930008188 A KR930008188 A KR 930008188A KR 1019910018723 A KR1019910018723 A KR 1019910018723A KR 910018723 A KR910018723 A KR 910018723A KR 930008188 A KR930008188 A KR 930008188A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- conductive film
- transparent conductive
- vapor deposition
- active reaction
- Prior art date
Links
Abstract
본 발명은 활성반응 증착방법을 이용한 투명도전막의 제조방법 및 증착 장치에 관한 것으로, 특히 투명도전막의 제작범위를 대면적화하며 고투과도 및 저면저항을 해설하고자 하는 것으로, 증착기판의 전원주면에 대응하여 산소를 공급하면서 기판과 산소공급부 사이에 바이어스 전원을 걸어 기판주변에 형성된 전기장에 의해 산소가스가 플라스마로 되고 산소플라스마에서 산화인듐과 산화주석의 조성비가 그대로 이루어지면서 산화인듐과 산화주석의 입자가 기판에 끌려가서 기판에 투면도전막이 형성되도록 하는 것임.The present invention relates to a method for manufacturing a transparent conductive film and a deposition apparatus using an active reaction vapor deposition method, in particular to large-area manufacturing range of the transparent conductive film to explain the high transmittance and bottom resistance, corresponding to the power main surface of the deposition substrate While supplying oxygen, a bias power is applied between the substrate and the oxygen supply unit, and oxygen gas becomes plasma by the electric field formed around the substrate, and the composition ratio of indium oxide and tin oxide in the oxygen plasma is intact. It is attracted to the substrate to form a transparent conductive film on the substrate.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제3도는 본 발명에 따른 전자선 가열증착 장치의 사시도,3 is a perspective view of an electron beam evaporation apparatus according to the present invention,
제4도는 본 발명에 따른 전자선 가열증착 장치의 산소공급 라인 겸 바이어스 부의 상세도.Figure 4 is a detailed view of the oxygen supply line and the bias portion of the electron beam heating deposition apparatus according to the present invention.
제5도는 본 발명에 따른 전자선 가열증착 장치 사용상태도.5 is a state of use of the electron beam evaporation apparatus according to the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910018723A KR930008188A (en) | 1991-10-24 | 1991-10-24 | Transparent conductive film production method and deposition apparatus using active reaction deposition method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910018723A KR930008188A (en) | 1991-10-24 | 1991-10-24 | Transparent conductive film production method and deposition apparatus using active reaction deposition method |
Publications (1)
Publication Number | Publication Date |
---|---|
KR930008188A true KR930008188A (en) | 1993-05-21 |
Family
ID=67348282
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910018723A KR930008188A (en) | 1991-10-24 | 1991-10-24 | Transparent conductive film production method and deposition apparatus using active reaction deposition method |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR930008188A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6565779B1 (en) | 1998-03-31 | 2003-05-20 | Union Carbide Chemicals & Plastics Technology Corporation | Cable semiconducting shield compositions |
KR100766153B1 (en) * | 1999-12-30 | 2007-10-10 | 젠백 에어로스페이스 코포레이션 | Electron beam evaporation of transparent indium tin oxide |
-
1991
- 1991-10-24 KR KR1019910018723A patent/KR930008188A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6565779B1 (en) | 1998-03-31 | 2003-05-20 | Union Carbide Chemicals & Plastics Technology Corporation | Cable semiconducting shield compositions |
KR100766153B1 (en) * | 1999-12-30 | 2007-10-10 | 젠백 에어로스페이스 코포레이션 | Electron beam evaporation of transparent indium tin oxide |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4514437A (en) | Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition | |
US4511756A (en) | Amorphous silicon solar cells and a method of producing the same | |
US6153271A (en) | Electron beam evaporation of transparent indium tin oxide | |
US8163404B2 (en) | Chlorine, fluorine and lithium co-doped transparent conductive films and methods for fabricating the same | |
JPS59117178A (en) | Method and device for depositing highly conductive and transmissive thin film | |
KR930008188A (en) | Transparent conductive film production method and deposition apparatus using active reaction deposition method | |
Ridge et al. | Composition control in conducting oxide thin films | |
US5501745A (en) | Low temperature method for making a photovoltaic material | |
JP3345638B2 (en) | Transparent conductive film and method for producing the same | |
US6798023B1 (en) | Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film | |
CA2461274A1 (en) | Photoelectric current multiplier using molecular crystal and production method therefor | |
KR20030059708A (en) | Apparatus and method for supplying cesium | |
JP3095232B2 (en) | Method for producing transparent conductive film | |
JPS5843899B2 (en) | Method for forming transparent conductive film | |
JPS61183813A (en) | Formation of conductive film | |
JPH04219301A (en) | Production of oxide superconductor thin film | |
KR930005825B1 (en) | Process for producing a transparent polymer film having a electrical conductivity | |
JPS59205474A (en) | Vapor deposition method | |
JPH0815712A (en) | Production of transparent conductive thin film | |
KR840008534A (en) | Continuous attaching method of high conductivity, high permeability film and apparatus thereof | |
Nakazawa et al. | Transparent and conductive cadmium-tin oxide films deposited by atom beam sputtering | |
JPH09209128A (en) | Ion plating apparatus using laser for evaporating source | |
JPS6315346B2 (en) | ||
JPS6226869A (en) | Manufacture of photovoltaic device | |
JPS58161765A (en) | Vacuum deposition process |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Withdrawal due to no request for examination |