KR930008188A - Transparent conductive film production method and deposition apparatus using active reaction deposition method - Google Patents

Transparent conductive film production method and deposition apparatus using active reaction deposition method Download PDF

Info

Publication number
KR930008188A
KR930008188A KR1019910018723A KR910018723A KR930008188A KR 930008188 A KR930008188 A KR 930008188A KR 1019910018723 A KR1019910018723 A KR 1019910018723A KR 910018723 A KR910018723 A KR 910018723A KR 930008188 A KR930008188 A KR 930008188A
Authority
KR
South Korea
Prior art keywords
substrate
conductive film
transparent conductive
vapor deposition
active reaction
Prior art date
Application number
KR1019910018723A
Other languages
Korean (ko)
Inventor
김치영
Original Assignee
이헌조
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019910018723A priority Critical patent/KR930008188A/en
Publication of KR930008188A publication Critical patent/KR930008188A/en

Links

Abstract

본 발명은 활성반응 증착방법을 이용한 투명도전막의 제조방법 및 증착 장치에 관한 것으로, 특히 투명도전막의 제작범위를 대면적화하며 고투과도 및 저면저항을 해설하고자 하는 것으로, 증착기판의 전원주면에 대응하여 산소를 공급하면서 기판과 산소공급부 사이에 바이어스 전원을 걸어 기판주변에 형성된 전기장에 의해 산소가스가 플라스마로 되고 산소플라스마에서 산화인듐과 산화주석의 조성비가 그대로 이루어지면서 산화인듐과 산화주석의 입자가 기판에 끌려가서 기판에 투면도전막이 형성되도록 하는 것임.The present invention relates to a method for manufacturing a transparent conductive film and a deposition apparatus using an active reaction vapor deposition method, in particular to large-area manufacturing range of the transparent conductive film to explain the high transmittance and bottom resistance, corresponding to the power main surface of the deposition substrate While supplying oxygen, a bias power is applied between the substrate and the oxygen supply unit, and oxygen gas becomes plasma by the electric field formed around the substrate, and the composition ratio of indium oxide and tin oxide in the oxygen plasma is intact. It is attracted to the substrate to form a transparent conductive film on the substrate.

Description

활성반응 증착방법을 이용한 투명 도전막 제조방법 및 증착장치Transparent conductive film production method and deposition apparatus using active reaction deposition method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명에 따른 전자선 가열증착 장치의 사시도,3 is a perspective view of an electron beam evaporation apparatus according to the present invention,

제4도는 본 발명에 따른 전자선 가열증착 장치의 산소공급 라인 겸 바이어스 부의 상세도.Figure 4 is a detailed view of the oxygen supply line and the bias portion of the electron beam heating deposition apparatus according to the present invention.

제5도는 본 발명에 따른 전자선 가열증착 장치 사용상태도.5 is a state of use of the electron beam evaporation apparatus according to the present invention.

Claims (3)

산화주석과 산화인륨이 혼합된 펠릿과 기판을 구비하여 상기 기판에 바이어스 전원은 인가하여 가열하는 가열단계와, 상기 가열단계에 의해 기판상에 형성된 산화주석, 산화인륨막을 후처리하는 단계로 진행되는 것을 특징으로 하는 활성반응 증착방법을 이용한 투명도전막 제조방법.And a pellet and a substrate in which tin oxide and indium oxide are mixed, and a heating step of applying and heating a bias power to the substrate and post-treating the tin oxide and indium oxide films formed on the substrate by the heating step. Transparent conductive film production method using an active reaction deposition method characterized in that the progress. 제1항에 있어서, 상기 산화인듐과 산화주석 펠릿은 조정비가 92 : 8인 것을 특징으로 하는 활성반응 증착방법을 이용한 투명도전막 제조방법.The method of claim 1, wherein the indium oxide and tin oxide pellets have an adjustment ratio of 92: 8. 기틀상부에 증착기면을 모터에 의해 회동하도록 하고 증착기면을 가열하는 기판 가열장치를 장착하며 기틀 하부에 전자선 가열장치 및 전자빔을 장착하고, 산소공급라인(6)은 증착기면(2)의 전원주면에 대응하여 형성함으로서 산소를 공급할 수 있도록 하고 함께 바이어스부(7B)가 적게하고, 증착기면(2)에 바이어스 전원을 공급하는 바이어스부(7A)를 접속하고, 상기 바이어스(7A, 7B)에 전원을 공급하도록 바이어스 전원부(7C)를 접속하여 되는 자기장 발생장치(7)를 구성하여 되는 것을 특징으로 하는 활성반응 증착방법을 이용한 투명도전막의 증착장치.Mount the substrate heater to rotate the vapor deposition base surface by the motor on the base and heat the vapor deposition base, and mount the electron beam heating device and the electron beam at the bottom of the base, and the oxygen supply line 6 is the power main surface of the vapor deposition base surface 2. And the bias portion 7A for supplying oxygen and connecting the bias portion 7A for supplying a bias power supply to the vapor deposition substrate 2, and supplying power to the biases 7A and 7B. A device for depositing a transparent conductive film using an active reaction deposition method, characterized in that a magnetic field generating device (7) is formed by connecting a bias power supply (7C) to supply a. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910018723A 1991-10-24 1991-10-24 Transparent conductive film production method and deposition apparatus using active reaction deposition method KR930008188A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910018723A KR930008188A (en) 1991-10-24 1991-10-24 Transparent conductive film production method and deposition apparatus using active reaction deposition method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910018723A KR930008188A (en) 1991-10-24 1991-10-24 Transparent conductive film production method and deposition apparatus using active reaction deposition method

Publications (1)

Publication Number Publication Date
KR930008188A true KR930008188A (en) 1993-05-21

Family

ID=67348282

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910018723A KR930008188A (en) 1991-10-24 1991-10-24 Transparent conductive film production method and deposition apparatus using active reaction deposition method

Country Status (1)

Country Link
KR (1) KR930008188A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6565779B1 (en) 1998-03-31 2003-05-20 Union Carbide Chemicals & Plastics Technology Corporation Cable semiconducting shield compositions
KR100766153B1 (en) * 1999-12-30 2007-10-10 젠백 에어로스페이스 코포레이션 Electron beam evaporation of transparent indium tin oxide

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6565779B1 (en) 1998-03-31 2003-05-20 Union Carbide Chemicals & Plastics Technology Corporation Cable semiconducting shield compositions
KR100766153B1 (en) * 1999-12-30 2007-10-10 젠백 에어로스페이스 코포레이션 Electron beam evaporation of transparent indium tin oxide

Similar Documents

Publication Publication Date Title
US4514437A (en) Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition
US4511756A (en) Amorphous silicon solar cells and a method of producing the same
US6153271A (en) Electron beam evaporation of transparent indium tin oxide
US8163404B2 (en) Chlorine, fluorine and lithium co-doped transparent conductive films and methods for fabricating the same
JPS59117178A (en) Method and device for depositing highly conductive and transmissive thin film
KR930008188A (en) Transparent conductive film production method and deposition apparatus using active reaction deposition method
Ridge et al. Composition control in conducting oxide thin films
US5501745A (en) Low temperature method for making a photovoltaic material
JP3345638B2 (en) Transparent conductive film and method for producing the same
US6798023B1 (en) Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film
CA2461274A1 (en) Photoelectric current multiplier using molecular crystal and production method therefor
KR20030059708A (en) Apparatus and method for supplying cesium
JP3095232B2 (en) Method for producing transparent conductive film
JPS5843899B2 (en) Method for forming transparent conductive film
JPS61183813A (en) Formation of conductive film
JPH04219301A (en) Production of oxide superconductor thin film
KR930005825B1 (en) Process for producing a transparent polymer film having a electrical conductivity
JPS59205474A (en) Vapor deposition method
JPH0815712A (en) Production of transparent conductive thin film
KR840008534A (en) Continuous attaching method of high conductivity, high permeability film and apparatus thereof
Nakazawa et al. Transparent and conductive cadmium-tin oxide films deposited by atom beam sputtering
JPH09209128A (en) Ion plating apparatus using laser for evaporating source
JPS6315346B2 (en)
JPS6226869A (en) Manufacture of photovoltaic device
JPS58161765A (en) Vacuum deposition process

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination