KR930004774A - Method for manufacturing side emitting EL thin film element - Google Patents

Method for manufacturing side emitting EL thin film element Download PDF

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Publication number
KR930004774A
KR930004774A KR1019910014263A KR910014263A KR930004774A KR 930004774 A KR930004774 A KR 930004774A KR 1019910014263 A KR1019910014263 A KR 1019910014263A KR 910014263 A KR910014263 A KR 910014263A KR 930004774 A KR930004774 A KR 930004774A
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KR
South Korea
Prior art keywords
light emitting
film
thin film
electron beam
beam deposition
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KR1019910014263A
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Korean (ko)
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KR940003302B1 (en
Inventor
최재용
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김광호
삼성전자 주식회사
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Priority to KR1019910014263A priority Critical patent/KR940003302B1/en
Publication of KR930004774A publication Critical patent/KR930004774A/en
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Publication of KR940003302B1 publication Critical patent/KR940003302B1/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

내용 없음.No content.

Description

측면발광 EL 박막 소자의 제조방법Method for manufacturing side emitting EL thin film element

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 측면발광 EL박막 소자의 구조도,1 is a structural diagram of a side-emitting EL thin film element,

제3도는 본 발명에 따른 실시예를 나타낸 표,3 is a table showing an embodiment according to the present invention,

제4도는 본 발명에 따른 절연막 특성표.4 is an insulating film characteristic table according to the present invention.

Claims (5)

하부 금속막, 하부 절연막, 발광막, 상부 절연막, 상부 금속막이 순차적으로 적층된 측면 발광 EL 박막소자의 제조방법에 있어서, 상기 하부 및 상부 금속막이 전자빔 증착에 의해 형성되고 상기 하부 및 상부 절연막이 산소 바느성 스파터링에 의해 형성되며, 상기 발광막이 다중 전자빔 증착에 의해 형성됨을 특징으로 하는 측면 발광 EL 박막 소자의 제조방법.In the method of manufacturing a side light emitting EL thin film element in which a lower metal film, a lower insulating film, a light emitting film, an upper insulating film, and an upper metal film are sequentially stacked, the lower and upper metal films are formed by electron beam deposition, and the lower and upper insulating films are oxygen. And a light emitting film formed by multiple electron beam deposition. 제1항에 있어서, 상기 발광막의 다중 전자빔 증착 공정이 단일 챔버내에 아연, 황 및 망간의 세개의 노를 설치하는 제1단계와, 상기 각각의 전자빔을 조절하기 위한 조정판을 설치한 제2단계와, 파워를 조절함에 의해 원하는 농도의 발광막을 소정 두께로 형성하는 제3단계와, 소정 온도에서 진공열 처리하는 제4단계로 이루어짐을 특징으로 하는 측면발광 EL 박막 소자의 제조방법.The method of claim 1, wherein the multiple electron beam deposition process of the light emitting film comprises: a first step of installing three furnaces of zinc, sulfur, and manganese in a single chamber; and a second step of installing an adjusting plate for adjusting the respective electron beams; And a third step of forming a light emitting film having a desired concentration to a predetermined thickness by adjusting power, and a fourth step of vacuum-heating at a predetermined temperature. 제2항에 있어서, 상기 발광막이 1wt% 이하의 망간농도를 가짐을 특징으로 하는 측면발광 EL 박막 소자의 제조방법.The method of manufacturing a side light emitting EL thin film element according to claim 2, wherein said light emitting film has a manganese concentration of 1 wt% or less. 제2항에 있어서, 상기 열처리 온도가 500℃-600℃임을 특징으로 하는 측면발광 EL 박막 소자의 제조방법.The method of claim 2, wherein the heat treatment temperature is 500 ° C-600 ° C. 제1항에 있어서, 상기 산소 반응성 스파터링이 탄탈륨 실리콘 산화물을 타겟으로 사용함을 특징으로 하는 측면발광 EL 박막 소자의 제조방법.The method of claim 1, wherein the oxygen reactive spattering uses tantalum silicon oxide as a target. ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.※ Note: This is to be disclosed by the original application.
KR1019910014263A 1991-08-19 1991-08-19 Manufacture method of el thin film device KR940003302B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910014263A KR940003302B1 (en) 1991-08-19 1991-08-19 Manufacture method of el thin film device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910014263A KR940003302B1 (en) 1991-08-19 1991-08-19 Manufacture method of el thin film device

Publications (2)

Publication Number Publication Date
KR930004774A true KR930004774A (en) 1993-03-23
KR940003302B1 KR940003302B1 (en) 1994-04-20

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KR1019910014263A KR940003302B1 (en) 1991-08-19 1991-08-19 Manufacture method of el thin film device

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100478738B1 (en) * 1999-05-27 2005-03-28 세이코 엡슨 가부시키가이샤 Monolithic semiconductor device and method of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100478738B1 (en) * 1999-05-27 2005-03-28 세이코 엡슨 가부시키가이샤 Monolithic semiconductor device and method of manufacturing the same

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Publication number Publication date
KR940003302B1 (en) 1994-04-20

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